page 1 qw -a2009 pe ak es d vo lta ge ca pa bil ity (ie c 61 00 0-4 -2) p ar am et er s ym bo l v al ue 0.9 15 0 8 u ni t v mw fo rw ard cu rre nt , s ur ge pe ak 8.3 m s s ing le ha lf s ine -w av e s up eri mp os ed on ra te loa d( je de c me tho d ) 2.0 a maximum rating and electrical characteristics i fsm p d v f v pv kv maximum forward v oltage drop at i f = 10 ma o maximum power dissipation at 25 c rev :b op era tin g j un cti on an d s tor ag e t em pe rat ur e r an ge -55 to +1 25 t j o c czrur52c2 thru czrur52c39 smd zener diode 0 . 0 7 1 ( 1 . 8 0 ) 0 . 0 6 3 ( 1 . 6 0 ) 0 . 0 3 9 ( 1 . 0 0 ) 0 . 0 3 1 ( 0 . 8 0 ) 0 . 0 3 3 ( 0 . 8 5 ) 0 . 0 2 7 ( 0 . 7 0 ) d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) 0 . 0 2 8 ( 0 . 7 0 ) t y p . 0 . 0 1 8 ( 0 . 4 5 ) t y p . comchip t echnology co., l td. 0 6 0 3 / s o d - 5 2 3 f features -150mw power dissipation. -high v oltages from 2 ~ 39 v . -designed for mounting on small surface. -extremely thin/leadless package. -pb free product. mechanical data -case: 0603 standard package /sod-523f molded plastic. -t erminals: gold plated, solderable per mil-std-750,method 2026. -polarity: indicated by cathode band. -w eight: 0.003 gram(approx.). v oltage 2 to 39 v olts power 150 mw atts rohs device
page 2 czr ur5 2c2 czr ur5 2c2 v2 czr ur5 2c2 v4 czr ur5 2c2 v7 czr ur5 2c3 czr ur5 2c3 v3 czr ur5 2c3 v6 czr ur5 2c3 v9 czr ur5 2c4 v3 czr ur5 2c4 v7 czr ur5 2c5 v1 czr ur5 2c5 v6 czr ur5 2c6 v2 czr ur5 2c6 v8 czr ur5 2c7 v5 czr ur5 2c8 v2 czr ur5 2c9 v1 czr ur5 2c1 0 czr ur5 2c1 1 czr ur5 2c1 2 czr ur5 2c1 3 czr ur5 2c1 5 czr ur5 2c1 6 czr ur5 2c1 8 czr ur5 2c2 0 czr ur5 2c2 2 czr ur5 2c2 4 czr ur5 2c2 7 czr ur5 2c3 0 czr ur5 2c3 3 czr ur5 2c3 6 czr ur5 2c3 9 part num ber m a rk in g cod e z0 z1 z2 z3 z4 z5 z6 z7 z8 z9 za zb zc ze zf zg zh zj zk zm zn zp zq zr zs zt zu zv zw zx zy zz 1.90 2.09 2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.65 9.50 10.4 5 1 1.40 12.3 5 14.2 5 15.2 0 17.1 0 19.0 0 20.9 0 22.8 0 25.6 5 28.5 0 31.3 5 34.2 0 37.0 5 min max 2.10 2.31 2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.5 0 1 1.55 12.6 0 13.6 5 15.7 5 16.8 0 18.9 0 21.0 0 23.1 0 25.2 0 28.3 5 31.5 0 34.6 5 37.8 0 40.9 5 5 i z (ma ) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 100 100 85 83 95 95 95 95 95 78 60 40 10 8 7 7 10 15 20 20 25 30 40 50 50 55 80 80 80 80 90 90 max 5 i z (ma ) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 600 600 600 500 500 500 500 500 500 500 480 400 200 150 50 50 50 70 70 90 1 10 1 10 170 170 220 220 220 250 250 250 250 300 max 1 i z (ma ) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 100 100 100 75 50 25 15 10 5 5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 max 1 v r (v) 1 1 1 1 1 1 1 1 2 0.8 1 2 3 5 7 7.5 8.5 9 10 1 1 12 14 15 17 18 20 23 25 27 29 6 v z (v) zzt( ohm ) zzk (ohm ) ir(u a) zene r v oltag e ope ratin g resi stan ce risi ng oper ating res istan ce rev erse curr ent rev :b o electrical characteristics (t a =25 c) smd zener diode qw -a2009 comchip t echnology co., l td.
