sigc15t60 s edited by in fineon technologies ai ps dd cls , l7551d , edition 2 , 26 . 01.2005 igbt 3 chip this chip is used for: power module discrete components features: 6 00v trench & field stop technology low v ce(sat) low turn - off losses short tail current positive temperature coefficient easy paralleling applications: drives white good s resonant applications g c e chip type v ce i cn die size package ordering code sigc15 t 6 0 s 6 00v 3 0 a 3.92 x 3.88 mm 2 sawn on foil q67050 - a4393 - a101 mechanical parameter: raster size 3.92 x 3. 88 emitter pad size 3.154 x 3.154 gate pad size 0.608 x 1 .083 mm 2 area total / active 15 .2 / 10.7 mm 2 thickness 70 m wafer size 150 mm flat position 0 deg max. possible chips per wafer 890 pcs passivation frontside p hotoimide emitter metallization 3200 nm alsicu collector metallization 1400 nm ni ag ? sys tem suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, <500m reject ink d ot s ize ? 0.65mm ; max 1.2mm recommended s torage e nvironment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
sigc15t60 s edited by in fineon technologies ai ps dd cls , l7551d , edition 2 , 26 . 01.2005 maximum ratings : parameter symbol value unit collector - emitter voltage , t j =25 c v ce 600 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 9 0 a gate emitter voltage v ge 20 v operating junction and storage temperature t j , t stg - 40 ... +1 75 c sc data, v ge = 15 v , v cc = 360v, tvj = 150 c t p 5 s 1 ) depending on thermal properties of assembly static characteristics (tested on chip) , t j =25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit collec tor - emitter breakdown voltage v (br)ces v ge =0v , i c = 2 ma 600 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =3 0 a 1. 5 2.05 gate - emitter threshold voltage v ge(th) i c =430 a , v ge =v ce 4.1 4.9 5.7 v zero gate voltage collector current i ces v ce = 6 00v , v ge =0v 1.6 a gate - emitter leakage current i ges v ce =0v , v ge =2 0v 3 00 na integrated gate resistor r gint none w electrical characteristics ( verified by design/characterization ): value parameter symbol conditions min. typ. max. unit in put capacitance c iss 1630 output capacitance c oss 108 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz 50 p f switching characteristics ( verified by design/characterization ), i nductive l oad value 2) parameter symbol conditions min. typ. max. unit turn - on delay time t d(on) 24 rise time t r 26 turn - off delay time t d(off) 292 fall time t f t j =17 5 c v cc =4 00v, i c =3 0 a, v ge = 0 /15v, r g = 10.6 w 90 n s 2 ) values also influenced by parasitic l - and c - in measurement and pa ckage.
sigc15t60 s edited by in fineon technologies ai ps dd cls , l7551d , edition 2 , 26 . 01.2005 chip drawing:
sigc15t60 s edited by in fineon technologies ai ps dd cls , l7551d , edition 2 , 26 . 01.2005 further electrical characteristics: this chip data sheet refers to the device data sheet ikw30n60t description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensi tive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2004 all rights reserved. attention please! the informa tion herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of n on - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest inf ineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact you r nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or prot ect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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