dmn33d8lv document number: ds36892 rev. 2 - 2 1 of 6 www.diodes.com july 2014 ? diodes incorporated dmn33d8l v new product advance information new product dual n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c 30v 3 ? @ v gs = 4.5v 350 ma 7 ? @ v gs = 2.5v description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? motor control ? power management functions ? dc-dc converters ? backlighting features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? esd protected gate to 2kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot563 ? case material: molded plasti c, ?green? molding compound ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte ti n annealed over copper leadframe solderable per mil-std-202, method 208 ? weight: 0.006 grams (approximate) ordering information (note 4) part number case packaging dmn33d8lv-7 sot563 3k/tape & reel DMN33D8LV-13 sot563 10k/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot563 top view esd protected equivalent circuit s 1 d 1 d 2 s 2 g 1 g 2 33b = product type marking code ym = date code marking y = year ex: v = 2008 m = month ex: 9 = september 33b ym s 1 d 2 g 1 d 1 s 2 g 2 e3
dmn33d8lv document number: ds36892 rev. 2 - 2 2 of 6 www.diodes.com july 2014 ? diodes incorporated dmn33d8l v new product advance information new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = 4.5v steady state t a = +25c t a = +70c i d 350 200 ma maximum continuous body diode forward current (note 5) i s 0.5 a pulsed drain current (10s pulse, duty cycle=1%) i dm 0.8 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) t a = +25c p d 0.43 w t a = +70c 0.20 thermal resistance, junction to ambient (note 5) steady state r ja 288 c/w operating and storage temperature range t j, t stg -55 to 150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 1ma zero gate voltage drain current @t c = +25c i dss ? ? 1 a v ds = 30v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = 16v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs(th) 0.8 ? 1.5 v v ds = 3v, i d = 100 a static drain-source on-resistance r ds(on) ? ? 2.4 ? v gs = 10v, i d = 250ma ? ? 3.0 v gs = 4.5v, i d = 250ma ? ? 5.0 v gs = 4.0v, i d = 10ma ? ? 7.0 v gs = 2.5v, i d = 10ma forward transfer admittance |y fs | 10 ? - ms v ds = 3v, i d = 10ma diode forward voltage v sd ? ? 1.2 v v gs = 0v, i s = 115ma dynamic characteristics (note 7) input capacitance c iss ? 48 ? pf v ds = 5v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 11 ? pf reverse transfer capacitance c rss ? 8 ? pf total gate charge (v gs = 4.5v) q g ? 0.55 ? nc v gs = 10v, v ds = 10v, i d = 250ma total gate charge (v gs = 10v) q g ? 1.23 ? nc gate-source charge q gs ? 0.14 ? nc gate-drain charge q gd ? 0.14 ? nc turn-on delay time t d(on) ? 2.9 ? ns v dd = 30v, v gs = 10v, r g = 25 ? , i d = 200ma turn-on rise time t r ? 2.6 ? ns turn-off delay time t d(off) ? 18.2 ? ns turn-off fall time t f ? 13.6 ? ns notes: 5. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to product testing.
dmn33d8lv document number: ds36892 rev. 2 - 2 3 of 6 www.diodes.com july 2014 ? diodes incorporated dmn33d8l v new product advance information new product v , drain-source voltage (v) figure 1 typical output characteristics ds i, d r ain c u r r en t (a) d 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1 1.5 2 2.5 3 v= 2.5v gs v= 2.0v gs v= 1.8v gs v= 1.6v gs v= 3.0v gs v = 10v gs v= 4.0v gs v= 4.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ai n c u r r e n t (a) d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.5 1 1.5 2 2.5 3 3.5 4 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v = 2.5v gs v = 4.5v gs v = 10v gs v = 4.0v gs i , drain current (a) d figure 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- r esistance ( ) ds(on) 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t , junction temperature ( c) figure 5 on-resistance variation with temperature j r , d r ain-s o u r c e on-resistance (normalized) ds(on) -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 300ma gs d v=v i = 500ma gs d 10 t , junction temperature ( c) figure 6 on-resistance variation with temperature j r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0 0.1 0.2 0.3 0.4 0.5 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 300ma gs d v=v i = 500ma gs d 10
dmn33d8lv document number: ds36892 rev. 2 - 2 4 of 6 www.diodes.com july 2014 ? diodes incorporated dmn33d8l v new product advance information new product t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j v, g a t e t h r es h o ld v o l t a g e (v) gs(th) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 i= 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i, s o u r c e c u r r ent (a) s t = 150c a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.3 0.6 0.9 1.2 1.5 t = 125c a t = 85c a t = 25c a t= -55c a v , drain-source voltage (v) ds figure 9 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e (pf) t 1 10 100 0102030 f = 1mhz c iss c oss c rss q(nc) g , total gate charge figure 10 gate charge v g a t e t h r es h o ld v o l t a g e (v) gs 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v = 10v i= a ds d 250m t1, pulse duration time (sec) figure 11 transient thermal resistance r(t), t r ansien t t h e r mal r esis t an c e r (t) = r(t) * r r = 289c/w duty cycle, d = t1/ t2 ? ja ja ja d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
dmn33d8lv document number: ds36892 rev. 2 - 2 5 of 6 www.diodes.com july 2014 ? diodes incorporated dmn33d8l v new product advance information new product package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
dmn33d8lv document number: ds36892 rev. 2 - 2 6 of 6 www.diodes.com july 2014 ? diodes incorporated dmn33d8l v new product advance information new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prope rly used in accordance with instructions for use provided in the labeling can be reasonably expected to re sult in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
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