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| ? reduced rfi and emi reduced snubbing extensive characterization of recovery parameters hermetic these ultrafast, soft recovery diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode fred v r = 200v i f(av) = 35a t rr = 35ns hfb35hb20c www.irf.com 1 parameter max. units v r cathode to anode voltage ( per leg ) 200 v i f(av) continuous forward current, t c =108 c 35 i fsm single pulse forward current, t c = 25c ( per leg ) 150 p d @ t c = 25c maximum power dissipation 90 w t j, t stg operating junction and storage temperature range -55 to +150 c case style to-254aa (isolated base) anode common anode cathode pd - 94326a 2 www.irf.com hfb35hb20c !" parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 200 ? ? v i r = 100a electrical characteristics ( per leg )@ t j = 25c (unless otherwise specified) l s series inductance ? 6.7 ? nh measured from anode lead to cathode lead , 6mm ( 0.025 in) from package c t junction capacitance, see fig. 3 ? ? 150 pf v r = 200v i r reverse leakage current ? ? 10 a v r = v r rated see fig. 2 ? ? 50 a v r = v r rated, t j = 125c # dynamic recovery characteristics ( per leg ) @ t j = 25c (unless otherwise specified) # parameter min. typ. max. units test conditions t rr reverse recovery time ? ? 35 ns i f = 1.0a,v r = 30v, di f /dt = 200a/s t rr1 reverse recovery time ? 28 ? ns t j = 25c see fig. t rr2 ? 46? t j = 125c 5 i f = 35a i rrm1 peak recovery current ? 4.0 ? t j = 25c see fig. i rrm2 ? 12.3 ? t j = 125c 6 v r = 160v q rr1 reverse recovery charge ? 66 ? t j = 25c see fig. q rr2 ? 190 ? t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ? 410 ? t j = 25c see fig. di (rec)m /dt2 during t b ? 1740 ? t j = 125c 8 thermal - mechanical characteristics parameter typ. max. units r thjc junction-to-case, single leg conducting ? 1.4 wt weight 9.3 ? g c/w v f forward voltage ? ? 1.3 i f = 17.5a, t j = -55c see fig. 1 ? ? 1.1 i f = 17.5a, t j = 25c ? ? 1.4 i f = 35a, t j = 25c ? ? 1.0 i f = 17.5a, t j = 125c v www.irf.com 3 hfb35hb20c fig. 4 - maximum thermal impedance z thjc characteristics ( per leg ) fig. 2 - typical reverse current vs. reverse voltage ( per leg ) fig. 3 - typical junction capacitance vs. reverse voltage ( per leg ) fig. 1 - maximum forward voltage drop vs. instantaneous forward current ( per leg ) 0 40 80 120 160 200 reverse voltage - v r (v) 0.0001 0.001 0.01 0.1 1 10 100 r e v e r s e c u r r e n t - i r ( a ) 125c 75c 25c 100c 0 40 80 120 160 200 reverse voltage - v r (v) 100 1000 j u n c t i o n c a p a c i t a n c e - c t ( p f ) t j = 25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 0.0 0.4 0.8 1.2 1.6 2.0 forward voltage drop - v f (v) 1 10 100 i n s t a n t a n e o u s f o r w a r d c u r r e n t - i f ( a ) tj = -55c tj = 125c tj = 25c 4 www.irf.com hfb35hb20c fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) fig. 5 - typical reverse recovery vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) 100 1000 di f / dt - ( a / s ) 20 30 40 50 60 t r r - ( n s ) v r = 160v t j = 125c t j = 25c i f = 17.5a i f = 70a i f = 35a 100 1000 di f / dt - ( a / s ) 1 10 100 i r r m - ( a ) v r = 160v t j = 125c t j = 25c i f = 17.5a i f = 70a i f = 35a 100 1000 di f / dt - ( a / s ) 10 100 1000 q r r - ( n c ) v r = 160v t j = 125c t j = 25c i f = 17.5a i f = 70a i f = 35a 100 1000 di f / dt - ( a / s ) 100 1000 10000 d i ( r e c ) m / d t - ( a / s ) v r = 160v t j = 125c t j = 25c i f = 17.5a i f = 70a i f = 35a www.irf.com 5 hfb35hb20c fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f ! " ## # $!# %% # %" ## & ' ## () (( * ' " reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust case outline and dimensions ? to-254aa 1 = anode 1 2 = common cathode 3 = anode 2 ! " 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] b ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/2006 |
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