amplifiers - l ine a r & p ower - chip 1 HMC999 v01.0112 gan mmic 10 watt power amplifier, 0.01 - 10 ghz general description features functional diagram the hm c999 is a ga n hem t mmi c distributed p ower amplifer which operates between 0.01 and 10 g h z. the amplifer provides 11 db of gain, 47 dbm output ip 3 and 38 dbm of output power at 1 db gain compression while requiring 1100 ma from a +48 v supply. the hm c999 amplifer provides 10 w atts of saturated power in a chip area only 7 mm 2 , equating to a power density of 1.5 w /mm 2 over 3 decades of bandwidth. all data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). h igh p 1db o utput p ower: 38 dbm h igh p sat o utput p ower: 40 dbm h igh o utput ip 3: 47 dbm h igh gain: 11 db s upply voltage: +28v, +40v or +48v @ 1100 ma 50 o hm m atched i nput/ o utput die s ize: 3.66 x 1.91 x 0.1 mm typical applications the hm c999 is ideal for: ? test instrumentation ? military communications ? jammers and decoys ? radar, ew & ecm subsystems ? space electrical specifcations, t a = +25c [2] , vdd = +48 v, vgg2 = +22 v, idd = 1100 ma* [1] p arameter m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. units f requency r ange 0.01 - 2 2 - 6 6 - 10 g hz gain 10.5 12.5 9 11 8.5 10.5 db gain f latness 0.8 0.4 0.7 db gain variation o ver temperature 0.017 0.02 0.025 db/ c i nput r eturn l oss 20 18 15 db o utput r eturn l oss 13 15 14 db o utput p ower for 1 db compression ( p 1db) 36.5 38.5 36 38 34.5 36.5 dbm s aturated o utput p ower ( p sat) 40.5 40 39.5 dbm o utput third o rder i ntercept ( ip 3) 48 47 45.5 dbm s upply current ( i dd) (vdd = 48v, vgg = 22v typ.) 110 0 110 0 110 0 ma * adjust vgg1 between -5 to 0 v to achieve idd = 1100 ma typical. [1] s parameter and oip3 data taken at idd=1000ma [2] probe station chuck temperature adjusted to bring backside of die to +25 c products and product information are subject to change without notice. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 2 HMC999 v01.0112 gan mmic 10 watt power amplifier, 0.01 - 10 ghz output return loss vs. temperature @ vdd = 48v, idd = 1000 ma gain & return loss @ vdd = 48v, idd = 1000 ma gain vs. temperature @ vdd = 48v, idd = 1000 ma low frequency gain & return loss @ vdd = 48v, idd = 1000 ma input return loss vs. temperature @ vdd =48v, idd = 1000 ma -30 -20 -10 0 10 20 0 2 4 6 8 10 12 14 s21 s11 s22 response (db) frequency (ghz) 6 8 10 12 14 16 012345678910 +25c +85c gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 012345678910 +25c +85c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 012345678910 +25c +85c return loss (db) frequency (ghz) -30 -20 -10 0 10 20 0.001 0.01 0.1 1 10 s21 s11 s22 response (db) frequency (ghz) gain & return loss @ vdd = 40v, idd = 1000 ma -30 -20 -10 0 10 20 0 2 4 6 8 10 12 14 s21 s11 s22 response (db) frequency (ghz) products and product information are subject to change without notice. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 3 HMC999 v01.0112 gan mmic 10 watt power amplifier, 0.01 - 10 ghz psat vs. temperature p1db vs. temperature p1db vs. supply voltage 25 30 35 40 45 50 012345678910 +25c +85c p1db (dbm) frequency (ghz) 25 30 35 40 45 50 012345678910 +28v +40v +48v p1db (dbm) frequency (ghz) 25 30 35 40 45 50 012345678910 +25c +85c psat (dbm) frequency (ghz) gain & return loss @ vdd = 28v, idd = 1000 ma -30 -20 -10 0 10 20 0 2 4 6 8 10 12 14 s21 s11 s22 response (db) frequency (ghz) gain vs. supply current @ vdd = 48v 6 8 10 12 14 16 012345678910 500 ma 600 ma 700 ma 800 ma 900 ma 1000 ma gain (db) frequency (ghz) gain vs. supply voltage @ idd = 1000 ma 6 8 10 12 14 16 012345678910 +48v +40v +28v gain (db) frequency (ghz) products and product information are subject to change without notice. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 4 HMC999 v01.0112 gan mmic 10 watt power amplifier, 0.01 - 10 ghz psat vs. supply current psat vs. supply voltage p1db vs. supply current output ip3 @ pout = 26 dbm / tone 25 30 35 40 45 50 012345678910 +28v +40v +48v psat (dbm) frequency (ghz) 25 30 35 40 45 50 012345678910 600 ma 700 ma 800 ma 900 ma 1000 ma 1100 ma p1db (dbm) frequency (ghz) 25 30 35 40 45 50 012345678910 600 ma 700 ma 800 ma 900 ma 1000 ma 1100 ma psat (dbm) frequency (ghz) 30 35 40 45 50 55 60 012345678910 25c frequency (ghz) ip3 (dbm) output im3 @ vdd = +48v 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 26 28 30 32 34 2 ghz 4 ghz 6 ghz 8 ghz im3 (dbc) pout/tone (dbm) products and product information are subject to change without notice. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 5 HMC999 v01.0112 gan mmic 10 watt power amplifier, 0.01 - 10 ghz power dissipation power compression @ 4 ghz reverse isolation vs. temperature -70 -60 -50 -40 -30 -20 -10 0 012345678910 +25c +85c reverse isolation (db) frequency (ghz) 0 5 10 15 20 25 30 35 40 45 0 200 400 600 800 1000 1200 1400 1600 1800 0 4 8 12 16 20 24 28 32 idd pout gain pae pout(dbm), gain(db), pae(%) idd (ma) input power (dbm) 40 44 48 52 56 60 0 4 8 12 16 20 24 28 32 4 ghz 8 ghz power dissipation (w) input power (dbm) products and product information are subject to change without notice. