integrated device technology, inc. military and commercial temperature ranges may 1992 1992 integrated device technology, inc. 7.20 dsc-4612/2 features: faster than amd? am29827 series equivalent to amd? am29827 bipolar buffers in pinout/ function, speed and output drive over full temperature and voltage supply extremes idt54/74fct827a equivalent to fast ? idt54/74fct827b 35% faster than fast idt54/74fct827c 45% faster than fast ? ol = 48ma (commercial), and 32ma (military) clamp diodes on all inputs for ringing suppression cmos power levels (1mw typ. static) ttl input and output level compatible cmos output level compatible substantially lower input current levels than amd? bipolar am29800 series (5 m a max.) product available in radiation tolerant and radiation enhanced versions military product compliant to mil-std-883, class b description: the idt54/74fct800 series is built using an advanced dual metal cmos technology. the idt54/74fct827a/b/c 10-bit bus drivers provide high-performance bus interface buffering for wide data/ ad- dress paths or buses carrying parity. the 10-bit buffers have nand-ed output enables for maximum control flexibility. all of the idt54/74fct800 high-performance interface family are designed for high-capacitance load drive capability, while providing low-capacitance bus loading at both inputs and outputs. all inputs have clamp diodes and all outputs are designed for low-capacitance bus loading in high-impedance state. idt54/74fct827a idt54/74fct827b idt54/74fct827c d 0 y 0 d 1 y 1 d 2 y 2 d 3 y 3 d 4 y 4 d 5 y 5 d 6 y 6 d 7 y 7 d 8 y 8 d 9 y 9 oe 1 oe 2 2609 drw 01 high-performance cmos buffers the idt logo is a registered trademark of integrated device technology, inc. fast is a trademark of national semiconductor co. functional block diagram product selector guide 2609 tbl 01 1 10-bit buffer non-inverting idt54/74fct827a/b/c
7.20 2 idt54/74fct827a/b/c high-performance cmos buffers military and commercial temperature ranges logic symbol pin configurations pin description function table (1) note : 2609 tbl 03 1. h = high, l = low, x = don? care, z = high impedance 2609 tbl 02 absolute maximum ratings (1) capacitance (t a = +25 c, f = 1.0mhz) notes : 2609 tbl 04 1. stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating con- ditions for extended periods may affect reliability. no terminal voltage may exceed v cc by +0.5v unless otherwise noted. 2. input and vcc terminals only. 3. outputs and i/o terminals only. symbol parameter (1) conditions typ. max. unit c in input capacitance v in = 0v 6 10 pf c out output capacitance v out = 0v 8 12 pf note : 2609 tbl 05 1. this parameter is measured at characterization but not tested. dip/cerpack/soic top view lcc top view symbol rating commercial military unit v term (2) terminal voltage with respect to gnd ?.5 to +7.0 ?.5 to +7.0 v v term (3) terminal voltage with respect to gnd ?.5 to v cc ?.5 to v cc v t a operating temperature 0 to +70 ?5 to +125 c t bias temperature under bias ?5 to +125 ?5 to +135 c t stg storage temperature ?5 to +125 ?5 to +150 c p t power dissipation 0.5 0.5 w i out dc output current 120 120 ma oe 1 d 0-9 y 0-9 10 oe 2 oe 1 d 0 d 1 d 2 d 3 d 4 d 5 d 6 d 7 gnd y 0 y 1 y 2 y 3 y 4 y 6 y 5 y 7 v cc 1 2 3 4 5 6 7 8 9 10 13 14 15 16 17 18 19 20 p24-1 d24-1 e24-1 & so24-2 11 12 21 22 23 24 d 8 d 9 y 8 y 9 index d 2 y 2 y 3 y 4 nc y 5 oe 1 d 1 nc v cc y 0 d 8 gnd oe 2 y 9 y 8 32 20 19 1 4 5 6 7 8 18 17 16 15 14 9 10 11 1213 l28-1 d 3 d 4 nc d 5 d 6 d 7 d 0 y 1 y 6 y 7 21 22 23 24 25 26 27 28 d 9 nc oe 2 10 2609 drw 02 2609 drw 03 2609 drw 04 name i/o description oe i i when both are low, the outputs are enabled. when either one or both are high, the outputs are high z. d i i 10-bit data input. y i o 10-bit data output. inputs output oe oe 1 oe oe 2 d i y i function l l l l l h l h transparent h x x h x x z z three-state
