250v p-channel mosfet general description these p-channel enhancement mode power field effect transistors are produced using kersemi proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switching dc/dc converters. features -2.0a, -250v, r ds(on) = 4.0 ? @v gs = -10 v low gate charge ( typical 6.5 nc) low crss ( typical 6.5 pf) fast switching 100% avalanche tested improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter KSMD2P25 / ksmu2p25 units v dss drain-source voltage -250 v i d drain current - continuous (t c = 25c) -2.0 a - continuous (t c = 100c) -1.27 a i dm drain current - pulsed (note 1) -8.0 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 120 mj i ar avalanche current (note 1) -2.0 a e ar repetitive avalanche energy (note 1) 3.7 mj dv/dt peak diode recovery dv/dt (note 3) -5.5 v/ns p d power dissipation (t a = 25c) * 2.5 w power dissipation (t c = 25c) 37 w - derate above 25c 0.29 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 3.4 c w r ja thermal resistance, junction-to-ambient * -- 50 c w r ja thermal resistance, junction-to-ambient -- 110 c w * when mounted on the minimum pad size recommended (pcb mount) ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! s d g to-252 to-251 KSMD2P25 / ksmu2p25 2014-7-16 1 www.kersemi.com
(note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 48mh, i as = -2.0a, v dd = -50v, r g = 25 ?, starting t j = 25c 3. i sd -2.3a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -250 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25c -- -0.2 -- v/c i dss zero gate voltage drain current v ds = -250 v, v gs = 0 v -- -- -1 a v ds = -200 v, t c = 125c -- -- -10 a i gssf gate-body leakage current, forward v gs = -30 v, v ds = 0 v -- -- -100 na i gssr gate-body leakage current, reverse v gs = 30 v, v ds = 0 v -- -- 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -3.0 -- -5.0 v r ds(on) static drain-source on-resistance v gs = -10 v, i d = -1.0 a -- 3.15 4.0 ? g fs forward transconductance v ds = -40 v, i d = -1.0 a -- 1.1 -- s dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz -- 190 250 pf c oss output capacitance -- 40 55 pf c rss reverse transfer capacitance -- 6.5 8.5 pf switching characteristics t d(on) turn-on delay time v dd = -125 v, i d = -2.3 a, r g = 25 ? -- 8.5 25 ns t r turn-on rise time -- 40 90 ns t d(off) turn-off delay time -- 12 35 ns t f turn-off fall time -- 25 60 ns q g total gate charge v ds = -200 v, i d = -2.3 a, v gs = -10 v -- 6.5 8.5 nc q gs gate-source charge -- 1.8 -- nc q gd gate-drain charge -- 3.0 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- -2.0 a i sm maximum pulsed drain-source diode forward current -- -- -8.0 a v sd drain-source diode forward voltage v gs = 0 v, i s = -2.0 a -- -- -5.0 v t rr reverse recovery time v gs = 0 v, i s = -2.3 a, di f / dt = 100 a/ s -- 110 -- ns q rr reverse recovery charge -- 0.4 -- c KSMD2P25 / ksmu2p25 2014-7-16 2 www.kersemi.com
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -1 10 0 25 150 notes : 1. v gs = 0v 2. 250 s pulse test -i dr , reverse drain current [a] -v sd , source-drain voltage [v] 246810 10 -1 10 0 notes : 1. v ds = -40v 2. 250 s pulse test -55 150 25 -i d , drain current [a] -v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -1 10 0 v gs top : -15.0 v -10.0 v -8.0 v -7.0 v -6.5 v -6.0 v bottom : -5.5 v notes : 1. 250 s pulse test 2. t c = 25 -i d , drain current [a] -v ds , drain-source voltage [v] 01234567 0 2 4 6 8 10 12 v ds = -125v v ds = -50v v ds = -200v note : i d = -2.3 a -v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 100 200 300 400 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] -v ds , drain-source voltage [v] 0.0 1.5 3.0 4.5 6.0 0 3 6 9 12 15 note : t j = 25 v gs = - 20v v gs = - 10v r ds(on) [ ? ], drain-source on-resistance -i d , drain current [a] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics KSMD2P25 / ksmu2p25 2014-7-16 3 www.kersemi.com
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 n o tes : 1 . z jc (t) = 3.4 /w m ax. 2 . d uty f acto r, d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al response t 1 , s q uare w ave p ulse d u ration [sec] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 -i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse -i d , drain current [a] -v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = -10 v 2. i d = -1.15 a r ds( on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = -250 a -bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2 KSMD2P25 / ksmu2p25 2014-7-16 4 www.kersemi.com
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l l i d i d t p KSMD2P25 / ksmu2p25 2014-7-16 5 www.kersemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g compliment of dut (n-channel) v gs dv/dt controlled by r g i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g compliment of dut (n-channel) v gs dv/dt controlled by r g i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- KSMD2P25 / ksmu2p25 2014-7-16 6 www.kersemi.com
package dimensions 6.60 dpak KSMD2P25 / ksmu2p25 KSMD2P25 / ksmu2p25 2014-7-16 7 www.kersemi.com
package dimensions (continued) 6.60 ipak KSMD2P25 / ksmu2p25 2014-7-16 8 www.kersemi.com
|
