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FNA51060T3 motion spm? 55 series s eptember 2014 ?2014 fairchild semiconductor corporation 1 www.fairchildsemi.com FNA51060T3 rev. c0 FNA51060T3 motion spm ? 55 series features ? ul certified no. e209204 (ul1557) ? 600 v - 10 a 3-phase igbt inverter including control ic for ga te drive and protections ? low-loss, short-circuit rated igbts ? separate open-emitter pins from low-side igbts for three-phase cu rrent sensing ? active-high interface, wo rks with 3.3 / 5 v logic, schmitt-trigge r input ? hvic for gate driving, under-voltage and short-cir - cuit current protection ? fault output for under-voltage and short-circuit cur - rent protection ? inter-lock function to prevent short-circuit ? shut-down input ? hvic temperature-sensing built-in for temperature monitoring ? optimized for 5 khz switching frequency ? isolation rating: 1500 v rms / min. applications ? motion control - home appliance / industrial motor related resources general description FNA51060T3 is a motion spm 55 module providing a fully-featured, high-performanc e inverter output stage for ac induction, bldc, and pmsm motors. these modules integrate optimized gate drive of the built-in igbts to minimize emi and losses, while also providing multiple on-module protection features including under-voltage lockouts, inter-lock function, over-current shutdown, thermal monitoring of drive ic, and fault reporting. the built-in, high-speed hvic requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's robust short- circuit-rated igbts. separate negative igbt terminals are available for each phase to support the widest variety of control algorithms. package marking and ordering info rmation figure 1. 3d package drawing (click to activate 3d content) device device marking package packing type quantity FNA51060T3 FNA51060T3 spmfa-a20 rail 13
FNA51060T3 motion spm? 55 series ?2014 fairchild semiconductor corporation 2 www.fairchildsemi.com FNA51060T3 rev. c0 integrated power functions ? 600 v - 10 a igbt inverter for three phase dc / ac power conversion (please refer to figure 3) integrated drive, protectio n and system control functions ? for inverter high-side igbts: gate drive circ uit, high-voltage isolated high-speed level shifting
FNA51060T3 motion spm? 55 series ?2014 fairchild semiconductor corporation 3 www.fairchildsemi.com FNA51060T3 rev. c0 pin descriptions pin number pin name pin description 1 p positive dc-link input 2 u, v s (u) output for u phase 3 v, v s (v) output for v phase 4 w, v s (w) output for w phase 5 n u negative dc-link input for u phase 6 n v negative dc-link input for v phase 7 n w negative dc-link input for w phase 8 in (ul) signal input for low-side u phase 9 in (uh) signal input for high- ide u phase 10 in (vl) signal input for low-side v phase 11 in (vh) signal input for high-side v phase 12 in (wl) signal input for low-side w phase 13 in (wh) signal input for high-side w phase 14 v dd common bias voltage for ic and igbts driving 15 com common supply ground 16 c sc capacitor (low-pass filter) for shor t-circuit current detection input 17 v f fault output, shut-down input, temperature output of drive ic 18 v b(w) high-side bias voltage for w-phase igbt driving 19 v b(v) high-side bias voltage for v-phase igbt driving 20 v b(u) high-side bias voltage for u-phase igbt driving
FNA51060T3 motion spm? 55 series ?2014 fairchild semiconductor corporation 4 www.fairchildsemi.com FNA51060T3 rev. c0 internal equivalent circ uit and input/output pins figure 3. internal block diagram note: 1. inverter high-side is composed of three igbts, freewheeling diodes, and one control ic for each igbt. 2. inverter low-side is composed of three igbts, freewheeling diodes, and one control ic for each igbt. it has gate drive and p rotection functions. 3. single drive ic has gate driver for six igbts and protection functions. 4. inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals. vb ho hin lo vs lin csc v f com v dd csc v f in(ul) in(uh) v b(u) in(vh) v b(v) v b(w) in(wh) in(wl) nu nv nw u,vs (u) v,vs (v) w,vs (w) p in(vl) ho lo vs ho lo vs com vdd vb hin lin vb hin lin
