80414tkim tc-00003141/60314hk tc-00003126/31814tkim no.a2308-1/8 semiconductor components industries, llc, 2014 august, 2014 http://onsemi.com NGTB30N60L2WG features ? igbt v ce (sat)=1.4v typ. (i c =30a, v ge =15v) ? igbt i c =100a (tc=25 c) ? igbt t f =80ns typ. ? low switching loss in higher frequency applications ? maximum junction temperature tj=175 c ? diode v f =1.7v typ. (i f =30a) ? diode t rr =70ns typ. ? 5 s short circuit capability ? pb-free, halogen-free and rohs compliance applications ? power factor correction of white goods appliance specifications absolute maximum ratings at ta = 25 c, unless otherwise specified parameter symbol value unit collector to emitter voltage v ces 600 v gate to emitter voltage v ges 20 v collector current (dc) @tc=25 c * 2 i c * 1 100 a limited by tjmax @tc=100 c * 2 30 a pulsed collector current, @tc=100 c * 2 i cpulse 60 a tp=100ms limited by tjmax pulsed collector current, i cpeak 232 a tp=1ms limited by tjmax diode average output current i o 30 a power dissipation p d 225 w tc=25 c (our ideal heat dissipation condition) * 2 junction temperature tj 175 c storage temperature tstg ? 55 to +175 c note : *1 collector current is calculated from the following formula. *2 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. orderin g numbe r : ena2308b n-channel igbt with low vf switching diode 600v, 30a, vce(sat);1.4v tjmax - tc i c (tc)= r th (j-c) v ce (sat) (i c (tc)) stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should n ot be assumed, damage may occur and reliability may be affected. ordering information see detailed ordering and shipping inform ation on page 8 of this data sheet. electrical connection n-channel marking g e c to ? 247 c g e case 340ak gtb30n 60l2 lot no.
NGTB30N60L2WG no.a2308-2/8 electrical characteristics at ta = 25 c, unless otherwise specified parameter symbol conditions value unit min typ max collector to emitter breakdown voltage v( br ) ces i c =500 a, v ge =0v 600 v collector to emitter cut off current i ces v ce =600v, v ge =0v tc=25 c 10 a tc=150 c 1 ma gate to emitter leakage current i ges v ge = 20v, v ce =0v 100 na gate to emitter threshold voltage v ge (th) v ce =20v, i c =250 a 4.5 6.5 v collector to emitter saturation voltage v ce ( sat ) v ge =15v, i c =30a tc=25 c 1.4 1.6 v tc=150 c 1.7 v v ge =15v, i c =50a tc=25 c 1.65 v diode forward voltage v f i f =30a 1.7 v input capacitance cies v ce =20v, f=1mhz 4130 pf output capacitance coes 114 pf reverse transfer capacitance cres 96 pf turn-on delay time t d (on) v cc =300v, i c =30a r g =30 , l=200 h v ge =0v/15v vclamp=400v see fig.1, see fig.2 100 ns rise time t r 60 ns turn-on time ton 540 ns turn-off delay time t d (off) 390 ns fall time t f 80 ns turn-off time toff 500 ns turn-on energy eon 0.31 mj turn-off energy eoff 1.14 mj turn-on delay time t d (on) v cc =300v, i c =50a r g =30 , l=200 h v ge =0v/15v vclamp=400v see fig.1, see fig.2 98 ns rise time t r 85 ns turn-on time ton 650 ns turn-off delay time t d (off) 380 ns fall time t f 90 ns turn-off time toff 530 ns turn-on energy eon 0.638 mj turn-off energy eoff 2.755 mj total gate charge qg v ce =300v, v ge =15v, i c =30a 166 nc gate to emitter charge qge 40 nc gate to collector ?miller? charge qgc 70 nc diode reverse recovery time t r r i f =10a, di/dt=100a/ s, v cc =50v, see fig.3 70 ns thermal characteristics at ta = 25 c, unless otherwise specified parameter symbol conditions value unit thermal resistance igbt (junction to case) rth(j-c) (igbt) tc=25 c (our ideal heat dissipation condition)*2 0.67 c /w thermal resistance diode (junction to case) rth(j-c) (diode) tc=25 c (our ideal heat dissipation condition)*2 1.5 c /w thermal resistance (junction to ambient) rth(j-a) 41 c /w note : *2 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product per formance may not be indicated by the electrical characteristics if operated under different conditions.
NGTB30N60L2WG no.a2308-3/8
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NGTB30N60L2WG no.a2308-5/8
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NGTB30N60L2WG no.a2308-7/8 fig.1 switching time test circuit fig.2 timing chart fig.3 reverse recovery time test circuit 90% 0 90% 0 10% 10% v ge v ce i c 10% 10% 90% 10% t o ff t d (off) t f t r t d (on) t on
NGTB30N60L2WG ps no.a2308-8/8 package dimensions NGTB30N60L2WG to-247 case 340ak issue o unit : mm ordering & package information device package shipping note NGTB30N60L2WG to-247-3l 30 pcs. / tube pb-free and halogen free on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc) or its subsidiaries in the united st ates and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a lis ting of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . scillc reserves the right to make changes with out further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any parti cular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specific ations can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated fo r each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc pro ducts are not designed, intended, or authorized for use as com ponents in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees ar ising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that sci llc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject t oall applicable copyright laws and is not for resale in any manner.
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