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| i nchange semiconductor isc product sp ecification 1 isc website isc & iscsemi is registered trademark isc silicon npn power transistors 2sb1261 - k description low collector saturation voltage high power dissipation - : p c = 10 w(max)@t c =25 complement to t ype 2 s d1899 - k applications des igned for use in audio amplifier and switching , especially in hybrid integrated circuits. a bsolute maximum ratings (t a = 25 symbol parameter value unit v cbo collector - b ase v oltage - 60 v v ceo collector - e mitter v oltage - 60 v v ebo emitter - b ase v olta ge - 7 v i c collector c urrent - continuous - 3 a p c collector p ower d issipat i on @ t c =25 10 w t j junction t emperature 150 t stg storage t emperature - 5 5 ~15 0
i nchange semiconductor isc product specification 2 isc website isc & iscsemi is registered trademark isc silicon npn power transistors 2s b1261 - k electrical characteristics tj=2 5 v (br) cbo collector - b ase breakdown v oltage i c = - 100 a ; i e = 0 - 60 v v (br) ceo collector - e mitter breakdown v oltage i c = - 1m a ; i b = 0 - 60 v v (br) ebo emitt er - b ase breakdown v ltage i e = - 100 a; i c = 0 - 7 v v c e ( sat ) collector - e mitter s aturation v oltage i c = - 1.5 a ; i b = - 0.1 5 a - 0.3 v v be ( sat ) base - e mitter s aturation v oltage i c = - 1.5 a ; i b = - 0.15a - 1.2 v i cbo collector c utoff c urrent v cb = - 60 v ; i e = 0 - 10 a i ebo emitter c utoff c urrent v eb = - 7 v; i c = 0 - 10 a h fe 1 dc c urrent g ain i c = - 0.2 a; v ce = - 2 v 60 h fe dc c urrent g ain i c = - 0.6 a; v ce = - 2 v 200 400 h fe dc c urrent g ain i c = - 2 a; v ce = - 2 v 50 c ob output capacitance i e = 0 ; v c b = - 1 0 v ; f= 1mhz 40 pf f t current - gain bandwidth product i e = - 1.5 a; v ce = - 5 v 50 mhz |
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