unisonic technologies co., ltd ut4450 power mosfet www.unisonic.com.tw 1 of 9 copyright ? 2013 unisonic technologies co., ltd qw-r502-898, c 7a, 40v n-channel power mosfet ? description the utc ut4450 is an n-channel mosfet. it uses utc?s advanced technology to provide the customers with a minimum on state resistance, high switchi ng speed and low gate charge. the utc ut4450 is suitable for pwm applications or use as a load switch. ? features * r ds(on) <30m ? @ v gs =10v, i d =7a r ds(on) <38m ? @ v gs =4.5v, i d =5a * high switching speed * low gate charge ? symbol (4) g (1)(2)(3) s (5)(6)(7)(8) d sop-8 ? ordering information ordering number package packing lead free halogen free ut4450l-s08-r UT4450G-S08-R sop-8 tape reel ut4450l-s08-t ut4450g-s08-t sop-8 tube
ut4450 power mosfet unisonic technologies co., ltd 2 of 9 www.unisonic.com.tw qw-r502-898, c ? pin configuration
ut4450 power mosfet unisonic technologies co., ltd 3 of 9 www.unisonic.com.tw qw-r502-898, c ? absolute maximum ratings (t a =25c, unless otherwise noted) parameter symbol ratings unit drain-source voltage v dss 40 v gate-source voltage v gss 20 v drain current continuous t a =25c i d 7 a t a =70c 5.5 a pulsed (note 1) i dm 45 a avalanche current (note 1) i as 14 a avalanche energy l=0.1mh (note 1) e as 10 mj power dissipation (note 2) t a =25c p d 3.1 w t a =70c 2 w junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values be yond which the device coul d be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol min typ max unit junction to ambient t 10s (note 3) ja 31 40 c/w steady-state (note 3, 4) 59 75 c/w notes: 1. repetitive rating, pulse wi dth limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. 2. based on t j ( max ) =150c, using 10s. 3. the device is measur ed that mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. 4. the ja is the sum of the thermal im pedence from junction to lead jl and lead to ambient.
ut4450 power mosfet unisonic technologies co., ltd 4 of 9 www.unisonic.com.tw qw-r502-898, c ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 40 v drain-source leakage current i dss v ds =40v, v gs =0v 1 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1.7 2.5 3 v static drain-source on-state resistance r ds(on) v gs =10v, i d =7a 24 30 m ? v gs =4.5v, i d =5a 30 38 m ? forward transconductance g fs v ds =5v, i d =7a 30 s on state drain current i d ( on ) v gs =10v, v ds =5v 45 a dynamic parameters input capacitance c iss v gs =0v, v ds =20v, f=1.0mhz 516 pf output capacitance c oss 82 pf reverse transfer capacitance c rss 43 pf gate resistance r g v gs =0v, v ds =0v, f=1mhz 4.6 ? switching parameters (note 2) total gate charge q g v gs =4.5v, v ds =20v, i d =7a 4.3 7 nc total gate charge q g v gs =10v, v ds =20v, i d =7a 8.9 13 nc gate to source charge q gs 2.4 nc gate to drain charge q gd 1.4 nc turn-on delay time t d ( on ) v ds =20v, v gs =10v, r gen =3 ? , r l =2.8 ? 6.4 ns rise time t r 3.6 ns turn-off delay time t d ( off ) 16.2 ns fall-time t f 6.6 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 3.5 a drain-source diode forward voltage v sd i s =1a, v gs =0v 0.76 1 v body diode reverse recovery time t rr i f =7a, di/dt=100a/s 18 ns body diode reverse recovery charge q rr 10 nc
ut4450 power mosfet unisonic technologies co., ltd 5 of 9 www.unisonic.com.tw qw-r502-898, c ? test circuits and waveforms v gs dut r g v ds r d resistive switching test circuit resistive switching waveforms v ds v gs 90% 10% t d(on) t r t f t d(off) 10v t on t off
ut4450 power mosfet unisonic technologies co., ltd 6 of 9 www.unisonic.com.tw qw-r502-898, c v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
ut4450 power mosfet unisonic technologies co., ltd 7 of 9 www.unisonic.com.tw qw-r502-898, c ? typical characteristics drain current,i d (a) drain current,-i d (a) drain to source on-resistance, r ds(on) (m ) normalized on-resistance reverse drain current,i s (a) drain to source on-resistance, r ds(on) (m )
ut4450 power mosfet unisonic technologies co., ltd 8 of 9 www.unisonic.com.tw qw-r502-898, c ? typical characteristics(cont.) gate to source voltage,v gs (v) c a p a c i t a n c e ( p f ) drain current,i d (a) power (w) normalized transient thermal resistance,z ja
ut4450 power mosfet unisonic technologies co., ltd 9 of 9 www.unisonic.com.tw qw-r502-898, c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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