h sms - 0001 schottky barrier chip ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso900 1:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 1 of 1 revised 06/20 13 abstract t hese schottky chips are designed for hybrid applications at dc through k - band frequencies. the passivated planar construction o f these schottky chips provides a wide temperature range capability combined with broad bandwidth performance. a variety of chi ps are provided which are optimized for various analog and digital applications. typical applications of schottky chips are mixing, detecting, switching, gating, sampling, and wave shaping. hsms - 0001 is specifically designed for analog and digital hybrid applications requiring thermosonic or thermocompression bonding technique s. the large bonding pad and offset junction allows easy bonding. the top metallization is a layer of gold deposited on adhesive metal layers for a tarnish - free surface that allows either thermosonic or thermocompression bonding techniques. the b ottom meta llization is also gold, suitable for epoxy or extectic die attach methods. mechanical specifications maximum ratings and electrical characteristics @ ta = 25c unless otherwise specified features ? t hermocompression / thermosonically bondable ? gold metallization ? silicon nitride passivation ? uniform electrical characteristics ? batch matched versions available ? planar construction ? ideal for hybr i d integrated circuits a b c d e mm 1/1000 inch a 0.10 4 b 0.080 3.5 c 0.27 10.6 d 0.27 10.6 e 0.13 5 n otes: 1. dimension tolerance 0.03 (1). 2. top contact is anode . 3. all contact metallization is gold. description value / range unit junction operating and storage tem perat ure - 65 to +200 c power dissipation @ t a = 25c m easured in an infinite heat sink derated linearly to zero at maximum rated temperature 250 mw i f max (1 s pulse) operation in excess of any one of these conditions may result in permanent damage 1 a description ab r. value / range unit test condition minimum breakdown voltage v br 70 v i r = 10a maximum forward voltage v f 410 mv i f = 1ma maximum forward voltage v f 1.0 v @ i f 15 mv maximum capacitance c t 1.72 pf v r = 0v, f = 1.0mhz maximum reverse leakage current i r 200 na @ v r 50 v a
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