tsm 9933dcs -20v p-channel power mosfet 1/6 version: d14 sop - 8 key parameter performance parameter value unit v ds -20 v r ds(on) (max) v gs = -4.5v 60 m ? v gs = -2.7v 78 v gs = -2.5v 85 q g 6 nc features advance trench process technology high density cell design for ultra low on-resistan ce block diagram dual p-channel mosfet ordering information part no. package packing tsm9933dcs rl sop-8 2.5kps / 13 reel tsm9933dcs rlg sop-8 2.5kps / 13 reel note: g denotes for halogen- and antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total b r + cl) and <1000ppm antimony compounds absolute maximum ratings (t a =25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -20 v gate-source voltage v gs 12 v continuous drain current, v gs @ 4.5v. i d -4.7 a pulsed drain current, v gs @ 4.5v i dm -20 a continuous source current (diode conduction) (note 1,2) i s -2.5 a maximum power dissipation t a =25 o c p d 2 w t a =70 o c 1.3 operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to case thermal resistance r ? jc 30 o c/w junction to ambient thermal resistance (pcb mounted ) r ? ja 62.5 o c/w pin definition : 1. source 1 8. drain 1 2. gate 1 7. drain 1 3. source 2 6. drain 2 4. gate 2 5. drain 2
tsm 9933dcs -20v p-channel power mosfet 2/6 version: d14 electrical specifications (t j =25 o c unless otherwise noted) parameter conditions symbol min typ max unit static (note 3) drain-source breakdown voltage v gs = 0v, i d = -250a bv dss -20 -- -- v gate threshold voltage v ds = v gs , i d = -250a v gs(th) -0.6 -- -1.4 v gate body leakage v gs = 12v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = -20v, v gs = 0v i dss -- -- -1.0 a on-state drain current v ds =-5v, v gs = -4.5v i d(on) -15 -- -- a drain-source on-state resistance v gs = -4.5v, i d = -4.7a r ds(on) -- 48 60 m ? v gs = -4.5v, i d = -2.9a -- 47 58 v gs = -2.7v, i d = -1.5a -- 60 78 v gs = -2.5v, i d = -3.8a -- 65 85 forward transconductance v ds = -10v, i d = -4.7a g fs -- 11 -- s diode forward voltage i s = -1.7a, v gs = 0v v sd -- -0.8 -1.2 v dynamic (note 4,5) total gate charge v ds = -10v, i d = -4.7a, v gs = -4.5v q g -- 6 9 nc gate-source charge q gs -- 1.4 -- gate-drain charge q gd -- 1.9 -- input capacitance v ds = -10v, v gs = 0v, f = 1.0mhz c iss -- 640 -- pf output capacitance c oss -- 180 -- reverse transfer capacitance c rss -- 90 -- switching (note 4,5) turn-on delay time v dd = -10v, r l = 10 ? , i d = -1a, v gen = -4.5v, r g = 6 ? t d(on) -- 22 35 ns turn-on rise time t r -- 35 55 turn-off delay time t d(off) -- 45 70 turn-off fall time t f -- 25 50 notes: 1. pulse width limited by the maximum junction temp erature 2. surface mounted on fr4 board, t 5 sec. 3. pulse test: pw 300s, duty cycle 2% 4. for design aid only, not subject to production t esting. 5. switching time is essentially independent of ope rating temperature.
tsm 9933dcs -20v p-channel power mosfet 3/6 version: d14 electrical characteristics curves output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm 9933dcs -20v p-channel power mosfet 4/6 version: d14 electrical characteristics curves on-resistance vs. gate-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to -ambient
tsm 9933dcs -20v p-channel power mosfet 5/6 version: d14 sop-8 mechanical drawing unit: millimeters marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen f ree product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
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