r 201509a 16 npn ? npn epitaxial silicon transistor 3DG5551 order codes ? marking halogen free ? package ? packaging 3DG5551-o-t-n-c 5551 no to-92 ? bag 3DG5551-o-t-n-a 5551 no to-92 brede 3DG5551-o-n1-n-a g no sot-23 brede ? main characteristics i c 0.6a v ceo 160v p c (to-92) 0.625w p c (sot-23) 0.350w ? package sot-23 to-92 ? z ??? z ?? z ???? applications z high frequency switching powe r supply z high frequency power transform z commonly power amplifier circui t ? z z ?? z 3cg5401 z rohs? features z epitaxial silicon z high switching speed z complementary to 3cg5401 z rohs product ? order message
r 3DG5551 201509a 2/6 ?? absolute ratings (tc=25 ) electrical characteristic thermal characteristic ? parameter symbol ? value(min) ? value(max) unit ? to-92 thermal resistance junction ambient to-92 r th(j- a ) - 125 /w ? sot-23 thermal resistance junction ambient sot-23 r th(j- a ) - 357 /w ? parameter symbol ? value unit ? ?? collector- base voltage i e =0 v cbo 180 v ? ?? collector- emitter voltage i b =0 v ceo 160 v ? ?? emitter-base voltage i c =0 v ebo 6 v ??? collector current dc i c 0.6 a ??? total dissipation (to-92) p c 0.625 w ??? total dissipation (sot-23) p c 0.350 w ? junction temperature t j 150 ? storage temperature t stg -55~+150 ? parameter tests conditions ? value(min) ? value(typ) ? value(max) unit v (br) cbo i c =100ua,i e =0 180 - - v v (br) ceo i c =1ma,i b =0 160 - - v v (br) ebo i e =100ua,i c =0 6 - - v i cbo v cb =120v, i e =0 - - 50 na i ebo v eb =4v, i c =0 - - 50 na hfe(1) v ce =5v, i c =1ma 80 - - hfe(2) v ce =5v, i c =10ma 80 160 250 hfe(3) v ce =5v, i c =50ma 80 - - i c =10ma, i b =1ma - - 0.15 v v ce(sat) i c =50ma, i b =5ma - - 0.2 v i c =10ma, i b =1ma - - 1.0 v v be(sat) i c =50ma, i b =5ma - - 1.0 v f t v ce =10v, i c =50ma 100 - mhz
r 3DG5551 201509a 3/6 electrical characteristics (curves) 1e-3 0.01 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 25 ic/ib=10 125 vbesat(v) ic(a) 1e-3 0.01 0.1 0.05 0.10 0.15 0.20 0.25 0.30 25 ic/ib=10 125 vcesat(v) ic(a) 1e-4 1e-3 0.01 0.1 1 10 100 25 125 vce=5v hfe ic(a) power derating factor hfe ? i c v be sat - i c v ce(sat) - i c p c -t c
r 3DG5551 201509a 4/6 ? package mechanical data to-92 unit mm symbol ?? mm size mm a 3.30-3.90 b 0.35-0.55 c 0.31-0.51 d 4.30-4.90 e 4.30-4.90 e 1.17-1.37 l 12.50-15.50 q1 0.85-1.00 symbol ?? mm size mm a 4.30-4.90 a1 4.30-4.90 a2 3.30-3.90 c typ 0.45 f1/f2 2.20-2.80 w1 17.5-18.5 w2 5.50-6.50 h1 22.0-27.0 h2 18.0-20.0 h3 15.0-17.0 h4 8.50-9.50 p1 12.5-12.9 p2 6.00-6.70 p3 12.5-12.9 t 0.40-0.45 d 3.80-4.20 h 0.00-1.00
r 3DG5551 201509a 5/6 ? package mechanical data sot-23 unit mm
r 3DG5551 201509a 6/6 ? appendix ?? revision history date ? last rev. new rev. ? description of changes 2015-9-18 201509a ? 1. ?????????? ?????? ??? 2. ?????? ? 3. ????? ????? 4. ??? note 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this. specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86-432-64678411 86-432-64665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86-432-64675588 64675688 64678411 : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 te l 86-432-64678411 fax 86-432-64665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411 fax: 86-432-64671533
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