unisonic technologies co., ltd 6n70k-mt power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r502-b02.d 6.0a, 700v n-channel power mosfet ? description the utc 6n70k-mt is an n-channel mode power mosfet using utc?s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate charge and low input capacitance. the utc 6n70k-mt is universally applied in high efficiency switch mode power supply. ? features * r ds(on) <1.60 ? @ v gs =10v, i d = 3 a * high switching speed ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 6n70kl-tf3-t 6n70kg-tf3-t to-220f g d s tube 6n70kl-tf1-t 6n70kg-tf1-t to-220f1 g d s tube 6n70kl-tf2-t 6N70KG-TF2-T to-220f2 g d s tube 6n70kl-tf3t-t 6n70kg-tf3t-t to-220f3 g d s tube 6n70kl-tm3-t 6n70kg-tm3-t to-251 g d s tube 6n70kl-tms-t 6n70kg-tms-t to-251s g d s tube 6n70kl-tms2-t 6n70kg-tms2-t to-251s2 g d s tube 6n70kl-tms4-t 6n70kg-tms4-t to-251s4 g d s tube 6n70kl-tn3-r 6n70kg-tn3-r to-252 g d s tape reel 6n70kl-tnd-r 6n70kg-tnd-r to-252d g d s tape reel note: pin assignment: g: gate d: drain s: source
6n70k-mt power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-b02.d ? marking
6n70k-mt power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-b02.d ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage (note 2) v gss 30 v t c =25c 6 a continuous t c =100c i d 3.8 a drain current pulsed i dm 24 a avalanche current (note 2) i ar 6 a single pulsed (note 3) e as 284 mj avalanche energy repetitive (note 2) e ar 13 mj peak diode recovery dv/dt (note 4) dv/dt 2.5 v/ns to-220f 40 to-220f1/to-220f2 to-220f3 42 power dissipation to-251/to-251s to-251s2/to-251s4 to-252/to-252d p d 55 w to-220f 0.32 to-220f1/to-220f2 to-220f3 0.336 linear derarting factor to-251/to-251s to-251s2/to-251s4 to-252/to-252d p d 0.44 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. l = 15.77mh, i as = 6a, v dd = 50v, r g = 27 ? , starting t j = 25c 4. i sd 6a, di/dt 140a/s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit to-220f/to-220f1 to-220f2/to-220f3 62.5 junction to ambient to-251/to-251s to-251s2/to-251s4 to-252/to-252d ja 110 /w to-220f 3.1 to-220f1/to-220f2 to-220f3 2.9 junction to case to-251/to-251s to-251s2/to-251s4 to-252/to-252d jc 2.27 /w
6n70k-mt power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-b02.d ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 700 v breakdown voltage temperature coefficient ? bv dss / ? t j i d =250a 0.79 v/c v ds =700v 25 a drain-source leakage current i dss v ds =560v, t c =125c 250 a forward v gs =+30v, v ds =0v +100 na gate-source leakage current reverse i gss v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =3a (note 1) 1.35 1.60 ? dynamic parameters input capacitance c iss 480 600 pf output capacitance c oss 80 100 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz (note 1, 2) 6.5 25 pf switching parameters turn-on delay time t d(on) 57 80 ns rise time t r 60 85 ns turn-off delay time t d(off) 130 140 ns fall-time t f v dd =30v, i d =0.5a, r g =25 ? 54 60 ns total gate charge q g 21.8 32 nc gate to source charge q gs 6.8 nc gate to drain charge q gd v gs =10v, v ds =50v, i d =1.3a (note 1, 2) 4.8 nc source- drain diode ratings and characteristics maximum body-diode continuous current i s 6 a maximum body-diode pulsed current (note 3) i sm integral reverse pn-diode in the mosfet 24 a drain-source diode forward voltage (note 2) v sd i s =6a, v gs =0v, t j = 25c 1.4 v notes: 1. pulse test: pulse width 250s, duty cycle 2% 2. essentially independent of operating temperature 3. repetitive rating: pulse width limit ed by maximum junction temperature
6n70k-mt power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-b02.d ? test circuits and waveforms 50k ? 300nf dut v ds 12v v gs 200nf same type as dut 3ma gate charge test circuit gate charge waveforms v gs dut r g v ds r d 10v v ds v gs 90% 10% t d(on) t r t f t d(off) t on t off resistive switching test circuit resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms
6n70k-mt power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-b02.d ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
6n70k-mt power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-b02.d ? typical characteristics drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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