symbol ? ordering information pin assi g n me n t 1 2 3 packing nj 8 n 8 0 - li t o - 22 0 nj 8 n 8 0 - b l t o - 22 0 nj 8 n 8 0 f - l i g d s t ube note: pin assignment: g: gate d: drain s: source package o r d e r i ng n u m b er g d s t a p e b o x g d s b u l k 8 . 0 a 8 0 0 v n - c h a n n e l p o we r m o s f e t nj 8 n 8 0 p o we r m o s fe t t o -2 2 0 f ? description the nj 8n80 is an n-channel mode power mosfet, it uses advanced technology to provide costumers planar stripe and dmos technology. this technology allows a minimum on-state resistance, superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the NJ8N80 is generally applied in high efficiency switch mode power supplies. ypically 35 nc low gate charge ? features * v ds = 8 00v id = 8.0a * * r d s (on) = 1 . 45 ? @ v gs = 10v. * typically 13 pf low crss * improved dv/dt capability * f a st s w itch i n g cap a bi l i t y * aval a n che e n e r g y s pe c ified * rohs?compliant product to - 220 f 1 to - 220 1
3 3 3 3 3 3 33 3 3 3 3 3 333 ? absolute maxim u m ratin g s ( t c =25c, unless othe r w i s e specified) parameter symbol ratings unit drain-source voltage v dss 800 v gate-source voltage v gss 30 v drain current (continuous) (t c =25c) i d 8 a drain current (pulsed) (note 1) i dm 32 a avalanche current (note 1) i ar 8 a single pulse avalanche energy (note 2) e as 850 mj repetitive avalanche energy (note 1) e ar 17.8 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns power dissipation to-220 p d 178 w linear derating factor above t c =25c to-220 1.43 w/c junction temperature t j +150 c storage temperature t stg -55 3 ~ 3 +150 c note: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 25mh, i as = 8a, v dd = 50v, r g = 25 ? , starting t j = 25c 3. i sd ? 8a, di/dt ? 200a/s, v dd ? bv dss , starting t j = 25c 4. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case to-220 jc 0.7 c/w to-220f 2. 1 NJ8N80 power mosfet to-220f 0 . 47 to-220f 5 9
3 3 3 3 33 333 3 3 3 3 333 ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 800 v breakdown voltage temperature coefficient ? bv dss / ? t j reference to 25c, i d =250a 0.5 v/c drain-source leakage current i dss v ds =800v, v gs =0v 10 a v ds =640v, t c =125c 100 gate- source leakage current i gss v gs =30v, v ds =0v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3.0 5.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =4a 1.18 1.45 ? forward transconductance (note 1) g fs v ds =50v, i d =4a 5.6 s dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 1580 2050 p f output capacitance c oss 135 175 pf reverse transfer capacitance c rss 13 17 pf switching parameters (note 1, note 2) total gate charge q g v gs =10v, v ds =640v, i d =8a 35 45 nc gate to source charge q gs 10 nc gate to drain charge q gd 14 nc turn-on delay time t d ( on ) v dd =400v, i d =8a, r g =25 ? 40 90 ns rise time t r 110 230 ns turn-off delay time t d ( off ) 65 140 ns fall-time t f 70 150 ns source- drain diode ratings and characteristics maximum continuous drain-source diode forward current i s 8 a maximum pulsed drain-source diode forward current i sm 32 a drain-source diode forward voltage v sd i s =8a, v gs =0v 1.4 v reverse recovery time (note 1) t r r i s =8a, v gs =0v, di f /dt=100a/s 690 ns reverse recovery charge (note 1) q rr 8.2 c note: 1. pulse test: pulse width ? 300s, duty cycle ? 2% 2. essentially independent of operating temperature NJ8N80 power mosfet
3 3 3 3 33 333 3 3 3 3 333 ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/dt test circuit & waveforms same type as dut i sd v gs l v gs (driver ) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver NJ8N80 power mosfet
3 3 3 3 33 333 3 3 3 3 333 ? test circuits and waveforms(cont.) 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g v gs v gs 200nf same type as dut 3ma gate charge test circuit gate charge waveforms resistive switching test circuit resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms NJ8N80 power mosfet
3 3 3 3 33 333 3 3 3 3 333 ? typical characteristics drain current,i d (a) drain current, i d (a) drain current,i d (a) drain current,i d (a) NJ8N80 power mosfet
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