idt54/74fct827a/b/c high-performance cmos buffers military and commercial temperature ranges 7.20 3 dc electrical characteristics over operating range following conditions apply unless otherwise specified: v lc = 0.2v; v hc = v cc C 0.2v commercial: t a = 0 c to +70 c, v cc = 5.0v 5%; military: t a = C55 c to +125 c, v cc = 5.0v 10% notes : 2609 tbl 06 1. for conditions shown as max. or min., use appropriate value specified under electrical characteristics for the applicable device type. 2. typical values are at v cc = 5.0v, +25 c ambient and maximum loading. 3. not more than one output should be shorted at one time. duration of the short circuit test should not exceed one second. 4. this parameter is guaranteed but not tested. symbol parameter test conditions (1) min. typ. (2) max. unit v ih input high level guaranteed logic high level 2.0 v v il input low level guaranteed logic low level 0.8 v i i h input high current v cc = max. v i = v cc 5 m a v i = 2.7v 5 (4) i i l input low current v i = 0.5v C5 (4) v i = gnd C5 i ozh off state (high impedance) v cc = max. v o = v cc 10 m a output current v o = 2.7v 10 (4) i ozl v o = 0.5v C10 (4) v o = gnd C10 v ik clamp diode voltage v cc = min., i n = C18ma C0.7 C1.2 v i os short circuit current v cc = max. (3) , v o = gnd C75 C120 ma v oh output high voltage v cc = 3v, v in = v lc or v hc , i oh = C32 m av hc v cc v v cc = min. i oh = C300 m a v hc v cc v in = v ih or v il i oh = C15ma mil. 2.4 4.3 i oh = C24ma com'l. 2.4 4.3 v ol output low voltage v cc = 3v, v in = v lc or v hc , i ol = 300 m a gnd v lc v v cc = min. i ol = 300 m a gnd v lc (4) v in = v ih or v il i ol = 32ma mil. 0.3 0.5 i ol = 48ma com'l. 0.3 0.5
7.20 4 idt54/74fct827a/b/c high-performance cmos buffers military and commercial temperature ranges power supply characteristics v lc = 0.2v; v hc = v cc C 0.2v notes : 2609 tbl 07 1. for conditions shown as max. or min., use appropriate value specified under electrical characteristics for the applicable device type. 2. typical values are at v cc = 5.0v, +25 c ambient. 3. per ttl driven input (v in = 3.4v); all other inputs at v cc or gnd. 4. this parameter is not directly testable, but is derived for use in total power supply calculations. 5. values for these conditions are examples of the i cc formula. these limits are guaranteed but not tested. 6. i c = i quiescent + i inputs + i dynamic i c = i cc + d i cc d h n t + i ccd (f cp /2 + f i n i ) i cc = quiescent current d i cc = power supply current for a ttl high input (v in = 3.4v) d h = duty cycle for ttl inputs high n t = number of ttl inputs at d h i ccd = dynamic current caused by an input transition pair (hlh or lhl) f cp = clock frequency for register devices (zero for non-register devices) f i = input frequency n i = number of inputs at f i all currents are in milliamps and all frequencies are in megahertz. symbol parameter test conditions (1) min. typ. (2) max. unit i cc quiescent power supply current v cc = max. v in 3 v hc ; v in v lc 0.2 1.5 ma d i cc quiescent power supply current ttl