wph4003 no. a1967-1/7 features ? on-resistance rds (on) =8.2 (typ.) ? 10v drive ? input capacitance ciss=850pf (typ.) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 1700 v gate-to-source voltage v gss 30 v drain current (dc) i dc *1 limited only maximum temperature tch=150 c3a i dpack *2 tc=25 c (sanyo?s ideal heat dissipation condition) *3 2.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 6 a allowable power dissipation p d 3.0 w tc=25 c55w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *4 e as 49 mj avalanche current *5 i av 3a note : * 1 shows chip capability * 2 package limited * 3 sanyo?s condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator mad e of aluminium. * 4 v dd =50v, l=10mh, i av =3a (fig.1) * 5 l 10mh, single pulse package dimensions unit : mm (typ) 7538a-002 n0712 tkim tc-00002823/hd 120910 qb sanyo semiconductors data sheet wph4003 n-channel silicon mosfet general-purpose switching device applications http://www.sanyosemi.com/en/network/ ordering number : ENA1967a product & package information ? package : to-3pf-3l ? jeita, jedec : sc-96 ? minimum packing quantity : 30 pcs./magazine marking electrical connection 1 3 2 ph4003 lot no. 1 : gate 2 : drain 3 : source sanyo : to-3pf-3l 15.5 5.5 3.0 0.9 0.75 3.6 2.0 2.0 4.0 123 3.5 5.0 2.0 4.5 3.3 10.0 25.0 24.5 19.3 5.45 5.45 2.0 wph4003-1e
wph4003 no. a1967-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 1700 v zero-gate voltage drain current i dss v ds = 1360 v, v gs =0v 1ma gate-to-source leakage current i gss v gs = 30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 24v forward transfer admittance | yfs | v ds =20v, i d = 1.5 a 1.2 2.4 s static drain-to-source on-state resistance r ds (on) i d = 1.5 a, v gs =10v 8.2 10.5 input capacitance ciss v ds =30v, f=1mhz 850 pf output capacitance coss 90 pf reverse transfer capacitance crss 27 pf turn-on delay time t d (on) see fig.2 19 ns rise time t r 21 ns turn-off delay time t d (off) 200 ns fall time t f 55 ns total gate charge qg v ds =200v, v gs =10v, i d =3a 48 nc gate-to-source charge qgs 6nc gate-to-drain ?miller? charge qgd 22 nc diode forward voltage v sd i s =3a, v gs =0v 0.8 1.5 v reverse recovery time t rr see fig.3 i s =3a, v gs =0v, di/dt=100a/ s 410 ns reverse recovery charge q rr 3000 nc fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit fig.3 reverse recovery time test circuit ordering information device package shipping memo wph4003-1e to-3pf-3l 30pcs./magazine pb free 50 50 rg v dd l 10v 0v wph4003 g s d p. g 50 g s d i d =1.5a r l =125 v dd =200v v out wph4003 v in pw 10 s d.c. 1% 10v 0v v in v dd =50v wph4003 500 h driver mosfet g s d
wph4003 no. a1967-3/7 drain to source voltage, v ds -- v drain current, i d -- a gate to source voltage, v gs -- v drain current, i d -- a i d -- v ds i d -- v gs it16973 it16974 0 0 6 4 5 3 2 50 40 10 30 20 45 35 525 15 1 0 0 6 5 4 3 14 26 4 8 10 12 2 1 v gs =4v 5v 6v 10v --25 c 25 c tc= 75 c tc=25 c v ds =20v static drain to source on state resistance, r ds (on) -- static drain to source on state resistance, r ds (on) -- case temperature, tc -- c forward drain to source voltage, v sd -- v forward drain current, i s -- a gate to source voltage, v gs -- v r ds (on) -- v gs r ds (on) -- tc i s -- v sd it16975 it16963 --50 --25 0 25 50 75 100 125 150 0.0 25.0 10.0 20.0 15.0 5.0 it16965 0 0.4 0.2 0.6 0.8 1.2 1.0 0.01 0.1 1.0 10 7 5 3 2 7 5 3 2 7 5 3 2 25 c --25 c tc=75 c single pulse v gs =0v v gs =10v, i d =1.5a 0 0 20 16 12 10 9 8 6 5 47 8 4 18 14 10 6 2 single pulse i d =1.5a 75 c 25 c tc= --25 c total gate charge, qg -- nc gate to source voltage, v gs -- v qg -- v gs it16967 0 4 0 10 3 2 1 8 9 7 6 5 60 30 20 40 50 10 drain current, i d -- a forward transfer admittance, | y fs | -- s | y fs | -- i d it16964 0.1 0.01 2 3 5 7 2 3 5 7 2 3 5 7 10 1.0 1.0 2 3 5 7 2 3 5 7 10 0.1 v ds =20v 25 c tc= --25 c 75 c single pulse drain to source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it16966 f=1mhz ciss coss crss 0 7 100 10 1000 5 3 2 7 5 3 2 7 5 3 2 50 30 5152025354045 10 10000 v ds =200v id=3a 8v
wph4003 no. a1967-4/7 ambient temperature, ta -- c avalanche energy derating factor -- % drain to source voltage, v ds -- v drain current, i d -- a a s o eas -- ta it16969 it16972 0 0 20 40 60 80 100 175 120 50 100 150 25 75 125 1.0 10.0 2 3 5 7 2 3 5 7 2 3 5 7 0.1 0.01 23 57 23 57 23 57 23 57 1.0 1 100 10 1000 operation in this area is limited by r ds (on). 10 s 10 0 s 10ms 1ms 100ms i dc ( * 1) =3a i dpack ( * 2) =2.5a i dp =6a (pw 10 s) dc operation tc=25 c single pulse ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w p d -- ta p d -- tc it16970 it16971 0 0 20 40 0.5 1.0 60 2.0 1.5 80 100 120 3.0 2.5 3.5 140 160 0 0 20 40 20 10 60 40 30 80 100 120 50 60 140 160 drain current, i d -- a switching time, s/w time -- ns s/w time -- i d it16968 v dd =200v v gs =10v t d (off) t f t r t d (on) 100 10 3 2 5 7 3 2 5 7 0.1 1.0 23 5 23 5 7 23 5 * 1. shows chip capability * 2. sanyo's ideal heat dissipation condition
wph4003 no. a1967-5/7 magazine speci cation wph4003-1e
wph4003 no. a1967-6/7 outline drawing wph4003-1e mass (g) unit 5.5 * for reference mm
wph4003 ps no. a1967-7/7 this catalog provides information as of november, 2012. speci cations and information herein are subject to change without notice. note on usage : since the wph4003 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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