jiejie microelectronics co.,ltd tel +86 - 513 - 83639777 - 1 / 3 - http://www.jjwdz.com jmc 1 5 0 - 16 /18/20 description : 1 ) chip : double mesa scrs of reverse blocking high - voltage 2) chip area: 1 4.6m m1 3.1 mm (central gate thyristor) 3) technology : mesa glass passivation technology , multilayer metallization t echnology and non - void welding by vac uum welding technology typical application: reactive power compensation , solid state relay , power module, etc. absolute maximum ratings ( packaged into modules, unless otherwise specified, t c =25 ) parameter test conditions symbol value s unit operating junction temperature range t j - 40 - 125 repetitive peak off - state voltage t j =25 v drm 1600/1800/2000 v repetitive peak reverse voltage t j =25 v rrm 1600/1800/2000 v average on - state current t c =80 i t ( av) 150 a peak on - state surge current t p= 1 0m s i tsm 3300 a i 2 t value for fusing tp=10m s i 2 t 54450 a 2 s critical rate of rise of on - state current v d =2/3v drm t p= 200 s i g =0.3a t j =125 di g /dt=0.3a/ s di/dt 150 a/ s electrical characteristics ( pack aged into modules, unless otherwise specified, t c =25 ) parameter test conditions symbol value s unit peak on - state voltage i t = 470 a tp=380 s v tm 1.8 v r epetitive peak off - state current v d =v d rm t c =25 t c =1 25 i d rm1 i d rm2 100 25 a m a r epetitive peak reverse current v r =v r rm t c =25 t c =1 25 i rrm1 i rrm2 100 25 a m a triggering gate current v d =12v r l = 30 i gt 20 - 150 m a l atching current i g = 1.2 i g t i l 300 ma holding current i t = 1a i h 250 ma triggering gate voltage v d =12v r l = 30 v gt 2 v
jiejie microelectronics co.,ltd tel +86 - 513 - 83639777 - 2 / 3 - http://www.jjwdz.com non trigge ring gate voltage v d =v drm t j =1 25 v gd 0. 25 v critical rate of rise of voltage v d =2/3v drm t j =1 25 gate ope n dv/dt 1000 v/ s m echanical c haracteristi c s module size 15.8 mm 14.4 mm module thickness 1.6 mm w elding area of cathode electrode 12.86 mm 11. 36 mm w elding area of control electrode 1.5mm symbol working conditions 1) no severe mechanical shock as impact and drop off in the process of transportation, storage and working of product. 2) storage conditions te mperature: 5~40 relative humidity: 45% storage time: 3 days for the open package ; 3 months for the closed package 3) w elding conditions recommended solder component: sn63sb37 (or lead - free solder of liquid quadrant less than 240 ) recommended sol dering conditions: shown in table 1 4) welding in the gate spot is recommended to be completed one - time by using fixture . if it is necessary to use a soldering iron , the temperature of soldering iron is controlled within 280 and time is controlled within 20s. k g a
jiejie microelectronics co.,ltd tel +86 - 513 - 83639777 - 3 / 3 - http://www.jjwdz.com table 1 sn63sb37 soldering conditions average heating rate 3 /s (max) preheating activation low limit of temperature t s (min) 100 upper limit of temperature t s (max) 150 t ime (min ~ max) t s 60 ~ 90s reflow zone m elting point t emperature t l 183 (sn63sb37) peak temperature t p 240 (+0/ - 5 ) reflow time t p (peak temperature 5 ) 10 30s m elting time t l 40 60s maximum cooling rate 3.5 /s recommended process time 300 ~ 360s orderi ng information 100 200 150 250 sn63pb37 t p t l ts(max) ts(min) t s t l 6 0-90s (40 -60s) t p (10 -30s) j m c 1 5 0 - 1 6 j i e j i e m i c r o e l e c t r o n i c s c o . , l t d m o d u l e o f s e r i e s i t ( a v ) = 1 5 0 a 1 6 : v d r m / v r r m 1 6 0 0 v 1 8 : v d r m / v r r m 1 8 0 0 v 2 0 : v d r m / v r r m 2 0 0 0 v c : c e n t r a l g a t e
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