inputs high v cc = max. v in = 3.4v (3) 0.5 2.0 ma i ccd dynamic power supply current (4) v cc = max. outputs open oe 1 = oe 2 = gnd one input toggling 50% duty cycle v in 3 v hc v in v lc 0.15 0.25 ma/ mhz i c total power supply current (6) v cc = max. outputs open fi = 10mhz v in 3 v hc v in v lc (fct) 1.7 4.0 ma 50% duty cycle oe 1 = oe 2 = gnd one bit toggling v in = 3.4v v in = gnd 2.0 5.0 v cc = max. outputs open fi = 2.5mhz v in 3 v hc v in v lc (fct) 3.2 6.5 (5) 50% duty cycle oe 1 = oe 2 = gnd eight bits toggling v in = 3.4v v in = gnd 5.2 14.5 (5)
idt54/74fct827a/b/c high-performance cmos buffers military and commercial temperature ranges 7.20 5 switching characteristics over operating range notes : 2609 tbl 08 1. see test circuit and waveforms. 2. minimum limits are guaranteed but not tested on propagation delays. 3. these parameters are guaranteed but not tested. idt54/74fct827a idt54/74fct827b idt54/74fct827c com'l. mil. com'l. mil. com'l. mil. parameter description conditions (1) min. (2) max. min. (2) max. min. (2) max. min. (2) max. min. (2) max. min. (2) max. unit t plh t phl propagation delay d i to y i c l = 50pf r l = 500 w 1.5 8.0 1.5 9.0 1.5 5.0 1.5 6.5 1.5 4.4 1.5 5.0 ns c l = 300pf (3) r l = 500 w 1.5 15.0 1.5 17.0 1.5 13.0 1.5 14.0 1.5 10.0 1.5 11.0 t pzh t pzl output enable time oe i to y i c l = 50pf r l = 500 w 1.5 12.0 1.5 13.0 1.5 8.0 1.5 9.0 1.5 7.0 1.5 8.0 ns c l = 300pf (3) r l = 500 w 1.5 23.0 1.5 25.0 1.5 15.0 1.5 16.0 1.5 14.0 1.5 15.0 t phz t plz output disable time oe i to y i c l = 5pf (3) r l = 500 w 1.5 9.0 1.5 9.0 1.5 6.0 1.5 7.0 1.5 5.7 1.5 6.7 ns c l = 50pf r l = 500 w 1.5 10.0 1.5 10.0 1.5 7.0 1.5 8.0 1.5 6.0 1.5 7.0
7.20 6 idt54/74fct827a/b/c high-performance cmos buffers military and commercial temperature ranges test circuits and waveforms test circuits for all outputs enable and disable times propagation delay set-up, hold and release times pulse width pulse generator data input timing input asynchronous control preset clear etc. synchronous control preset clear clock enable etc. 3v 1.5v 0v 3v 1.5v 0v 3v 1.5v 0v 3v 1.5v 0v t su t h t rem h t su r t d.u.t. v cc v in c l v out 50pf 500 w 500 w 7.0v same phase input transition 3v 1.5v 0v 1.5v v oh v ol t plh t phl output opposite phase input transition control input 3v 1.5v 0v 3.5v 0v output normally low output normally high switch closed switch open v ol v oh 3v 1.5v 0v t plh t phl 0.3v 0.3v t plz t pzl t pzh t phz 3.5v 0v 1.5v 1.5v enable disable high-low-high pulse low-high-low pulse t w 1.5v 1.5v t notes 2609 drw 11 1. diagram shown for input control enable-low and input control disable-high. 2. pulse generator for all pulses: rate 1.0 mhz; z o 50 w ; t f 2.5ns; t r 2.5ns. switch position test switch open drain disable low closed enable low all other tests open definitions: 2609 tbl 09 c l = load capacitance: includes jig and probe capacitance. r t = termination resistance: should be equal to z out of the pulse generator.
idt54/74fct827a/b/c high-performance cmos buffers military and commercial temperature ranges 7.20 7 ordering information 2609 cnv* 10 idtxxfct xx device type x package x process blank b p d e l so 827a 827b 827c commercial mil-std-883, class b plastic dip cerdip cerpack leadless chip carrier small outline ic non-inverting 10-bit buffer fast non-inverting 10-bit buffer super fast non-inverting 10-bit buffer 54 74 C55 c to +125 c 0 c to +70 c
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