preliminary datasheet LPM3400 LPM3400 C 01 may.-2013 email: marketing@lowpowersemi.com www.lowpowersemi.com page 1 of 7 LPM3400 - 20v/4.2a n-channel enhancement mode field effect transistor general description the LPM3400 is n-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching are needed. ordering information LPM3400- f: pb-free package type b3: sot23-3 features 20v/4.2a, rdc(on)50m(typ.)@vgs=4.5v 20v/3.9a, rdc(on)63m(typ.)@vgs=2.5v 20v/3.0a, rdc(on)87m(typ.)@vgs=1.8v super high density cell design for extremely low rdc(on) sot23 package applications portable media players cellular and smart mobile phone lcd dsc sensor wireless card marking information xxx : the production cycle and the batch. pin configurations device marking package shipping LPM3400b3f a2xxx sot23-3 3k/reel sot23l(top view)
preliminary datasheet LPM3400 LPM3400 C 01 may.-2013 email: marketing@lowpowersemi.com www.lowpowersemi.com page 2 of 7 functional pin description name description g gate electrode s source d drain electrode absolute maximum ratings absolute maximum ratings ta=25 unless otherwise noted parameter symbol maximum units drain-source voltage vds 20 v gate-source voltage vgs 8 v continuous drain current a ta=25 id 4.2 a ta=70 3.2 pulsed drain current e idm 15 power dissipation ta=25 po 1.4 w ta=70 0.9 junction and storage temperature range tj, tstg -55 to 150 thermal characteristics parameter symbol typ. max. units maximum junction-to-ambient a t 10s rja 70 90 /w maximum junction-to-ambient a steady-state 100 125 /w maximum junction-to-lead c steady-state rjl 63 80 /w
preliminary datasheet LPM3400 LPM3400 C 01 may.-2013 email: marketing@lowpowersemi.com www.lowpowersemi.com page 3 of 7 electrical characteristics symbol parameter condition min. typ. max. units static parameter bvdss drain-source breakdown voltage id=250 avgs=0v 20 v idss zero-gate voltage drain current vds=16v,vgs=0v tj=55 1 a 5 igss gate-body leakage current vds=0v,vgs=8v 100 na vgs(th) gate threshold voltage vds=vgs,id=250 a 0.4 0.6 1 v id(on) on state drain current vds=5v,vgs=4.5v 15 a rds(on) static drain-source on-resistance vgs=4.5v, id=4.2 a tj=125 41 50 m 58 70 vgs=2.5v, id=3.9a 52 63 m vgs=1.8v, id=3a 67 87 m gfs forward transconductance vds=5v,id=4.2a 11 s vsd diode forward voltage is=1a,vgs=0v 0.76 1 v is maximum body-diode continuous current 2 a dynamic parameters ciss input capacitance vds=10v,vgs=0v f = 1mhz 436 pf cdss output capacitance 66 pf crss reverse transfer capacitance 44 pf rg gate resistance vds=0v,vgs=0v f = 1mhz 3 switching parameters qg total gate charge vds=10v,vgs=4.5v id=4.2a 6.2 nc qgs gate source charge 1.6 nc qgd gate drain charge 0.5 nc t d(on) turn-on delay time vds=10v,vgs=5v rl=2.7,rgen=6 5.5 ns tr turn-on rise time 6.3 ns t d(off) turn-off delay time 40 ns tf turn-off fall time 12.7 ns trr body-diode reverse recovery time if=4a,d i/dt=100/s 12.3 ns qrr body-diode reverse recovery charge if=4a,d i/dt=100/s 3.5 nc
preliminary datasheet LPM3400 LPM3400 C 01 may.-2013 email: marketing@lowpowersemi.com www.lowpowersemi.com page 4 of 7
preliminary datasheet LPM3400 LPM3400 C 01 may.-2013 email: marketing@lowpowersemi.com www.lowpowersemi.com page 5 of 7
preliminary datasheet LPM3400 LPM3400 C 01 may.-2013 email: marketing@lowpowersemi.com www.lowpowersemi.com page 6 of 7
preliminary datasheet LPM3400 LPM3400 C 01 may.-2013 email: marketing@lowpowersemi.com www.lowpowersemi.com page 7 of 7 packaging information
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