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absolute maximum ratings parameter units i d @ v gs = -4.5v, t c = 25c continuous drain current -0.53 i d @ v gs = -4.5v, t c = 100c continuous drain current -0.33 i dm pulsed drain current -2.12 p d @ t c = 25c max. power dissipation 0.57 w linear derating factor 0.0045 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 33.5 mj i ar avalanche current -0.53 a e ar repetitive avalanche energy 0.06 mj dv/dt peak diode recovery dv/dt -4.4 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (for 5s) weight 43 (typical) mg c a www.irf.com 1 for footnotes refer to the last page features : 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed light weight complimentary p-channel available - irhlub770z4, irhlubn770z4 irhlubc770z4 & irhlubcn770z4 international rectifiers r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl controlcircuits to power devices in space and other radiation environments. the threshold voltage remains within acceptable operating limits over the full operating temperature and postradiation. this is achieved while maintaining single event gate rupture and single event burnout immunity. these devices are used in applications such as current boost low signal source in pwm, voltage comparator and operational amplifiers. pre-irradiation ub (shielded metal lid) radiation hardened jansr2n7626ublogic level power mosfet 60v, p-channel surface mount (ub) ref: mil-prf-19500/745 technology irhlub7970z4 part number radiation level r ds(on) i d qpl part number irhlub7970z4 100k rads (si) 1.4 ? -0.53a jansr2n7626ub irhlub7930z4 300k rads (si) 1.4 ? -0.53a jansf2n7626ub product summaryrefer to page 11 for 3 additional part numbers - irhlubn7970z4, irhlubc7970z4, irhlubcn7970z4 pd-94764l downloaded from: http:///
2 www.irf.com pre-irradiation irhlub7970z4, jansr2n7626ub source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) -0.53 i sm pulse source current (body diode) -2.12 v sd diode forward voltage -5.0 v t j = 25c, i s = -0.53a, v gs = 0v t rr reverse recovery time 50 ns t j = 25c, i f = -0.53a, di/dt -100a/ s q rr reverse recovery charge 25 nc v dd -25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page thermal resistance parameter min typ max units t est conditions r thja junction-to-ambient 220 c/w note: corresponding spice and saber models are available on international rectifier web site. electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -60 v v gs = 0v, i d = -250 a ? bv dss / ? t j temperature coefficient of breakdown -0.055 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 1.40 ? v gs = -4.5v, i d = -0.33a resistance v gs(th) gate threshold voltage -1.0 -2.0 v v ds = v gs , i d = -250 a ? v gs(th) / ? t j gate threshold voltage coefficient 3.1 mv/c g fs forward transconductance 0.23 s v ds = -10v, i ds = 0.33a i dss zero gate voltage drain current -1.0 v ds = -48v ,v gs =0v -10 v ds = -48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward -100 v gs = -10v i gss gate-to-source leakage reverse 100 v gs = 10v q g total gate charge 3.6 v gs = -4.5v, i d = -0.53a q gs gate-to-source charge 1.5 nc v ds = -30v q gd gate-to-drain (miller) charge 1.8 t d (on) turn-on delay time 22 v dd = -30v, i d = -0.53a, t r rise time 22 v gs = -5.0v, r g = 24 ? t d (off) turn-off delay time 27 t f fall time 27 l s + l d total inductance 8.4 ciss input capacitance 167 v gs = 0v, v ds = -25v c oss output capacitance 43 pf f = 100khz c rss reverse transfer capacitance 10 na nh ns a measured from the center of drain pad to center of source pad r g gate resistance ? f = 1.0mhz, open drain 56 downloaded from: http:///
