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| SI3948DV vishay siliconix new product document number: 70969 s-61828erev. a, 23-aug-99 www.vishay.com faxback 408-970-5600 2-1 dual n-channel 30-v (d-s) mosfet v ds (v) r ds(on) ( ) i d (a) 30 0.105 @ v gs = 10 v 2.5 30 0.175 @ v gs = 4.5 v 2.0 tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm d2 g2 s1 s2 d1 g1 d 1 g 1 s 1 n-channel mosfet d 2 g 2 s 2 n-channel mosfet parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a, b t a = 25 c i d 2.5 a continuous drain current (t j = 150 c) a , b t a = 70 c i d 2.0 a pulsed drain current (10 s pulse width) i dm 8 a continuous source current (diode conduction) a, b i s 1.05 maximum power dissipation a, b t a = 25 c p d 1.15 w maximum power dissipation a , b t a = 70 c p d 0.73 w operating junction and storage temperature range t j , t stg 55 to 150 c parameter symbol typical maximum unit maximum junction - to - ambient a t 5 sec r thja 93 110 c/w m ax i mum j unc ti on- t o- a m bi en t a steady state r thja 130 150 c/w maximum junction-to-lead steady state r thjl 75 90 notes a. surface mounted on fr4 board. b. t 5 sec. SI3948DV vishay siliconix new product www.vishay.com faxback 408-970-5600 2-2 document number: 70969 s-61828erev. a, 23-aug-99 parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 5 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 2.5 a 0.0085 0.105 drain - source on - state resistance a r ds( on ) v gs = 4.5 v, i d = 2.0 a 0.140 0.175 forward transconductance a g fs v ds = 10 v, i d = 2.5 a 4.3 s diode forward voltage a v sd i s = 1.05 a, v gs = 0 v 0.81 1.1 v dynamic b total gate charge q g v15vv50vi18a 2.1 3.2 c gate-source charge q gs v ds = 15 v, v gs = 5.0 v, i d = 1.8 a 0.7 nc gate-drain charge q gd 0.7 turn-on delay time t d(on) v15vr15 7 11 rise time t r v dd = 15 v, r l = 15 i 1 a v 10 v r 6 9 14 turn-off delay time t d(off) dd , l i d 1 a, v gen = 10 v, r g = 6 13 20 ns fall time t f 5 8 source-drain reverse recovery time t rr i f = 1.05 a, di/dt = 100 a/ s 35 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. SI3948DV vishay siliconix new product document number: 70969 s-61828erev. a, 23-aug-99 www.vishay.com faxback 408-970-5600 2-3 on-resistance ( 0 2 4 6 8 10 0123456 0 2 4 6 8 10 012345 0 2 4 6 8 10 01234 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 25 0 25 50 75 100 125 150 0 0.05 0.10 0.15 0.20 0.25 01234567 0 50 100 150 200 250 300 0 5 10 15 20 25 30 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs = 10 thru 5 v v gs gate-to-source voltage (v) drain current (a) i d 25 c t c = 55 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 10 v v gs = 4.5 v 4 v 3 v 125 c v ds = 15 v i d = 1.8 a v gs = 10 v i d = 2.5 a 2v SI3948DV vishay siliconix new product www.vishay.com faxback 408-970-5600 2-4 document number: 70969 s-61828erev. a, 23-aug-99 0.01 0 1 6 8 2 4 10 30 0.1 power (w) single pulse power, junction-to-ambient time (sec) 0.8 0.6 0.4 0.2 0.0 0.2 0.4 50 25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.2 0 0.08 0.16 0.24 0.32 0.40 0246810 0.1 1 10 i d = 2.5 a 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c threshold voltage variance (v) v gs(th) t j temperature ( c) source-drain diode forward voltage on-resistance vs. gate-to-source voltage on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 3 10 2 1 10 600 10 1 10 4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 130 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm i d = 2 a SI3948DV vishay siliconix new product document number: 70969 s-61828erev. a, 23-aug-99 www.vishay.com faxback 408-970-5600 2-5 10 3 10 2 110 10 1 10 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance |
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