FNA51060T3 motion spm? 55 series ?2014 fairchild semiconductor corporation 5 www.fairchildsemi.com FNA51060T3 rev. c0 absolute maximum ratings (t j = 25c, unless otherwise specified.) inverter part note: 5. the maximum junction temperature rating of the power chips integrated within the motion spm ? 55 product is 150 # 150c 10 a i cp each igbt collector current (peak) t c = 25c, t j # 150c, under 1 ms pulse width 20 a p c collector dissipation t c = 25c per chip 22 w t j operating junction temperature (note 5) -40 ~ 150 c symbol parameter conditions rating unit v dd control supply voltage applied between v dd - com 20 v v bs high-side control bias voltage applied between v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) 20 v v in input signal voltage applied between in (uh) , in (vh) , in (wh) , in (ul) , in (vl) , in (wl) - com -0.3 ~ v dd +0.3 v v f fault supply voltage applied between v f - com -0.3 ~ v dd +0.3 v i f fault current sink current at v f pin 5 ma v sc current sensing input voltage applied between c sc - com -0.3 ~ v dd +0.3 v symbol parameter conditions rating unit v pn(prot) self protection supply voltage limit (short circuit protection capability) v dd = v bs = 13.5 ~ 16.5 v t j = 150c, non-repetitive, < 2
FNA51060T3 motion spm? 55 series ?2014 fairchild semiconductor corporation 6 www.fairchildsemi.com FNA51060T3 rev. c0 electrical characteristics (t j = 25c, unless otherwise specified.) inverter part note: 7. t on and t off include the propagation delay of the internal drive ic. t c(on) and t c(off) are the switching time of igbt itself under the given gate driving condition internally. for the detailed information, please see figure 4. figure 4. switching time definition symbol parameter conditions min. typ. max. unit v ce(sat) collector - emitter saturation voltage v dd = v bs = 15 v v in = 5 v i c = 10 a t j = 25c - 1.45 1.85 v t j = 150c - 1.65 - v v f fwdi forward voltage v in = 0 v i f = 10 a t j = 25c - 1.85 2.3 v t j = 150c - 1.75 - v hs t on switching times v pn = 400 v, v dd = v bs = 15 v, i c = 10a t j = 25c v in = 0 v ? ?
FNA51060T3 motion spm? 55 series ?2014 fairchild semiconductor corporation 7 www.fairchildsemi.com FNA51060T3 rev. c0 control part note: 8. short-circuit protection is functioning for all six igbts. figure. 5. v-t curve of temperature output of ic (5v pull-up with 4.7kohm) symbol parameter conditions min. typ. max. unit i qdd quiescent v dd supply current v dd = 15 v, in (uh,vh,wh,ul,vl,wl) = 0 v v dd - com - 2.3 3.4 ma i pdd operating v dd supply current v dd = 15 v, f pwm = 20 khz, duty = 50%, applied to one pwm signal input v dd - com - 2.7 4.0 ma i qbs quiescent v bs supply current v bs = 15 v, in (uh, vh, wh) = 0 v v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) - 60 100
FNA51060T3 motion spm? 55 series ?2014 fairchild semiconductor corporation 8 www.fairchildsemi.com FNA51060T3 rev. c0 recommended oper ating conditions note: 9. this product might not make response if input pulse width is less than the recommanded value. note: 10. rc coupling at each input (parts shown dotted) might change depending on the pwm control scheme used in the application and the wiring impedance of the application?s printed circuit board. the input signal section of the spm 55 product integrates 5 k ( typ.) pull-down resistor. therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. figure 6. recommended mcu i/o interface circuit symbol parameter conditions min. typ. max. unit v pn supply voltage applied between p - n u , n v , n w - 300 400 v v dd control supply voltage applied between v dd - com 14.0 15 16.5 v v bs high - side bias voltage applied between v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) 13.0 15 18.5 v dv dd / dt, dv bs / dt control supply variation -1 - 1 v / # # ?
