up a81 1t npn silicon high frequency transist or silicon transist or ? small package style: 2 ne680 die in a 2 mm x 1.25 mm package ? low noise figure: nf = 1.9 db typ at 2 ghz ? high gain: |s 21e | 2 = 7.5 db typ at 2 ghz ? excellent low voltage, low current performance features outline dimensions (units in mm) package outline s06 (top view) description the upa811t is two npn high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin smt package. each transistor is independently mounted and easily config- ured for either dual transistor or cascode operation. the high f t , low voltage bias and small size make this device ideally suited for pager and other hand-held wireless applications. absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v cbo collector to base voltag e v 20 v ceo collector to emitter voltag e v 10 v ebo emitter to base voltage v 1.5 i c collector curren t ma 35 p t total power dissipation 1 die mw 110 2 die mw 200 t j junction temperature c 150 t stg storage temperature c -65 to +150 note: 1. operation in excess of any one of these parameters may result in permanent damage. t 1 1 8 a p u r e b m u n t r a p 6 0 s e n i l t u o e g a k c a p symbols parameters and conditions units min typ max i cbo collector cutoff current at v cb = 10 v, i e = 0 0 . 1 a i ebo emitter cutoff current at v eb = 1 v, i c = 0 0 . 1 a h fe 1 forward current gain at v ce = 3 v, i c 0 0 2 0 2 1 0 8 a m 5 = f t gain bandwidth at v ce = 3 v, i c = 5 ma ghz 5.5 8.0 cre 2 feedback capacitance at v cb = 3 v, i e 7 . 0 3 . 0 f p z h m 1 = f , 0 = | s 21e | 2 insertion power gain at v ce = 3 v, i c = 5 ma, f = 2 gh z db 5.5 7.5 nf noise figure at v ce = 3 v, i c 2 . 3 9 . 1 b d z h g 2 = f , a m 5 = electrical characteristics (t a = 25 c) notes: 1 . pulsed measurement, pulse width 350 s, duty cycle 2 %. 2 . the emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. for tape and reel version use part number upa811t-t1, 3k per reel. note: pin 3 is identified with a circle on the bottom of the package. pin out 1. collector transistor 1 2. base transistor 2 3. collector transistor 2 4. emitter transistor 2 5. emitter transistor 1 6. base transistor 1 2.1 0.1 1.25 0.1 0 ~ 0.1 0.15 0.9 0.1 0.7 2.0 0.2 0.65 1.3 1 2 3 4 5 6 0.2 (all leads) +0.10 - 0.05
total power dissipation vs. ambient temperature collector current vs. collector to emitter voltage total power dissipation, p t (mw) ambient temperature, t a ( c) collector to emitter voltage, v ce (v) collector current, i c (ma) collector current vs. base to emitter voltage base to emitter voltage, v be (v) collector current, i c (ma) typical performance curves (t a = 25 c) dc current gain, h fe dc current gain vs. collector current collector current, i c (ma) feedback capacitance vs. collector to base voltage gain bandwidth product vs. collector current feddback capacitance, c re (pf) collector to base voltage, v cb (v) collector current, i c (ma) gain bandwidth product, f t (ghz) upa811t 200 100 0 50 100 150 2 elements in total per element free air 25 20 15 10 5 0 0.5 1.0 160 a 140 a 120 a 100 a 80 a 60 a 40 a l b =20 a 20 10 0 0.5 1.0 v ce = 3 v 200 100 50 20 10 0.5 5 150 10 v ce = 3 v 5.0 2.0 1.0 0.5 0.2 0.1 15 250 10 20 f = 1 mhz 10 8 6 4 2 0 0.5 5 150 10 vce = 3 v f = 2 ghz
collector current, l c (ma) ) b d ( f n , e r u g i f e s i o n insertion power gain vs. frequency s i , n i a g r e w o p n o i t r e s n i e 1 2 i 2 ) b d ( insertion power gain vs. collector current noise figure vs. collector current frequency, f (ghz) typical performance curves (t a = 25 c) exclusive north american agent for rf, microwave & optoelectronic semiconductors california eastern laboratories ? headquarters ? 4590 patrick henry drive ? santa clara, ca 95054-1817 ? (408) 988-3500 ? telex 34-6393 ? fax (408) 988-0279 24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ? internet: http://www.cel.com printed in usa on recycled paper -1/99 data subject to change without notice part number quantity packaging upa811t-t1-a 3000 tape & reel ordering information upa811t collector current, l c (ma) s i , n i a g r e w o p n o i t r e s n i e 1 2 i 2 ) b d ( 12 8 4 0 5 5 . 0 0 5 1 10 vce = 3 v f = 2 ghz 20 15 10 25 5 0 0.1 0.5 0 . 5 0 . 2 2 . 0 1.0 v ce = 3 v lc = 5 ma 4 3 2 5 1 0 5 5 . 0 0 5 1 10 v ce = 3 v f = 2 ghz
|