www.irf.com 3 irhlub7970z4, jansr2n7626ub pre-irradiation international rectifier radiation hardened mosfets are tested to verify their radiation hardness capabil-ity. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. typical single event effect, safe operating area table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage -60 v v gs = 0v, i d = -250a v gs(th) gate threshold voltage -1.0 -2.0 v gs = v ds , i d = -250a i gss gate-to-source leakage forward -100 na v gs = -10v i gss gate-to-source leakage reverse 100 v gs = 10v i dss zero gate voltage drain current -1.0 a v ds = -48v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-39) 1.36 ? v gs = -4.5v, i d = -0.33a r ds(on) static drain-to-source on-state v sd diode forward voltage -5.0 v v gs = 0v, i d = -0.53a resistance (ub) 1.40 ? v gs = -4.5v, i d = -0.33a 1. part numbers irhlub7970z4, irhlub7930z4 and additional part numbers listed on page 11. radiation characteristics -70 -60 -50 -40 -30 -20 -10 0 01234567 bias vgs (v) bias vds (v) let=38 5% let=62 5% let=85 5% table 2. typical single event effect safe operating area let ener g y ran g ev d s ( v ) ( mev/ ( m g /cm 2 )) ( mev ) ( m ) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v 2v 4v 5v 6v 7v 38 5% 300 7.5% 38 7.5% -60 -60 -60 -60 -60 -50 62 5% 355 7.5% 33 7.5% -60 -60 -60 -60 -60 - 85 5% 380 7.5% 29 7.5% -60 -60 -60 -60 - - downloaded from: http:///
4 www.irf.com pre-irradiation irhlub7970z4, jansr2n7626ub fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c - 2.25v vgs top -10v -5.0v -4.5v -3.5v -3.0v -2.75v -2.50v bottom -2.25v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c - 2.25v vgs top -10v -5.0v -4.5v -3.5v -3.0v -2.75v -2.50v bottom -2.25v 1.5 2.0 2.5 3.0 3.5 4.0 -v gs , gate-to-source voltage (v) 0.1 1.0 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = -25v 60 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.4 0.8 1.2 1.6 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = -4.5v i d = -0.53a downloaded from: http:///
www.irf.com 5 irhlub7970z4, jansr2n7626ub pre-irradiation fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature 2 3 4 5 6 7 8 9 10 11 12 -v gs, gate -to -source voltage (v) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -0.53a t j = 25c t j = 150c 0 0.5 1.0 1.5 2.0 2.5 -i d , drain current (a) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 150c vgs = -4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 55 60 65 70 75 - v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = -1.0ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -50a i d = -250a i d = -1.0ma i d = -150ma downloaded from: http:///
6 www.irf.com pre-irradiation irhlub7970z4, jansr2n7626ub fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage fig 11. typical source-drain diode forward voltage fig 12. maximum drain current vs. case temperature 1 10 100 0 50 100 150 200 250 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 1 2 3 4 5 6 0 2 4 6 8 10 12 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -0.53a v = -12v ds v = -30v ds v = -48v ds 012345 -v sd , source-to-drain voltage (v) 0.01 0.1 1 10 - i s d , r e v e r s e d r a i n c u r r e n t ( ) v gs = 0v t j = 150c t j = 25c 25 50 75 100 125 150 0.0 0.1 0.2 0.4 0.5 0.6 t , case temperature ( c) -i , drain current (a) c d downloaded from: http:///
www.irf.com 7 irhlub7970z4, jansr2n7626ub pre-irradiation fig 15. maximum effective transient thermal impedance, junction-to-ambient fig 13. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 1 00 s dc 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 80 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -0.53a -0.34a bottom -0.24a 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 downloaded from: http:///
8 www.irf.com pre-irradiation irhlub7970z4, jansr2n7626ub

t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v v gs

d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 %