page 3 o t e m p e r a t u r e c o e f f i c i e n t , ( m v / c ) fig.1 tempera ture coefficents nominal zener vol t age,vol ts - 4 6 5 4 3 2 1 0 1 - 2 - 3 2 1 2 1 1 1 0 9 8 7 6 5 4 3 7 fig.6 typical cap acit ance normal zener vol t age,vol ts c a p a c i t a n c e , p f 0 10 20 30 40 0 50 100 150 200 250 300 350 400 0v bias 1v bias biasa t 50% of v z nom o t a =25 c fig.3 effect of zener vol t age on zener impedance normall zener vol t age,vol ts 5 0 1 1 0 1 1 0 1 0 0 1 0 0 0 o t j =25 c i z (ac)0.1i z (dc) f=1khz d y n a m i c i m p e d a n c e , o h m i z =20ma i z =1ma i z =5ma fig.5 typical leakage current n o m i n a l z e n e r v o l t a g e , v o lt s 1 0 0 1 0 1 0 . 1 0 . 0 1 0 . 0 0 1 0 . 0 0 0 1 0 . 0 0 0 0 1 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 l e a k a g e c u r r e n t , m a o +125 c o +25 c o -55 c f o r w a r d v o l t a g e , v o lt s fig.4 typical for w ard vol t age 0.4 1 10 1 0 0 1 0 0 0 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0 1 . 1 f o r w a r d c u r r e n t , m a o 2 5 c o 7 5 c o 1 2 5 c fig.2 tempera ture coefficents nominal zener vol t age,vol ts o t e m p e r a t u r e c o e f f i c i e n t , ( m v / c ) 1 0 0 1 0 5 0 1 0 1 3 0 2 0 4 0 rev :b ra ting and characteristic cur ves (czrur52c2 thru czrur52c39) smd zener diode qw -a2009 comchip t echnology co., l td.
page 4 z e n e r v o l t a g e , v o lt s z e n e r c u r r e n t , m a z e n e r v o l t a g e , v o lt s z e n e r c u r r e n t , m a fig.7 zener vol t age versus zener current fig.8 zener vol t age versus zener current 0 . 0 1 0 . 1 1 1 0 1 0 0 0 2 4 6 8 1 0 1 2 o t a =25 c 0 . 0 1 0 . 1 1 1 0 1 0 0 1 0 5 0 3 0 2 0 4 0 2 2 v 2 2 v 4 2 v 7 3 3 v 3 3 v 6 3 v 9 4 v 3 4 v 7 5 v 1 5 v 6 6 v 2 6 v 8 7 v 5 8 v 2 9 v 1 1 0 1 1 o t a =25 c 1 2 1 3 1 5 1 6 1 8 2 0 2 2 2 4 2 7 3 0 3 3 3 6 3 9 rev :b smd zener diode qw -a2009 ra ting and characteristic cur ves (czrur52c2 thru czrur52c39) 0 0 . 4 0 . 3 0 . 2 0 . 1 0 1 5 0 1 2 5 1 0 0 7 5 5 0 2 5 p o w e r d i s s i p a t i o n , w a t t s fig.9 steady st a te power dera ting tempera ture(c) o comchip t echnology co., l td.
i n d e x h o l e o 1 2 0 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start d e f b w a p p 0 p 1 d 1 d 2 d w 1 t c direction of feed b c d d d 2 d 1 e f p p 0 p 1 t s y m b o l a w w 1 reel t aping specification ( m m ) ( i n c h ) 0 . 0 3 9 0 . 0 0 4 0 . 0 7 3 0 . 0 0 4 0 . 0 3 9 0 . 0 0 4 0 . 0 6 1 0 . 0 0 2 7 . 0 0 8 0 . 0 4 2 . 3 6 2 m i n . 0 . 5 1 2 0 . 0 0 8 s y m b o l ( m m ) ( i n c h ) 0 . 0 6 9 0 . 0 0 4 0 . 1 3 8 0 . 0 0 2 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 0 . 0 0 9 0 . 0 0 2 0 . 3 1 5 0 . 0 0 8 0 . 5 3 1 m a x . polarity 1 . 0 0 0 . 1 0 1 . 8 5 0 . 1 0 4 . 0 0 0 . 1 0 1 . 5 5 0 . 0 5 3 . 5 0 0 . 0 5 1 . 7 5 0 . 1 0 6 0 . 0 m i n . 1 3 . 0 0 . 2 0 1 . 0 0 0 . 1 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 0 5 0 . 2 3 0 . 0 5 8 . 0 0 0 . 2 0 1 3 . 5 m a x . 1 7 8 1 page 5 rev :b smd zener diode qw -a2009 comchip t echnology co., l td. 0 6 0 3 ( s o d - 5 2 3 f ) 0 6 0 3 ( s o d - 5 2 3 f )
page 6 rev :b smd zener diode qw -a2009 comchip t echnology co., l td. suggested p ad layout size (inch) 0.049 (mm) 1.25 0.60 1.00 0.024 0.039 1.85 0.073 e 0.65 0.026 standard package a b c d a c b e d c a s e t y p e q t y p e r r e e l ( p c s ) 4 0 0 0 0 6 0 3 / s o d - 5 2 3 f r e e l s i z e ( i n c h ) 7 0 6 0 3 / s o d - 5 2 3 f
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