powerdi is a registered tr ademark of diodes incorporated. dm nh10h028s ps q document number: ds 38226 rev. 1 - 2 1 of 7 www.diodes.com november 2015 ? diodes incorporated dm nh10h028s ps q 100v 175c n - channel enhancement mode mosfet powerdi ? product summary v (br)dss r ds(on) i d t c = + 25c 100 v 28 m? @ v gs = 10 v 40 a description and applications this mosfet is designed to meet the stringent requirements of automotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? engine management systems ? body control electronics ? dc - dc converters features ? thermally efficient package - cooler running applications ? high conversion efficiency ? low r ds( on ) C minimizes on state losses ? low input capacitance ? fast switching speed ? <1.1mm package profile C ideal for t hin applications ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen an d antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap c apable (note 4) mechanical data ? case: powerdi ? 5060 - 8 ? case material: molded plastic, Dgreen molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram below ? terminals: finish C matte tin a nnealed over copper l eadframe solderable per mil - std - 202, method 208 ? weight: 0.097 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm n h 10 h 0 28s ps q - 13 powerdi ? 5060 - 8 2500 / tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . automotive products are aec - q101 qualified and are ppap capable. for more information, please refer to http://www.diodes.com/product_compliance_definitions.html . 5 . for packaging details, go to our website at http://www.diodes.com /products/packages.html . marking information bottom view t op view pin configuration top view internal schematic powerdi ? 5060 - 8 pin1 s d d g d d s s =manufacturer d s g green s d s s g d d d yyww h1h28ss
powerdi is a registered tr ademark of diodes incorporated. dm nh10h028s ps q document number: ds 38226 rev. 1 - 2 2 of 7 www.diodes.com november 2015 ? diodes incorporated dm nh10h028s ps q maximum ratings (@ t c = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 100 v gate - source voltage v gss 20 v continuous drain current , v gs = 10 v steady state t c = +25c t c = + 10 0c i d 40 25 a pulsed drain curren t ( 10 dm 54 a maximum continuous body diode f orward current (note 7 ) i s 3.9 a avalanche current (note 9 ) l=0.1 mh i as 26 a avalanche energy (note 9 ) l= 0.1 mh e as 35 mj thermal characteristics characteristic symbol value unit total power dissipation (note 6 ) p d 1.6 w thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 9 7 c/w total power dissipation (note 7 ) p d 2.9 w thermal resistance, junction to ambient (note 7 ) s teady state r ? ja 5 2 c/w thermal resistance, junction to case r ? j c 1.8 operating and storage temperature range t j, t stg - 55 to +1 75 c electrical characteristics (@ t c = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 100 gs = 0v, i d = 250 a zero gate voltage drain current i dss ds = 10 0 v, v gs = 0v gate - source leakage i gss gs = ? ds = 0v on characteristics (note 8 ) gate threshold voltage v gs (th) 2 .0 2.5 4 .0 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? gs = 10 v, i d = 20 a diode forward voltage v sd 1. 2 v v gs = 0v, i s = 1.0 a dynamic characteristics (note 9 ) input capacitance c iss ds = 50 v, v gs = 0v f = 1 .0 mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 10 v ) q g ? d d = 50 v, i d = 20 a total gate charge ( v gs = 6.0 v ) q g gs gd d( on ) gs = 10 v, v d s = 50v, r g = 3.0 ? d = 20 a turn - on rise time t r d( off ) f rr f = 20 a, di/dt = 10 0a/ s reverse recovery charge q rr f = 20 a, di/dt = 10 0a/ s notes: 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
powerdi is a registered tr ademark of diodes incorporated. dm nh10h028s ps q document number: ds 38226 rev. 1 - 2 3 of 7 www.diodes.com november 2015 ? diodes incorporated dm nh10h028s ps q 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs =3.5v v gs =4.0v v gs =4.5v v gs =5.0v v gs =6.0v v gs =8.0v v gs =10.0v 0 5 10 15 20 25 30 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds =5v - 55 25 85 175 150 125 0.014 0.016 0.018 0.02 0.022 0.024 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? ) i d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =10.0v 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =20a 0 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature v gs =10v - 55 25 85 125 150 175 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ( ) figure 6. on - resistance variation with temperature v gs =10v, i d =10a v gs =10v, i d =20a
powerdi is a registered tr ademark of diodes incorporated. dm nh10h028s ps q document number: ds 38226 rev. 1 - 2 4 of 7 www.diodes.com november 2015 ? diodes incorporated dm nh10h028s ps q 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance ( ? j , junction temperature ( gs =10v, i d =10a v gs =10v, i d =20a 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 - 50 - 25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d =250 a i d =1ma 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t a = - 55 v gs =0v, t a =25 v gs =0v, t a =85 v gs =0v, t a =125 v gs =0v, t a =150 v gs =0v, t a =175 10 100 1000 10000 0 10 20 30 40 50 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 v gs (v) qg (nc) figure 11. gate charge v ds =50v, i d = 20a 0.01 0.1 1 10 100 0.1 1 10 100 1000 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area tj,(max)=1 75 gs = 10 v r ds(on) limited p w =1 0 s t j(max) = 1 75 c =25 gs = 10 v r ds(on) limited dc p w =1s p w =100ms p w =10ms p w =1ms
powerdi is a registered tr ademark of diodes incorporated. dm nh10h028s ps q document number: ds 38226 rev. 1 - 2 5 of 7 www.diodes.com november 2015 ? diodes incorporated dm nh10h028s ps q 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec ) figure 13. transient thermal resistance r ja (t)=r(t) * r ja r ja =97 c /w duty cycle, d=t1 / t2 d=0.9 d=0.7 d=0.5 d=0.3 d=0.1 d=0.05 d=0.02 d=0.01 d=0.005 d=single pulse
powerdi is a registered tr ademark of diodes incorporated. dm nh10h028s ps q document number: ds 38226 rev. 1 - 2 6 of 7 www.diodes.com november 2015 ? diodes incorporated dm nh10h028s ps q package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. powerdi ? 5060 - 8 powerdi ? 5060 - 8 dim min max typ a 0.90 1.10 1.00 a1 0.00 0.05 ? ? b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 d 5.15 bsc d1 4.70 5.10 4.90 d2 3.70 4.10 3.90 d3 3.90 4.30 4.10 e 6.15 bsc e1 5.60 6.00 5.80 e2 3.28 3.68 3.48 e3 3.99 4.39 4.19 e 1.27 bsc g 0.51 0.71 0.61 k 0.51 ? ? ? ? l 0.51 0.71 0.61 l1 0.100 0.200 0.175 m 3.235 4.035 3.635 m1 1.00 1.40 1.21 10o 12o 11o 1 6o 8o 7o all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. powerdi ? 5060 - 8 dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 4.100 x2 0.755 x 3 4.420 x 4 5.610 y 1.270 y1 0.600 y2 1. 020 y3 0.295 y 4 1. 825 y5 3.810 y6 0.180 y7 6.610 d1 e1 a l k m l1 d2 g e2 detail a 0(4x) a1 c e d e 1 detail a b (8x) e/2 1 01 (4x) m1 b2 (4x) b3 (4x) e3 d3 y7 x3 y2 y5 x1 g1 x c y(4x) g x2 y3 y4 y6 x4 y1
powerdi is a registered tr ademark of diodes incorporated. dm nh10h028s ps q document number: ds 38226 rev. 1 - 2 7 of 7 www.diodes.com november 2015 ? diodes incorporated dm nh10h028s ps q important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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