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 6 HMC999 v01.0112 gan mmic 10 watt power amplifier, 0.01 - 10 ghz second harmonics vs. idd @ pout = +26 dbm, vdd = 48v second harmonics vs. vdd @ pout = +26 dbm, idd = 1100 ma second harmonics vs. pout vdd = 48v & vgg = 22v & idd = 1100 ma absolute maximum ratings drain bias voltage (vdd) 56v gate bias voltage (vgg1) -5 to 0v gate bias voltage (vgg2) 6v to (vdd - 8v) rf i nput p ower @ f in < 0.2g h z ( rfin ) 28 dbm rf i nput p ower @ f in > 0.2g h z ( rfin ) 36 dbm channel temperature 225 c continuous p diss (t= 85 c) (derate 729 m w /c above 85 c) 102 w thermal r esistance [1] 1.37 c/ w o utput p ower into v swr > 7:1 40 dbm s torage temperature -65 to 150 c o perating temperature -55 to 85 c ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions vdd (v) i dd (ma) 28 110 0 40 110 0 48 110 0 typical supply current vs. vdd 0 10 20 30 40 50 60 70 024681012 +14 dbm +18 dbm +22 dbm +26 dbm +30 dbm second harmonic (dbc) frequency(ghz) second harmonics vs. temperature vdd = 48v & vgg = 22v & idd = 1100 ma pout = 26 dbm 0 10 20 30 40 50 60 70 024681012 +25c +85c second harmonic (dbc) frequency(ghz) 0 10 20 30 40 50 60 70 024681012 800ma 900ma 1000ma 1100ma second harmonic (dbc) frequency(ghz) 0 10 20 30 40 50 60 70 024681012 +48v +40v +28v second harmonic (dbc) frequency(ghz) [1] includes 0.5 mil thick thermally conductive epoxy layer. epoxy thermal conductivity = 60 w/mc products and product information are subject to change without notice. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 7 HMC999 v01.0112 gan mmic 10 watt power amplifier, 0.01 - 10 ghz outline drawing no t es : 1. a ll d imensions in in c hes [ millime t ers ] 2. d ie t hi ck ness is 0.004 (0.100) 3. ty pi ca l b on d p ad is 0.004 (0.100) s qua re 4. b on d p ad me ta li zat ion : g ol d 5. back si d e me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d 7. no c onne ct ion re qu ire d for u nl ab ele d b on d p ad s 8. o v er a ll d ie si z e is .002 die packaging information [1] s tandard alternate g p -1 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. products and product information are subject to change without notice. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 8 HMC999 v01.0112 gan mmic 10 watt power amplifier, 0.01 - 10 ghz p ad n umber f unction description i nterface s chematic 1 rfin this pad is dc coupled and matched to 50 o hms. e xternal blocking capacitor is required 2, 6 vgg2 gate control 2 for amplifer. attach bypass capacitor per application circuit herein. f or nomiinal operation +22v should be applied to either pad 2 or pad 6. 3, 4 agc1, agc2 l ow frequency termination. attach bypass capacitor per application circuit herein. 5 rfo ut & vdd rf output for amplifer. connect dc bias (vdd) network to provide drain current i dd). s ee application circuit herein. 7, 8 vgg1 gate control 1 for amplifer. attach bypass capacitor per application circuit herein. p lease follow mmi c amplifer biasing p rocedure application note. this voltage may be applied to either pad 7 or pad 8. die bottom gnd die bottom must be connected to rf /dc ground pad descriptions products and product information are subject to change without notice. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 9 HMC999 v01.0112 gan mmic 10 watt power amplifier, 0.01 - 10 ghz application circuit note 1: drain bias (vdd) must be applied through a broadband bias tee with low series resistance and capable of providing ~1800 ma assembly diagram products and product information are subject to change without notice. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 10 HMC999 v01.0112 gan mmic 10 watt power amplifier, 0.01 - 10 ghz mounting & bonding techniques for millimeterwave gan mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick copper tungsten heat spreader which is then attached to the thermally conductive ground plane ( f igure 2). m icrostrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with two 1 mil wires are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.1 02mm (0.004?) thic k gan mmic wi re bond rf gr ound plane 0.1 27mm (0.005?) thic k alumina thin f ilm substrat e 0.07 6mm (0.003?) f igur e 1. 0.1 02mm (0.004?) thic k gan mmic wi re bond rf gr ound plane 0.254mm (0.0 1 0?) thic k alumina thin f ilm substrat e 0.07 6mm (0.003?) f igur e 2. 0.1 50mm (0.005?) thic k c opper t ungst en products and product information are subject to change without notice. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
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