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  1 datasheet radiation hardened, 2-terminal temperature transducer isl71590seh the isl71590seh is a temperature-to -current transducer possessing two terminals. it has a high impedance current output that allows it to be insensitive to voltage drops across long lines. when provided a differential voltage between 4v and 33v, the device acts as a constant current regulator that generates a current equal to 1a/kelvin (k). the isl71590seh is specified across the -55c to +125c temperature range and with 1.7c accuracy without the need of additional circuitry, and also capable of operating up to +150c. with power requirements as low as 1.5mw (5v at +25c), it is an ideal choice for remote sensing applications as any well-insulated twisted pair cable will allow for proper operation. it can be used in several additional applications including temperature compensation networks, flow rate analysis, anemometry and biasin g proportional to absolute temperature. the high output impedance (>10m ) leaves plenty of room for variations in the power supply voltage. it is electrically durable as it can withstand a forward operating voltage of 33v over the full temperature range both under and without ion beam radiation and a reverse voltage of -40v. the isl71590seh is available in a 2 ld flatpack and die forms. applications ? rf power amplifier bias compensation ?lcd bias compensation ? laser diode bias compensation ? sensor bias and linearization ? data acquisition systems features ? 50krad(si) low dose rate (eldrs) shift . . . . . . . . . . . . . < 1c ? linear output current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1a/k ? wide power supply input range (v+ to v-) . . . . . . . 4v to 33v ? low power consumption . . . . . . . . . . . . . . . . . . 1.5mw at 5v ? high output impedance provides excellent rejection to variations in the supply line ? additional linearization circuitry is not needed for operation ? operating temperature range. . . . . . . . . . . . -55c to +150c ? qml qualified per mil-prf-38535 requirements ?radiation environment - sel/seb let th . . . . . . . . . . . . . . . . . . . 86.4 mev?cm 2 /mg - total dose, high dose rate . . . . . . . . . . . . . . . . . 300krad(si) - total dose, low dose rate . . . . . . . . . . . . . . . . . 50krad(si)* * product capability established by initial characterization. the eh version is acceptance tested on a wafer-by-wafer basis to 50krad(si) at low dose rate. ? electrically screened to smd# 5962-13215 related literature ? an1844 , ?isl71590sehxx evaluation board user?s guide? ? an1895 , ?total dose testing of the isl71590seh radiation hardened temperature sensor? ? an1894 , ?single event effects (see) testing of the isl71590seh temperature sensor? figure 1. typical application figure 2. i out shift vs low/high dose rate radiation 1k +4v to +33v (v+ to v-) v out = 1mv/k t 0.1% + - isl71590seh -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0 25 50 100 125 150 200 250 300 output current delta (a) ldr hdr total dose (krad(si)) june 3, 2016 fn8376.2 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 1-888-468-3774 | copyright intersil americas llc 2013, 2016. all rights reserved intersil (and design) is a trademark owned by intersil corporation or one of its subsidiaries. all other trademarks mentioned are the property of their respective owners.
isl71590seh 2 june 3, 2016 fn8376.2 submit document feedback ordering information ordering / smd number ( note 2 ) part number ( note 1 ) temperature range (c) package (rohs compliant) pkg. dwg. # 5962f1321501vxc isl71590sehvf -55 to +125 2 ld flatpack k2.a 5962f1321501v9a isl71590sehvx -55 to +125 die n/a isl71590sehf/proto -55 to +125 2 ld flatpack k2.a n/a isl71590sehx/sample -55 to +125 die n/a ISL71590SEHMF -55 to +125 2 ld flatpack k2.a isl71590sehev1z evaluation board notes: 1. these intersil pb-free hermetic packaged products employ 100% au plate - e4 termination finish, which is rohs compliant and c ompatible with both snpb and pb-free soldering operations. 2. specifications for rad hard qml devices are controlled by the de fense logistics agency land and maritime (dla). the smd numbe rs listed must be used when ordering. pin configuration isl71590seh (2 ld flatpack) top view pin descriptions isl71590seh (2 ld flatpack) pin name equivalent esd circuit description 1 v+ circuit 1 positive voltage lead range 4v to 33v 2 v- circuit 1 negative voltage lead 1 2 v- v+ v- v+ circuit 1 esd circuit t + -
isl71590seh 3 june 3, 2016 fn8376.2 submit document feedback functional block diagram figure 3. block diagram t + - 1 2 isl71590seh typical applications figure 4. lowest temperatur e sensing scheme. output current is that of the ?coldest? sensor figure 5. average temperatur e sensing scheme. output current is the sum of all sensor currents v s = +14v 1k + isl71590seh - v out = 1mv/k + - + - 0.1% maximum number = (v smin - v outmax )/4v t t t v s = +12v + - + - + - v out = (i o1 +i o2 -- +i on ) . r e.g., with 4 sensors and r = 250 v out = 1mv/k) 1 r n where n = number of isl71590seh 2 t t t n
