? semiconductor components industries, llc, 2014 april, 2014 ? rev. 1 1 publication order number: nvtfs4c25n/d nvtfs4c25n power mosfet 30 v, 17 m , 22 a, single n?channel, 8fl features ? low r ds(on) to minimize conduction losses ? low capacitance to minimize driver losses ? optimized gate charge to minimize switching losses ? nvtfs4c25nwf ? w ettable flanks product ? nvt prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain?to?source v oltage v dss 30 v gate?to?source v oltage v gs 20 v continuous drain current r ja (notes 1, 3, 5) steady state t a = 25 c i d 10.1 a t a = 85 c 7.8 power dissipation r ja (notes 1, 3, 5) t a = 25 c p d 3.0 w t a = 85 c 1.8 continuous drain current r jc (notes 1, 2, 4, 5) steady state t c = 25 c i d 22.1 a t c = 85 c 17.1 power dissipation r jc (notes 1, 2, 4, 5) t c = 25 c p d 14.3 w t c = 85 c 8.6 pulsed drain current t a = 25 c, t p = 10 s i dm 90 a operating junction and storage temperature t j , t stg ?55 to +175 c source current (body diode) i s 14 a single pulse drain?to?source avalanche energy (t j = 25 c, i l = 6.7 a pk , l = 0.5 mh) e as 11.2 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. the entire application environment impacts the thermal resistance values shown; they are not constants and are valid for the specific conditions noted. 2. psi ( ) is used as required per jesd51?12 for packages in which substantially less than 100% of the heat flows to a single case surface. 3. surface?mounted on fr4 board using 650 mm 2 , 2 oz. cu pad. 4. assumes heat?sink sufficiently large to maintain constant case temperature independent of device power. 5. continuous dc current rating. maximum current for pulses as long as one second is higher but dependent on pulse duration and duty cycle. http://onsemi.com v (br)dss r ds(on) max i d max 30 v 17 m @ 10 v 22 a n?channel mosfet d (5?8) s (1,2,3) g (4) wdfn8 ( 8fl) case 511ab marking diagram 26.5 m @ 4.5 v (note: microdot may be in either location) 1 xxxx = specific device code a = assembly location y = year ww = work week = pb?free package 1 xxxx ayww d d d d s s s g see detailed ordering and shipping information on page 6 o f this data sheet. ordering information
nvtfs4c25n http://onsemi.com 2 thermal resistance maximum ratings parameter symbol value unit junction?to?case (drain) (notes 6, 7 and 9) jc 10.5 c/w junction?to?ambient ? steady state (notes 6 and 8) r ja 50 6. the entire application environment impacts the thermal resistance values shown; they are not constants and are valid for the specific conditions noted. 7. psi ( ) is used as required per jesd51?12 for packages in which substantially less than 100% of the heat flows to a single case surfa ce. 8. surface?mounted on fr4 board using 650 mm 2 , 2 oz. cu pad. 9. assumes heat?sink sufficiently large to maintain constant case temperature independent of device power. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain?to?source breakdown voltage temperature coefficient v (br)dss / t j 15.3 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1.0 a t j = 125 c 10 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 10) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.3 2.2 v threshold temperature coefficient v gs(th) /t j ?4.5 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v i d = 10 a 13 17 m v gs = 4.5 v i d = 9 a 21 26.5 forward transconductance g fs v ds = 1.5 v, i d = 15 a 23 s gate resistance r g t a = 25 c 1.0 charges and capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 15 v 500 pf output capacitance c oss 295 reverse transfer capacitance c rss 85 capacitance ratio c rss /c iss v gs = 0 v, v ds = 15 v, f = 1 mhz 0.170 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v; i d = 20 a 5.1 nc threshold gate charge q g(th) 0.9 gate?to?source charge q gs 1.7 gate?to?drain charge q gd 2.7 gate plateau voltage v gp 3.3 v total gate charge q g(tot) v gs = 10 v, v ds = 15 v; i d = 20 a 10.3 nc switching characteristics (note 11) turn?on delay time t d(on) v gs = 4.5 v, v ds = 15 v, i d = 10 a, r g = 3.0 8.0 ns rise time t r 32 turn?off delay time t d(off) 10 fall time t f 3.0 turn?on delay time t d(on) v gs = 10 v, v ds = 15 v, i d = 15 a, r g = 3.0 4.0 ns rise time t r 25 turn?off delay time t d(off) 13 fall time t f 2.0 10. pulse test: pulse width 300 s, duty cycle 2%. 11. switching characteristics are independent of operating junction temperatures.
nvtfs4c25n http://onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise specified) parameter unit max typ min test condition symbol drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 a t j = 25 c 0.87 1.2 v t j = 125 c 0.75 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 30 a 18.2 ns charge time t a 9.8 discharge time t b 8.4 reverse recovery charge q rr 5.7 nc 10. pulse test: pulse width 300 s, duty cycle 2%. 11. switching characteristics are independent of operating junction temperatures.
