m o s f e t rohs device features - p-channel -12v(d-s) power mosfet mechanical data - case: dfneb2*2-6l-j, molded plastic. circuit diagram CJM1206-G (p-channel ) d f n w b 2 * 2 - 6 l - j maximum ratings (at t a=25 c unless otherwise noted) drain-source voltage gate-source voltage drain current-continuous junction temperature range storage temperature range unit symbol parameter v ds v gs i d r ja t j t stg v alue -12 8 -6 357 -40 to +150 -55 to +150 v a c/w c c thermal resistance from junction to ambient v (br)dss r ds(on) max i d -12v 45m @ -4.5v 60m @ -2.5v -6a - advanced trench mosfet process technology d d d d g s 1 2 3 4 5 6 90m @ -1.8v drain current-pulsed i dm* -20 - ultra low on-resistance with low gate charge - 1. drain - 2. drain - 3. ga te - 4. source - 5. drain - 6. drain d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) 0.082(2.076) 0.076(1.924) 0.035(0.90) 0.028(0.70) 0.002(0.05) 0.000(0.00) 0.082(2.076) 0.076(1.924) 0.008(0.20) ref . 0.026(0.65)typ . 0.014(0.35) 0.010(0.25) 0.039(1.00) 0.031(0.80) 0.041(1.05) 0.033(0.85) 0.008(0.20) min. 0.013(0.326) 0.007(0.174) 0.026(0.66) 0.018(0.46) 0.008(0.40) 0.016(0.20) 4 5 6 3 2 1 s d c o m c h i p s m d d i o d e s p e c i a l i s t qw -btr46 comchip t echnology co., l td. page 1 rev :a company reserves the right to improve product design , functions and reliability without notice. * repetitive rating: pluse width limited by junction temperature power dissipation p d 2.5 w
symbol parameter conditions min max unit drain-source breakdown voltage 45 v gs = 0v , i d = -250a zero gate voltage drain current forward transconductance (note 1) reverse transfer capacitance (note 2,3) input capacitance (note 2,3) drain-source body diode characteristics t urn-on delay time (note2,3) t urn-of f delay time (note2,3) rise time (note2,3) fall time (note2,3) v ds = -8v , v gs = 0v v = -4.5v , gs i d = -3.5a v ds = -5v , i d = -4.1a v (br) dss i dss r ds(on) gfs c oss c rss td(on) tr td(of f) tf -12 -1 6 5 1 1 22 16 v m? s c iss 740 page 2 rev :a qw -btr46 comchip t echnology co., l td. m o s f e t dynamic characteristics v = -2.5v , gs i d = -3a 60 output capacitance (note 2,3) t yp 290 190 pf static characteristics electrical characteristics (at t a =25c unless otherwise noted) company reserves the right to improve product design , functions and reliability without notice. gate-source leakage current v ds = 0v , v gs = 8v i gss 100 na drain-source on-resistance (note 1) a v ds = v gs , i d = -250a -0.9 v -0.5 gate threshold voltage -source v gs(th) v ds = -4v , v gs = 0v f = 1mh z v = -1.8v , gs i d = -2.0a 90 30 40 60 9 qgs i d = -4.1a v = -4v , ds = -2.5a v gs t otal gate charge (note2) qg 15 nc gate-source charge (note2) 45 1.2 1.6 7.8 v ds = -4v , v gs = -4.5v , i d = -4.1a, qgd gate-resistance (note2,3) f = 1mhz rg 1.4 ? gate-drain charge (note2) 14 7 20 v gen = -4.5v , rg = 1? tr r l = 1.2? , i d -3.3a 53 t run-on delay time (note2,3) td(on) ns rise time (note2,3) 48 13 35 32 td(of f) fall time (note2,3) tf t run-of f delay time (note2,3) 20 10 v = -4v dd v gen = -8v , rg = 1? r l = 1.2? , i d -3.3a v = -4v dd continuous source-drain diode current body ciode voltage pulse diode forward current (note1) is is m v sd -6 -20 -1.2 a v i f = -3.3a note: 1.pulse test; pulse width 300s, duty cycle 2% 2. guaranteed by design, not subject to production testing. 3. these parameters have no way to verify . 10 17 33 24 c o m c h i p s m d d i o d e s p e c i a l i s t
