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  features 1 of 7 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. rf mems sga3563z dc to 5000mhz, cascadable sige hbt mmic amplifier the sga3563z is a high performance sige hbt mmic amplifier. a darlington con- figuration featuring one-micron emitters provides high f t and excellent thermal per- formance. the heterojunction increases breakdown voltage and minimizes leakage current between junctions. cancellation of emitter junction non-linearities results in higher suppression of intermodulation prod ucts. only two dc-blocking capacitors, a bias resistor, and an optional rf choke are required for operation. 0 32 gain & return loss vs. frequency v d = 3.25v, i d = 35ma (typ.) -10 24 gain 20 16 o ss (db) d b) irl - 20 16 return l o gain ( d orl -30 8 -40 0 012345 fre q uenc y ( ghz ) ? high gain: 25.5db at 850mhz ? cascadable 50 ?? gain block ? high output ip 3 : 24.5dbm typ. at 1950mhz ? low noise figure: 2.7db typ. at 1950mhz ? low current draw: 35ma typ. ? single voltage supply opera- tion applications ? pa driver amplifier ? cellular, pcs, gsm, umts ? if amplifier ? wireless data, satellite ds111011 ? package: sot-363 sga3563zdc to 5000mhz, cascadable sige hbt mmic ampli- fier parameter specification unit condition min. typ. max. small signal gain 23.5 25.5 27.5 db 850mhz 19.5 21.5 23.5 db 1950mhz 20.0 db 2400mhz output power at 1db compression 13.0 dbm 850mhz 11.0 12.5 dbm 1950mhz output third intercept point 24.0 dbm 850mhz 22.5 24.5 dbm 1950mhz bandwidth determined by return loss 5000 mhz >10db input return loss 11.2 15.5 db 1950mhz output return loss 11.2 20.0 db 1950mhz noise figure 2.7 3.7 db 1950mhz device operating voltage 3.0 3.25 3.5 v device operating current 31 35 39 ma thermal resistance (junction - lead) 255 c/w test conditions: i d =35ma typ., t l =25c, z s =z l =50 ??? p out per tone=-5dbm, oip 3 tone spacing = 1 mhz
2 of 7 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sga3563z typical performance at key operating frequencies absolute maximum ratings parameter rating unit max device current (i d )70ma max device voltage (v d )6v max rf input power +18 dbm max junction temp (t j )+150c operating temp range (t l ) -40 to +85 c max storage temp +150 c esd rating - human body model (hbm) class 1a moisture sensitivity level (msl) msl 1 operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l parameter unit 100 mhz 500 mhz 850 mhz 1950 mhz 2400 mhz 3500 mhz small signal gain db 28.5 27.5 25.5 21.5 20.0 17.0 output third order intercept point dbm 24.0 23.6 24.0 24.5 24.0 22.0 output power at 1db compression dbm 13.0 13.0 13.0 12.5 12.0 10.0 input return loss db 29.7 17.6 15.6 15.5 17.2 14.7 output return loss db 31.8 31.1 33.6 20.0 17.9 15.0 reverse isolation db 29.4 29.3 28.6 25.5 23.9 21.3 noise figure db 2.3 2.3 2.3 2.7 test conditions: i d =35ma typ., oip 3 tone spacing=1mhz, p out per tone=-5dbm, r bias =100 ? , t l =25c, z s =z l =50 ? caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder.
3 of 7 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sga3563z oip 3 vs. frequency i d = 35 ma (typ.) 15 20 25 30 00.511.522.533.5 frequency (ghz) oip 3 (dbm) t lead =+25oc p 1db vs. frequency i d = 35 ma (typ.) 0 5 10 15 00.511.522.533.5 frequency (ghz) p 1db (dbm) t lead =+25oc 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 frequency (ghz) noise figure (db) noise figure vs. frequency i d = 35 ma (typ.) t lead =+25oc
4 of 7 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sga3563z typical rf performance over lead temperatur e -- bias: id= 35 ma (typ.) at tlead = +25oc | s 11 | vs. frequency | s 21 | vs. frequency | s 12 | vs. frequency | s 22 | vs. frequency 0 8 16 24 32 0123456 frequency (ghz) s 21 (db) -40c 25c +85c -40 -30 -20 -10 0 0123456 frequency (ghz) s 11 (db) -40c +25c +85c -40 -30 -20 -10 0 0123456 frequency (ghz) s 22 (db) -40c +25c +85c -40 -30 -20 -10 0 0123456 frequency (ghz) s 12 (db) -40c +25c +85c
5 of 7 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sga3563z suggested pad layout package drawing dimensions in inches (millimeters) refer to drawing posted at www.rfmd.com for tolerances. pin function description 3rf in rf input pin. this pin requires the use of an external dc-blocking capacitor chosen for the frequency of operation. 1, 2, 4, 5 gnd connection to ground. for optimum rf performance, use via holes as close to ground leads as possible to reduce lead inductance. 6rf out/bias rf output and bias pin. dc voltage is present on this pin, therefor a dc-blocking capacitor is necessary for proper opera- tion. sot -363 pcb pad layout dimensions in inches [millimeters] rf out rf i n notes: 1. provide a large ground pad area under device pins 1, 2, 4, & 5 with many plated via holes as shown. 2. dimensions given for 50 ohm rf i/o lines are for 31 mil thick getek. scale accordingly for different board thicknesses and dielectric contants. 3. we recommend 1 or 2 ounce copper. measure- ments for this data sheet were made on a 31 mil thick getek with 1 ounce copper on both sides.
6 of 7 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sga3563z application schematic evaluation board layout rf in rf out 1 uf c b c b c d v s r bias l c 3 4,5 6 1,2 1000 pf sga3563z r ldc bias inductor v d i d recommended bias resistance for i d = 35 ma supply voltage (v s ) (volts) < 5 56789 1 0 bias resistance* (ohms) n/r 50 79 107 136 164 193 * bias resistance = r bias + r ldc = ( v s -v d ) / i d select r bias so that r bias + r ldc ~ the recommended bias resistance. use 1% or 5 % tolerance resisistors or parallel combinations to attain the recommended bias resistance +/- 3%. r bias provides current stability over temperature. * n/r=not recommended. contact sirenza technical support for guidance when available supply voltage is less than 5 volts. application circuit element values reference designator frequency (mhz) 100 500 850 1950 2400 3500 c b 1000 pf 220 pf 100 pf 68 pf 56 pf 39 pf c d 100 pf 100 pf 68 pf 22 pf 22 pf 15 pf l c 470 nh 68 nh 33 nh 22 nh 18 nh 15 nh
7 of 7 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sga3563z part identification ordering information ordering code description sga3563z 7" reel with 3000 pieces sga3563zsq sample bag with 25 pieces sga3563zsr 7? reel with 100 pieces SGA3563ZPCK1 850mhz, 5v operation pcba with 5-piece sample bag 1 2 3 6 5 4


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