isl71590seh 4 june 3, 2016 fn8376.2 submit document feedback absolute maximum rating s thermal information maximum supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40v in-beam maximum supply voltage ( note 5 ) . . . . . . . . . . . . . . . . . . . . . . 37v maximum reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40v maximum differential input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40v case to lead breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200v esd rating human body model (tested per mil-std-883 tm3015.7) . . . . . . . . 3kv machine model (tested per eia/jesd22-a115-a) . . . . . . . . . . . . . . 300v charged device model (tested per jesd22-c101d) . . . . . . . . . . . . 750v thermal resistance (typical) ? ja (c/w) ? jc (c/w) 2 ld flatpack ( notes 3 , 4 ) . . . . . . . . . . . . . . 80 8 storage temperature range. . . . . . . . . . . . . . . . . . . . . . . .-65c to +155c maximum junction temperature (t jmax ) . . . . . . . . . . . . . . . . . . . . .+150c recommended operating conditions ambient operating temperature range . . . . . . . . . . . . . .-55c to +125c maximum operating junction temperature . . . . . . . . . . . . . . . . . .+150c supply voltage (v+ to v-) ( notes 5 , 6 ) . . . . . . . . . . . . . . . . . . . . . . 4v to 33v caution: do not operate at or near the maximum ratings listed for extended periods of time. exposure to such conditions may adv ersely impact product reliability and result in failures not covered by warranty. notes: 3. ? ja is measured in free air with the componen t mounted on a high effective thermal conduc tivity test board with ?direct attach? fe atures. see tech brief tb379 . 4. for ? jc , the ?case temp? location is the center of the ceramic on the package underside. 5. the maximum supply voltage specified is for operation in a heavy ion environment at an let = 86.4 mev?cm 2 /mg. 6. the maximum voltage beyond which output curren t performance is not to be considered valid ( figure 9 ). electrical specifications v s = 5v, t a = +25c, unless otherwise noted. boldface limits apply across the operating temperature range, -55c to +125c. symbol parameter test conditions min ( note 7 )typ max ( note 7 )unit v s power supply voltage range (v+ to v-) ( note 5 ) 431 v i o nominal current output 298.1 a e ambient error accuracy -0.50 -0.05 0.50 c tci o current output temperature coefficient 1 a/k e a absolute error without external calibration over full temperature range -2.0 2.0 c nl nonlinearity at 5 discrete temperature points -0.5 0.5 c rpt repeatability after temperature range end point cycling -0.1 0.1 c de/dt long term drift v+ = 31v for 1khr at +125c -0.25 -0.05 0.25 c psrr output current v s rejection 5v > v s >4v 0.05 0.50 a/v 5v v s 15v 0.03 0.20 a/v 5v v s 31v 0.04 0.10 a/v v nd voltage noise density f = 100hz 0.03 v/ hz i nd current noise density f = 100hz 30 pa/ hz iso case isolation to either lead case to lead voltage = 200v 10 10 c s effective shunt capacitance f = 10hz 65 pf t on electrical turn-on time v s = 4v to i out stable 2 s i leak -10v reverse bias leakage current +125c = worst case 50 na post radiation e- radd ( figure 19 ) post low dose rate radiation (ldr) ambient error 50krad at 0.01 rad(si)/s ambient error accuracy plus tid shift ( note 8 ) -2.0 0.5 c post high dose rate radiation (hdr) ambient error 300krad at 70 rad(si)/s ambient error accuracy plus tid shift ( note 8 ) -2.0 0.5 c notes: 7. compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design. 8. the post radiation ambient error specs are defined as the absolute temperature error.
isl71590seh 5 june 3, 2016 fn8376.2 submit document feedback table 1. burn-in and life test delta parameters parameter symbol burn-in end point burn-in delta mil-std group c end point mil-std group c delta units ambient error (+25c) e ? 0.5 ? 0.25 ? 0.5 ? 0.25 c typical performance curves unless otherwise specified, v s = 5v, t a = +25c. figure 6. output current vs temperature figure 7. output current vs v s voltage figure 8. typical absol ute error without external calibration vs temperature figure 9. vi curve of v s vs i out over-temperature 200 250 300 350 400 450 -55 -45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 115 125 135 145 155 temperature (c) output current (a) 297.9 298.0 298.1 298.2 298.3 298.4 298.5 298.6 298.7 4 6 8 1012141618202224262830 supply voltage (v) output current (a) -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 -55 -35 -15 5 25 45 65 85 temperature (c) output current error (a) 105 125 145 155 supply voltage (v) +25c +125c -55c 100 200 300 400 500 0.0 output current (a) 0 5 10 15 20 25 30 35 40 45 50 rl = 1k
isl71590seh 6 june 3, 2016 fn8376.2 submit document feedback figure 10. voltage noise density vs frequency figure 11. current noise density vs frequency figure 12. ac psrr vs frequency figure 13. shunt capacitance vs frequency figure 14. single temperature error calibration figure 15. turn-on/off v s voltage typical performance curves unless otherwise specified, v s = 5v, t a = +25c. (continued) 0.01 0.1 1.0 0.1 1 10 100 1k 10k 100k ? frequency (hz) voltage noise density (v/hz) 10 100 1000 0.1 1 10 100 1k 10k 100k frequency (hz) current noise density (pa/hz) -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 100 1k 10k 1m 10m frequency (hz) ac psrr (db) v s = 12v with 1.7v p_p ripple 100m 100k 10 20 30 40 50 60 70 1 10 100 1k 10k 50mv p-p frequency (hz) capacitance (pf) v s + - 950 v out ~100 adjust r to calibrate out error for any single temperature point t v s v out = i out *r (1k) 0v