nvtfs4c25n http://onsemi.com 4 typical characteristics 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 ?50 ?25 0 25 50 75 100 125 150 175 3.4 v 3.6 v figure 1. on?region characteristics figure 2. transfer characteristics v ds , drain?to?source voltage (v) v gs , gate?t o?source voltage (v) 5 2 1 0 0 5 10 30 4.0 3.5 3.0 2.0 1.5 1.0 figure 3. on?resistance vs. v gs figure 4. on?resistance vs. drain current and gate voltage v gs , gate?t o?source voltage (v) i d , drain current (a) 9.0 8.0 7.0 10 6.0 5.0 4.0 3.0 0.002 0.012 50 30 40 20 0.015 0.005 figure 5. on?resistance variation with temperature figure 6. drain?to?source leakage current vs. voltage t j , junction temperature ( c) v ds , drain?to?source voltage (v) 30 25 20 15 10 5 1 100 1000 10000 i d , drain current (a) i d , drain current (a) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance (normalized) i dss , leakage (na) 4.0 v 3.2 v 3.0 v 2.8 v 4.5 v to 10 v t j = 25 c v ds = 5 v t j = 25 c t j = 125 c t j = ?55 c 0.022 0.035 i d = 30 a v gs = 4.5 v t j = 25 c v gs = 10 v i d = 10 a v gs = 10 v v gs = 0 v t j = 85 c t j = 150 c t j = 125 c 2.5 0.032 0.042 35 10 3.8 v 3 0 20 30 40 10 5.0 0.5 0 0.052 4.5 15 25 0.025 0.045 4 40 20 4.2 v 10
nvtfs4c25n http://onsemi.com 5 typical characteristics figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge v ds , drain?to?source voltage (v) q g , total gate charge (nc) 25 20 15 10 30 5 0 0 200 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source?to?drain voltage (v) 100 10 1 1 10 100 0.9 0.8 0.7 0.6 0.5 0.4 0 2 6 10 figure 11. maximum rated forward biased safe operating area v ds , drain?to?source voltage (v) 100 10 1 0.1 0.1 1 10 c, capacitance (pf) v gs , gate?t o?source voltage (v) t, time (ns) i s , source current (a) i d , drain current (a) v gs = 0 v t j = 25 c c iss c oss c rss q t v dd = 15 v i d = 15 a v gs = 10 v t d(on) t r t f t j = 25 c t j = 125 c v gs = 0 v nvtfs4c25n fbsoa t c = 25 c, v gs = 10 v dc 500 100 300 400 1.0 0 2 046812 t j = 25 c v dd = 15 v v gs = 10 v i d = 20 a 12 16 20 0.01 ms 10 2 600 700 100 800 6 8 10 4 q gs q gd t d(off) 0.1 4 8 14 18 0.1 ms 1 ms 10 ms
nvtfs4c25n http://onsemi.com 6 typical characteristics figure 12. thermal response pulse time (sec) 0.01 0.001 0.0001 0.00001 0.000001 0.1 1 10 100 r(t) ( c/w) 0.1 1 10 100 1000 figure 13. g fs vs. i d i d (a) 20 15 5 0 0 5 30 g fs (s) 10 25 15 30 20 25 40 figure 14. avalanche characteristics pulse width (seconds) 1.e?03 1.e?04 1.e?06 1 10 100 i d , drain current (a) 1.e?05 t j(initial) = 85 c 10 35 @ 1% duty cycle @ 2% duty cycle @ 5% duty cycle @ 10% duty cycle @ 20% duty cycle @ 50 % duty cycle r ja single pulse r ja single pulse jc , infinite heat sink assumption ja , 650 mm2, 2 oz cu pad, single layer on fr4 t j(initial) = 25 c ordering information device marking package shipping ? nvtfs4c25ntag 4v25 wdfn8 (pb?free) 1500 / tape & reel NVTFS4C25NWFTAG 25wf wdfn8 (pb?free) 1500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
nvtfs4c25n http://onsemi.com 7 package dimensions wdfn8 3.3x3.3, 0.65p case 511ab issue d m 1.40 1.50 0 ??? 1.60 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994 . 2. controlling dimension: millimeters. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 5 6 top view side view bottom view d1 e1 d e b a 0.20 c 0.20 c 2x 2x dim min nom millimeters a 0.70 0.75 a1 0.00 ??? b 0.23 0.30 c 0.15 0.20 d d1 2.95 3.05 d2 1.98 2.11 e e1 2.95 3.05 e2 1.47 1.60 e 0.65 bsc g 0.30 0.41 k 0.65 0.80 l 0.30 0.43 l1 0.06 0.13 a 0.10 c 0.10 c detail a 14 8 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 e 6x c 4x c seating plane 5 max 0.80 0.05 0.40 0.25 3.15 2.24 3.15 1.73 0.51 0.95 0.56 0.20 m *for additional information on our pb?free strategy and solderin g details, please download the on semiconductor soldering an d mounting techniques reference manual, solderrm/d. soldering footprint* 0.65 0.42 0.75 2.30 3.46 package 8x 0.055 0.059 0 ??? 0.063 12 0.028 0.030 0.000 ??? 0.009 0.012 0.006 0.008 0.116 0.120 0.078 0.083 0.116 0.120 0.058 0.063 0.026 bsc 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 0.037 0.022 0.008 min nom inches max 7 8 pitch 3.60 0.57 0.47 outline dimension: millimeters 3.30 bsc 3.30 bsc 0.130 bsc 0.130 bsc 2.37 0.66 4x e3 0.23 0.30 0.40 0.009 0.012 0.016 e3 4x on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nvtfs4c25n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
|