ra ting and characteristic cur ves (CJM1206-G) m o s f e t d r a i n c u r r e n t , i d ( a ) gate to source v oltage, v gs (v ) o n - r e s i s t a n c e , r d s ( o n ) ( m ? ) gate to source v oltage, v gs (v ) fig.4 - r ds(on) v gs o n - r e s i s t a n c e , r d s ( o n ) ( m ? ) drain current, i d (a) fig.3 - r ds(on) i d source to drain v oltage, v sd (v ) - 0 . 2 - 1 0 - 1 fig.5 - i s v sd - 0 . 4 - 0 . 8 - 1 . 2 - 2 . 0 fig.2 - t ransfer characteristics d r a i n c u r r e n t , ( a ) i d drain to soruce v oltage, v ds (v) - 0 - 1 - 2 - 3 - 4 fig.1 - output characteristics - 0 . 1 - 0 - 2 - 6 - 4 - 0 - 2 - 1 2 - 4 s o u r c e c u r r e n t , i s ( a ) - 0 - 0 . 5 - 1 . 0 - 1 . 5 - 2 . 0 0 1 8 0 6 0 1 2 0 0 5 0 2 0 0 - 0 - 3 - 2 - 4 - 5 - 1 - 0 - 1 2 - 8 - 1 6 - 4 1 0 0 1 5 0 - 8 - 1 0 - 1 . 6 t a=25c pulsed i d = -3.3a t a=100c pulsed t a=25c pulsed t a=100c pulsed v ds = -3v v gs = -4.5v , -4v , -3.5v , -3v , -2.5v v gs = -2v v gs = -1.5v v gs = -1.8 v v gs = -2.5 v v gs = -4.5 v t a=25c pulsed t a=100c pulsed t a=25c pulsed i d = -250ua t h r e s h o l d v o l t a g e , v t h ( v ) ambient t emperature, t a (c ) fig.6 - threshold v oltage - 0 - 0 . 2 - 1 . 0 - 0 . 4 - 0 . 6 - 0 . 8 2 5 5 0 7 5 1 2 5 1 0 0 - 6 c o m c h i p s m d d i o d e s p e c i a l i s t qw -btr46 comchip t echnology co., l td. page 3 rev :a company reserves the right to improve product design , functions and reliability without notice.
qw -btr46 comchip t echnology co., l td. page 4 rev :a m o s f e t d f n w b 2 x 2 - 6 l - j c o m c h i p s m d d i o d e s p e c i a l i s t reel t aping specification company reserves the right to improve product design , functions and reliability without notice. a p f e w p 0 p 1 d t r a i l e r t a p e 1 0 0 e m p t y p o c k e t s l e a d e r t a p e 1 0 0 e m p t y p o c k e t s c o m p o n e n t s d 1 d 2 d w 1 d f n w b 2 x 2 - 6 l - j b c d d d 2 d 1 e f p p 0 p 1 s y m b o l a w w 1 ( m m ) ( i n c h ) 0 . 0 9 1 0 . 0 0 2 0 . 0 9 1 0 . 0 0 2 0 . 0 4 3 0 . 0 0 2 0 . 5 1 2 0 . 0 0 8 s y m b o l ( m m ) ( i n c h ) 0 . 0 6 9 0 . 0 0 4 0 . 1 3 8 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 2 . 3 0 0 . 0 5 2 . 3 0 0 . 0 5 4 . 0 0 0 . 1 0 3 . 5 0 0 . 1 0 1 . 7 5 0 . 1 0 1 3 . 0 0 0 . 2 0 1 . 1 0 0 . 0 5 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 1 . 5 0 0 . 1 0 6 0 . 0 0 0 . 5 0 2 . 3 6 2 0 . 0 0 2 1 3 . 1 0 1 . 3 0 0 . 0 5 9 0 . 0 0 4 1 8 0 . 0 0 + 0 . 0 0 - 3 . 0 0 8 . 0 0 + 0 . 3 0 - 0 . 1 0 0 . 3 1 5 + 0 . 0 1 2 - 0 . 0 0 4 0 . 5 1 8 0 . 0 5 1 7 . 0 8 7 + 0 . 0 0 0 - 0 . 1 1 8 o 1 2 0
m o s f e t c o m c h i p s m d d i o d e s p e c i a l i s t a e d b c f g h i pkg. standard packaging case t ype qty per reel (pcs) 8,000 dfnwb2x2-6l-j reel size (inch) 7 suggested p ad layout size (inch) 0.091 (mm) 2.30 1.40 1.05 0.055 0.041 dfnwb2x2-6l-j 1.00 0.039 a b c d 0.016 0.40 0.66 0.45 0.026 0.018 0.40 0.016 e f g h 0.65 0.026 i marking code part number CJM1206-G marking code 1206 1206 pin 1 pin 1 qw -btr46 comchip t echnology co., l td. page 5 rev :a company reserves the right to improve product design , functions and reliability without notice.
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