st 2309es p channel enhancement mode mosfet - 3 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st 2309es 20 1 5 . rev.1 description st 2309es is the p - channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in - line power loss are required. the product is in a very small outline surface mount package. pin configuration sot - 23 1.gate 2.source 3.drain part marking sot - 23 y: year code a: process code feature ! - 6 0v/ - 3 . 0 a, r ds(on) = 16 0 m - ohm @vgs = - 10v ! - 6 0v/ - 1 . 5 a, r ds(on) = 200 m - ohm @vgs = - 4.5v ! sup e r high density cell design for extremely low r ds(on) ! exceptional on - resistance and maximum dc c urrent capability ! sot - 23 package design 3 1 2 d g s 3 1 2 21 ya
st 2309es p channel enhancement mode mosfet - 3 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st 2309es 20 1 5 . rev.1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain - source voltage v dss - 6 0 v gate - source voltage v gss 20 v continuous drain currenttj=150 ) t a =25 t a =70 i d - 3 . 0 - 1 . 3 a pulsed drain current i dm - 9 a continuous source current (d iode conduction) i s - 2 .2 a power dissipation t a =25 t a =70 p d 1.5 0.8 w operation junction temperature t j 150 storgae temperature range t stg - 55/150 thermal resistance - junction to ambient r ja 100 /w
st 2309es p channel enhancement mode mosfet - 3 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st 2309es 20 1 5 . rev.1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain - source breakdown voltage v (br)dss v gs =0v,i d = - 10ua - 6 0 v gate threshold voltage v gs(th) v ds =vgs,i d = - 250ua - 1.0 - 2.5 v gate leakage current i gss v ds =0v,v gs = 2 0 v 100 na zero gate voltage drain current i dss v ds = - 48 v,v gs =0v - 1 ua v ds = - 48 v,v gs =0v t j =55 - 10 drain - source on - resistance r ds(on) v gs = - 10v,i d = - 3 . 0 a v gs = - 4.5v,i d = - 1 . 5 a 0. 150 0.1 8 5 0.160 0.200 forward transconductance g fs v ds = - 10v,i d = - 1.7v 2.4 s diode forward voltage v sd i s = - 1 a,v gs =0v - 0.8 - 1. 0 v dynamic total gate charge q g v ds = - 3 0 v v gs = - 10v i d - 1 a 1 .8 nc gate - source charge q gs 6 gate - drain charge q gd 1.5 input capacitance c iss v ds = - 25 v v gs =0v f=1mh z 28 0 pf output capacitance c oss 50 reverse transfer capacitance c rss 45 turn - on time t d(on) tr v dd = - 3 0 v r l =30 i d = - 3 .0a v gen = - 10 v r g = 1 6 10 ns 10 15 turn - off time t d(off) tf 15 20 11 14
st 2309es p channel enhancement mode mosfet - 3 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st 2309es 20 1 5 . rev.1 typical characterictics (25 unless noted)
st 2309es p channel enhancement mode mosfet - 3 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st 2309es 20 1 5 . rev.1 typical characterictics (25 unless noted)
st 2309es p channel enhancement mode mosfet - 3 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st 2309es 20 1 5 . rev.1 typical characterictics (25 unless noted)
st 2309es p channel enhancement mode mosfet - 3 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st 2309es 20 1 5 . rev.1 typical characterictics (25 unless noted)
st 2309es p channel enhancement mode mosfet - 3 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st 2309es 20 1 5 . rev.1 s ot - 23 package outline
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