MIXA50PM650TMI tentative phase leg with multi level xpt igbt module u n e1 g1 e2 g2 e3 g3 e4 g4 th1 th2 part number MIXA50PM650TMI backside: isolated c25 ce(sat) v v 1,6 ces 75 650 = v = v i = a 2x features / advantages: applications: package: high level of integration rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 3x ic thin wafer technology combined with the xpt design results in a competitive low vce(sat) temperature sense included sonic? diode - fast and soft reverse recovery - low operating forward voltage ac motro control ac servo and robot drives ups solar inverter minipack2b compatible to easy2b package pins for pressfit connection with dcb base isolation voltage: v~ 3000 ixys reserves the right to change limits, condition s and dimensions. 20150810 data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MIXA50PM650TMI tentative -di /dt = a/s t = c v ces v 650 collector emitter voltage collector emitter saturation voltage t = 25c collector current a 75 a c vj symbol definition ratings typ. max. min. conditions unit 50 v v ce(sat) total power dissipation 188 w collector emitter leakage current 5,5 v turn-on delay time 70 ns t reverse bias safe operating area a v ges v 20 v gem max. transient gate emitter voltage t = c c v p tot gate emitter threshold voltage rbsoa 100 30 t = c t = c vj v max. dc gate voltage i c25 i c t = 25c vj i = a; v = 15 v c ge t = 25c vj v ge(th) i ces i = ma; v = v c ge ce v = v ; v = 0 v ce ces ge i ges t = 25c vj gate emitter leakage current v = 20 v ge 1,8 1,9 4,8 4 ma 0,1 ma 0,1 500 g(on) total gate charge v = v; v = 15 v; i = a ce q ge c 70 nc tt t e e d(on) r d(off) f on off 50 ns 100 ns 40 ns 1,2 mj 1,7 mj current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load v = v; i = a v = 15 v; r = ? ce c ge g v = 15 v; r = ? ge g v = v cema 650 short circuit safe operating area s scsoa 10 t = c vj v = v; v = 15 v ce ge short circuit duration t short circuit current i sc sc r = ? ; non-repetitive g 200 a r thjc thermal resistance junction to case 0,8 k/w v rrm v 650 max. repetitive reverse voltage t = 25c vj t = 25c forward current a 55 a c 40 t = c c i f25 i f t = 25c forward voltage v 2,00 v vj 1,80 t = 125c vj v f i = a f t = 25c reverse current ma 0,1 ma vj 0,5 t = 125c vj i r r rrm t = 125c vj qi t rr rm rr 4,5 c 45 a 150 ns reverse recovery charge max. reverse recovery current reverse recovery time v = i = a; v = 0 v f f ge e rec 1 mj reverse recovery energy r r thjc thermal resistance junction to case 1,2 k/w v = v t = 25c c t = 25c vj t = c vj vj 50 0,8 50 50 50 50 15 15 15 300 360 900 300 i cm 1,6 r thch thermal resistance case to heatsink 0,27 k/w r thch thermal resistance case to heatsink 0,4 k/w igbt diode 300 v v = v cema 650 80 80 80 80 125 125 125 125 125 na ixys reserves the right to change limits, condition s and dimensions. 20150810 data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MIXA50PM650TMI tentative t vjm max. virtual junction temperature c 175 ratings xxxxxxxxxxx logo part number date code 2d data matrix location yywwx i x m a 50 pm 650 t mi part description igbt xpt igbt gen 1 / std phase leg with multi level thermistor \ temperature sensor minipack2b module = = = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 2,2 mounting torque 2 t vj c 150 virtual junction temperature -40 weight g 39 symbol definition typ. max. min. conditions operation temperature unit v v t = 1 second v t = 1 minute isolation voltage mm mm 6,3 5,0 11,5 10,0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current a per terminal 125 -40 terminal to terminal minipack2b delivery mode quantity code no. ordering number marking on product ordering 0 25 50 75 100 125 150 10 2 10 3 10 4 10 5 r [ ] typ. ntc resistance vs. temperature t c [c] 50/60 hz, rms; i 1 ma isol MIXA50PM650TMI 512023 box 20 MIXA50PM650TMI standard r pin-chip resistance pin to chip 6 m ? 3000 isol v = v cesat + 2 r i c resp. v = v f + 2 r i f t stg c 125 storage temperature -40 2500 threshold voltage v m ? v 0 max r 0 max slope resistance * 1,1 21 1,2 18 equivalent circuits for simulation t = vj i v 0 r 0 igbt diode 150 c * on die level t = 25 resistance k ? 5,25 k vj 3375 r 25 b 25/50 5 4,75 temperature coefficient symbol definition typ. max. min. conditions unit temperature sensor ntc ixys reserves the right to change limits, condition s and dimensions. 20150810 data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
MIXA50PM650TMI tentative pin positions with tolerance ? 0.4 32 28.8 25.6 16 12.8 6.4 3.2 3.2 9.6 12.8 16 19.2 22.4 25.6 28.8 32 38.4 41.6 44.8 48 g3 t1 t2 e4 g4 nn n n n n g1 e1 e2 g2 u u u u u u u u e3' 56.7 0.3 22.7 0.5 16.4 0.2 2.3 -0.1 x 8.5 +0.3 48 0.3 53 0.1 62.8 0.5 42 0.15 51 0.1 16.4 0.5 1.4 0.5 12 0.35 u n e1 g1 e2 g2 e3 g3 e4 g4 th1 th2 outlines minipack2b ixys reserves the right to change limits, condition s and dimensions. 20150810 data according to iec 60747and per semiconductor un less otherwise specified ? 2015 ixys all rights reserved
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