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| 1 of 8 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt ldmos rfga2054 ingap hbt mmic amplifier 50mhz to 3000mhz the rfga2054 is a high performance ingap hbt mmic amplifier. the rfga2054's internal active bias circuitry allows the amplifier to operate directly from a 5v supply and provides stable current over temperat ure and process beta variation. this dar- lington amplifier is internally matched to 50 ? making it ideal for applications requiring small footprints and minimal external components. features ? low cost ? broadband gain ? internally matched ? internal active bias ? no dropping resistor ? single supply 5v operation ? hbm esd level >1000v applications ? pa driver amplifier ? lo buffer amplifier ? cellular, pcs, gsm, umts, lte, td-scdma ? wideband instrumentation ? wireless data, satellite terminals ds111213 ? package: sot-89 rfga2054 ingap hbt mmic ampli- fier rfga2054sr 7? sample reel with 100 pieces rfga2054sq sample bag with 25 pieces RFGA2054TR7 7? reel with 750 pieces rfga2054tr13 13? reel with 2500 pieces rfga2054pck-410 500mhz to 3000mhz pcba with 5-piece sample bag
2 of 8 rfga2054 ds111213 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit supply voltage (v cc )6.0v device current (i cc ) 130 ma cw input power, 50 ? output vswr 15 dbm cw input power, 10:1 output vswr 10 dbm operating junction temperature (t j )150 c operating temperature range (t l )-40 to +85 c storage temperature -55 to +150 c esd rating - human body model 1c (1000v) moisture sensitivity level msl-2 notes: 1. the maximum rating must all be met simultaneously. 2. p diss = p dc + p rfin - p rfout . 3. t j = t l + p diss * r th . parameter specification unit condition min. typ. max. linear operation typical performance at 25c using the standard sample evb with r2 = open. this design is for linear operation only. input power (p in ) 3.0 dbm max recommended continuous input power, v cc < 5.0v, load vswr < 2:1; r2 = open gain 20.3 db 850mhz 17.3 18.8 20.3 db 2140mhz 18.4 db 2650mhz oip3 33.5 dbm 850mhz (0dbm/tone, 1mhz spacing) 28 30.5 dbm 2140mhz (0dbm/tone, 1mhz spacing) 29.0 dbm 2650mhz (0dbm/tone, 1mhz spacing) p1db 20.3 dbm 850mhz 18.5 20.0 dbm 2140mhz 19.5 dbm 2650mhz input return loss 13 db 2140mhz output return loss 13.5 db isolation 23 db noise figure 3.6 db operating current (quiescent) 68 78 ma at v cc = 5.0v operating voltage (v cc ) 5.0 5.25 v max recommended voltage for continuous operation thermal resistance (r th ) 135 c/w at quiescent current, no rf, v cc = 5.0v saturated operation typical performance at 25c using the input pull-down resistor (r2 = 5.1 k ? ) to lower quiescent current. see schematic following the "saturated operation plots". input power (p in ) 10 dbm max. recommen ded continuous input power v cc < 5.0v, load vswr < 2:1, r2 = 5.1 k ? saturated output power 20 dbm 850mhz 20.5 dbm 2140mhz 20.7 dbm 2650mhz operating current 90 ma max recommended current for continuous operation operating voltage 5.0 5.25 v max recommended voltage for continuous operation caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder. 3 of 8 rfga2054 ds111213 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance: 500mhz to 3000mhz application circuit (linear operation, r2 = 0pen) -30 -25 -20 -15 -10 -5 0 0.5 1.0 1.5 2.0 2.5 3.0 input return loss (db) frequency (ghz) input return loss versus frequency -40c 25c 85c 14 15 16 17 18 19 20 21 22 23 24 0.5 1.0 1.5 2.0 2.5 3.0 gain (db) frequency (ghz) gain versus frequency -40c 25c 85c -40 -35 -30 -25 -20 -15 -10 -5 0 0.5 1.0 1.5 2.0 2.5 3.0 isolation (db) frequency (ghz) isolation versus frequency -40c 25c 85c -30 -25 -20 -15 -10 -5 0 0.5 1.0 1.5 2.0 2.5 3.0 output return loss (db) frequency (ghz) output return loss versus frequency -40c 25c 85c 26 28 30 32 34 36 38 40 0.5 1.0 1.5 2.0 2.5 3.0 output ip3 (dbm) frequency (ghz) output ip3 versus frequency 25c -40c 85c 15 16 17 18 19 20 21 22 23 24 25 0.5 1.0 1.5 2.0 2.5 3.0 p1db (dbm) frequency (ghz) p1db versus frequency 25c -40c 85c 4 of 8 rfga2054 ds111213 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance: 500mhz to 3000mhz application circuit (linear operation, r2 = 0pen) 0 1 2 3 4 5 6 7 0.5 1.0 1.5 2.0 2.5 3.0 noise figure (db) frequency (ghz) noise figure versus frequency 25c 85c 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 current (ma) voltage (v) current versus voltage 25c -40c 85c p out and current versus input power (850mhz) ! " ! " ! " " " " p out and current versus input power (2140mhz) ! " ! " ! " " " " p out and current versus input power (2650mhz) ! " ! " ! " " " " 50 60 70 80 90 100 110 0.5 1.0 1.5 2.0 2.5 3.0 current (ma) frequency (ghz) large signal current versus frequency (25 c, 50 ) input power = -1dbm input power = +2dbm input power = +5dbm 5 of 8 rfga2054 ds111213 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board schematic 500mhz to 3000mhz application circuit for linear operation evaluation board bill of materials (bom) 500mhz to 3000mhz application circuit description reference designator manufacturer manufacturer?s p/n ga2054 evaluation board ga2054-410(a) cap, 1 ? f, 20%, 25v, tant-a c1 avx corporation taja105m025 cap, 1000pf, 10%, 50v, x7r, 0402 c4, c6, c7 taiyo yuden (usa), inc. rm umk105bj102kv-f cap, 100pf, 5%, 50v, c0g, 0402 c5 taiyo yuden (usa), inc. rm umk105cg101jv-f ind, 82nh, 10%, w/w, 0805 l1 coilcraft, inc. 0805cs-820xkbc conn, sma, end lnch, flt, 0.062" j1-j2 johnson components, inc. 142-0701-821 conn, hdr, st, plrzd, 2-pin, 0.100" p1 itw pancon mpss100-2-c ingap darlington hbt gain block u1 rfmd ga2054 do not place c2-c3, r1-r2 6 of 8 rfga2054 ds111213 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board assembly drawing note: r2 not shown. for saturated operation mount r2 shunt to gnd between c6 and pin 1. pin names and descriptions pin name description 1rf in rf input. external dc block is required. 2gnd dc and rf ground 3rf out/vcc rf output, device collector 4gnd dc and rf ground. must be soldered to evb ground plane over a bed of vias for thermal and rf perfor- mance. 7 of 8 rfga2054 ds111213 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance under saturated operation, r2 = 5.1 k ? evaluation board schematic for saturated operation p out and current versus input power (850mhz) ! " ! " ! " " " " p out and current versus input power (2140mhz) ! " ! " ! " " " " p out and current versus input power (2650mhz) ! " ! " ! " " " " p out and current versus input power (85 c) ! #$% ! #$% ! #$% #$% #$% #$% 8 of 8 rfga2054 ds111213 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . branding diagram package drawing dimensions in millimeters [inches] refer to drawing posted at www.rfmd.com for tolerances. |
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