+ - v gs ! ! downloaded from: http:///
www.irf.com 9 irhlub7970z4, jansr2n7626ub pre-irradiation 3.25 [.128] 2.92 [.115] 2.74 [.108] 2.41 [.095] 1.42 [.056] 1.17 [.046] 3x 0.355 [.014] mi n. 0.56 [.022] 0.96 [.038] 3x 0.61 [.024] 0.41 [.016] 3x 0.99 [.039] 0.89 [.035] 1.81 [.071] 2.01 [.079] 1 2 3 3. dimens ions are s hown in millime t e rs [inches ]. 1. dimens ioning & t ole rancing per as me y14.5m-1994 2. controlling dimens ion: inch. not es: 4. hat ched are as on package de not e met aliz at ion are as . 5. pad as s ignment s : 1 = gat e , 2 = s ource, 3 = drain, 4 = is olat e d me t al lid. 4 me t al l i d case outline and dimensions ub (shielded metal lid connected to 4th pad) 3.25 [.128] 2.92 [.115] 2.74 [.108] 2.41 [.095] 1.42 [.056] 1.17 [.046] 3x 0.355 [.014] min. 0.56 [.022] 0.96 [.038] 3x 0.61 [.024] 0.41 [.016] 3x 0.99 [.039] 0.89 [.035] 1.81 [.071] 2.01 [.079] 1 2 3 3. dimens ions are shown in millimet ers [inches ]. 1. dimens ioning & t olerancing per as me y14.5m-1994 2. controlling dimension: inch. not es : 4. hatched areas on package denote metalization areas. 5. pad as s ignment s : 1 = gat e , 2 = s ource , 3 = drain, 4 = s hie lding conne ct e d t o t he lid. 4 0.30 r re f . [.012 r ref.] 4 0.55 r min. [.022 r min.] me t al l i d case outline and dimensions ubn (isolated metal lid, no 4th pad) downloaded from: http:///
10 www.irf.com pre-irradiation irhlub7970z4, jansr2n7626ub 3.25 [.128] 2.92 [.115] 2.74 [.108] 2.41 [.095] 3x 0.355 [.014] min. 0.56 [.022] 0.96 [.038] 3x 0.61 [.024] 0.41 [.016] 3x 0.99 [.039] 0.89 [.035] 1.81 [.071] 2.01 [.079] 1 2 3 3. dime ns ions are s hown in millime t e rs [inches ]. 1. dime ns ioning & t ole rancing per as me y14.5m-1994 2. cont rolling dimens ion: inch. not es : 4. hatched areas on package denote metalization areas. 5. pad as s ignme nt s : 1 = gat e, 2 = s ource, 3 = drain, 4 = is ol at e d ceramic lid. 4 1.75 [.069] 1.40 [.055] ce r ami c l i d 3.25 [.128] 2.92 [.115] 2.74 [.108] 2.41 [.095] 3x 0.355 [.014] min. 0.56 [.022] 0.96 [.038] 3x 0.61 [.024] 0.41 [.016] 3x 0.99 [.039] 0.89 [.035] 1.81 [.071] 2.01 [.079] 1 2 3 3. dimens ions are s hown in millimet ers [inches ]. 1. dimens ioning & t olerancing pe r as me y14.5m-1994 2. cont rolling dimens ion: inch. not es : 4. hatched areas on package denote metalization areas. 5. pad as s ignment s : 1 = gat e, 2 = s ource, 3 = drain, 4 = s hie lding co nnect e d t o t he lid. 0.30 r ref. [.012 r ref .] 4 0.55 r min. [.022 r min.] 1.75 [.069] 1.40 [.055] 4 ce r ami c l i d case outline and dimensionsubc (shielded ceramic lid connected to 4th pad) case outline and dimensions ubcn (isolated ceramic lid, no 4th pad) downloaded from: http:///
www.irf.com 11 irhlub7970z4, jansr2n7626ub pre-irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. -48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = -25v, starting t j = 25c, l= 238 mh peak i l =- 0.53a, v gs = -10v i sd -0.53a, di/dt -100a/ s, v dd -60v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 09/2010 additional product summaries (continued from page 1 and 3) part number radiation level r ds(on) i d qpl part number irhlubn7970z4 100k rads (si) 1.4 ? -0.53a jansr2n7626ubn irhlubn7930z4 300k rads (si) 1.4 ? -0.53a jansf2n7626ubn ubn (isolated metal lid) product summary part number radiation level r ds(on) i d qpl part number irhlubc7970z4 100k rads (si) 1.4 ? -0.53a jansr2n7626ubc irhlubc7930z4 300k rads (si) 1.4 ? -0.53a jansf2n7626ubc product summary ubc (shielded ceramic lid) ubcn (isolated ceramic lid) part number radiation level r ds(on) i d qpl part number irhlubcn7970z4 100k rads (si) 1.4 ? -0.53a jansr2n7626ubcn irhlubcn7930z4 300k rads (si) 1.4 ? -0.53a jansf2n7626ubcn product summary downloaded from: http:///

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