FNA51060T3 motion spm? 55 series ?2014 fairchild semiconductor corporation 9 www.fairchildsemi.com FNA51060T3 rev. c0 mechanical characteristics and ratings figure 7. flatness measurement position figure 8. mounting screws torque order note: 11. do not make over torque when mounting screws. much mounting torque may cause package cracks, as well as bolts and al heat-s ink destruction. 12. avoid one side tightening stress. figure 10 shows the recommended torque order for mounting screws. uneven mounting can cau se the ceramic substrate of the motion spm 55 product to be damaged. the pre-screwing torque is set to 20 ~ 30 % of maximum torque rating. parameter conditions min. typ. max. unit device flatness see figure 7 -50 - 100
FNA51060T3 motion spm? 55 series ?2014 fairchild semiconductor corporation 10 www.fairchildsemi.com FNA51060T3 rev. c0 time charts of protective function a1 : control supply voltage rises: after the voltage rises uv ddr , the circuits start to operate when next input is applied. a2 : normal operation: igbt on and carrying current. a3 : under voltage detection (uv ddd ). a4 : igbt off in spite of control input condition. a5 : fault output operation starts. a6 : under voltage reset (uv ddr ). a7 : normal operation: igbt on and carrying current. figure 9. under-voltage protection (low-side) b1 : control supply voltage rises: after the voltage reaches uv bsr , the circuits start to operate when next input is applied. b2 : normal operation: igbt on and carrying current. b3 : under voltage detection (uv bsd ). b4 : igbt off in spite of control input c ondition, but there is no fault output signal. b5 : under voltage reset (uv bsr ) b6 : normal operation: igbt on and carrying current figure 10. under-voltage protection (high-side) input signal output current fault output signal control supply voltage reset uv ddr protection circuit state set reset uv ddd a1 a3 a2 a4 a6 a5 a7 input signal output current fault output signal control supply voltage reset uv bsr protection circuit state set reset uv bsd b1 b3 b2 b4 b6 b5 high-level (no fault output)
FNA51060T3 motion spm? 55 series ?2014 fairchild semiconductor corporation 11 www.fairchildsemi.com FNA51060T3 rev. c0 (with the external shunt resistance and cr connection) c1 : normal operation: igbt on and carrying current. c2 : short circuit current detection (sc trigger). c3 : hard igbt gate interrupt. c4 : igbt turns off. c5 : input ?l? : igbt off state. c6 : input ?h?: igbt on state, but during the acti ve period of fault output the igbt doesn?t turn on. c7 : igbt off state figure 11. short-circuit protection d1 : high side first - input - first - output mode d2 : low side noise mode : no lo d3 : high side noise mode : no ho d4 : low side first - input - first - output mode d5 : in - phase mode : no ho figure 12. inter-lock function lower arms control input output current sensing voltage of the shunt resistance fault output signal sc reference voltage cr circuit time constant delay sc protection circuit state set reset c6 c7 c3 c2 c1 c8 c4 c5 internal igbt gate-emitter voltage hin lin ho lo /fo hin : high-side input signal lin : low-side input signal ho : high-side igbt gate voltage lo : low-side igbt gate voltage /fo : fault output d1 d2 d3 d4 d5
FNA51060T3 motion spm? 55 series ?2014 fairchild semiconductor corporation 12 www.fairchildsemi.com FNA51060T3 rev. c0 note: 1) to avoid malfunction, the wiring of each input should be as short as possible. (less than 2 ~ 3 cm) 2) by virtue of integrating an applicatio n specific type of hvic inside the spm ? 55 product, direct coupling to mcu terminals without any opto-coupler or transformer isolation is possible. 3) v f is open-drain type. this signal line should be pulled up to the positive side of the mcu or control power supply with a resist or that makes i fo up to 5 ma. please refer to fig - ure 14. 4) c sp15 of around seven times larger than bootstrap capacitor c bs is recommended. 5) input signal is active-high type. there is a 5 k ? , c ps = 1 nf) 6) to prevent errors of the protection function, the wiring around r f and c sc should be as short as possible. 7) in the short-circuit protection circuit, please select the r f c sc time constant in the range 1.5 ~ 2 ? ) 13) please choose the electrolytic capacitor with good temperature characteristic in c bs . also, choose 0.1 ~ 0.2 u-phase current v-phase current w-phase current r f n w (7) n v (6) n u (5) w (4) v (3) u (2) p (1) (20) v b(u) (19) v b(v) (16) c sc (17) v f (8) in (ul) (10) in (vl) (12) in (wl) (9) in (uh) (11) in (vh) (18) v b(w) (14) v dd (13) in (wh) input signal for short-circuit protection c sc r s r s r s r s r s r s c ps c ps c ps c ps c ps c ps in(wh) in(vh) in(uh) com vdd vs(v) vs(u) vs(w) vb(u) vb(v) vb(w) (15) com out(wh) out(vh) out(uh) temp. monitoring 5v line c spc05 c sp05 c bs c bsc c bs c bsc in(wl) in(vl) in(ul) vf csc out(wl) out(vl) out(ul)
FNA51060T3 motion spm? 55 series ?2014 fairchild semiconductor corporation 13 www.fairchildsemi.com FNA51060T3 rev. c0 detailed package outline drawi ngs (FNA51060T3, long lead)
?2014 fairchild semiconductor corporation www.fairchildsemi.com

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