isl71590seh 7 june 3, 2016 fn8376.2 submit document feedback functional description functional overview the isl71590seh is an integrated-circuit temperature-to-current transducer, which produces an ou tput current proportional to absolute temperature. the devi ce acts as a high impedance constant current regulator passing 1 a/k for supply voltages (v+ to v-) from +4v to +33v. the isl71590seh is manufactur ed in intersil?s pr40, silicon-on-insulator process, whic h makes this device immune to single event latch-up and provides excellent radiation tolerance. this makes it the ideal choice for high reliability applications in harsh radiation prone environments. the isl71590seh is specified over temperatures of -55c to +125c without the need for additi onal circuitry to produce an output within 1.7c accuracy. with power requirements as low as 1.5mw (5v at +25c), it is an ideal choice for remote sensing as any length of a well-insulated twisted pair cable will allow for proper operation. the high output impedance (>10m ) leaves plenty of room for variations in the power supply voltage. it is electrically durable since it can withstand a forward operating voltage of 33v over the full temperature range with and without ion beam radiation and a reverse voltage of -40v. the isl71590seh should be used in any temperature sensing application from -55c to + 150c in which conventional electrical temperature sensors are currently employed. the isl71590seh provides a total temperature sensing solution that is both low in complexity and sm all in size by eliminating the figure 16. v s ramp = 3.7v/ms, i out turn-on figure 17. v s ramp = 5v/s, i out turn-on figure 18. v s ramp = 50v/s, i out turn-on figure 19. typical absolute i out error vs total ionizing dose for high dose rate typical performance curves unless otherwise specified, v s = 5v, t a = +25c. (continued) v s v out = i out *r (1k) 0v v s v out = i out *r (1k) 0v v out = i out *r (1k) v s 0v -1.00 -0.80 -0.60 -0.40 -0.20 0.00 0.20 0.40 0.60 0 50k 100k 150k 300k total dose (krad(si)) output current error (a) 200 50k
isl71590seh 8 june 3, 2016 fn8376.2 submit document feedback support circuitry nece ssary with other thermal sensors such as thermistors, thermocouples and other discrete based solutions. external linearization circuitry, precision voltage amplifiers, resistance measuring circuitry an d cold junction compensation are not needed when applying the isl71590seh. in the simplest application, th e isl71590seh, a resistor, a power source and any voltmeter can be used to measure temperature. ideally resistors used should be of a metal film or metal strip type, such resistors having very low thermal coefficient values. when voltage is initially applied to the isl71590seh, the circuit becomes active at slightly less than 4v, (v+ to v-) , with i out ramping up typically 2s after. there will be an initial short period of time for the i out to be correctly proportional to the ambient temperature. depending on the v s ramp rate and amplitude this may take a few s before a reliab le temperature reading is available. see figures 15 through 18 for scope shot examples. the output characteristics also makes the isl71590seh easy to multiplex; with either or both the input supply voltage or the output current can be switched by a cmos multiplexer such as the hs-508 or hs-1840 from intersil. when the isl71590seh die product is used, the die substrate should be tied to the more ne gative of the 2 terminals for optimum performance. parameter glossary the isl71590seh parametric specifications provide for an understanding of the temperature sensor performance over-temperature and radiation exposure. following are critical parameter explanations as they relate to usage and interpretation. ambient error accuracy refers to the maximum error at an ambient temperature of +25c and is expressed as ? 0.5c of the nominal current output at +25c (298.15k) of 298.15 a. the absolute error without external calibration describes the temperature accuracy over the entire -55c to +125c range. the typical performance is shown in figure 8 on page 5 . both of these two first specification explanations are to be considered as initial error accuracy specifications. the post low dose rate radiation ambient error (e radd ) is the specified accuracy after 50krad(si) at 0.01 rad(si) per second (ldr) and 300krad(si) at 70 rad( si) per second (hdr) exposure. this radiation hardness performance is unmatched in the industry for this class of device, this performance is shown in figure 2 on page 1 as a delta over radiation type and in figure 19 on page 7 as an absolute measurement. non-linearity in referring to the isl71590seh, is the maximum allowable deviation of the output current over-temperature for any single part relative to its individual best fit line over 5 discrete temperature (-55c, -15c, +25c, +85c, +125c) points. this performance is guaranteed by testing. repeatability errors arise from a strain hysteresis of the package. for the isl71590seh th is is the maximum deviation between +25c readings after a single temperature excursion between -55c and +125c, and is guaranteed by characterization and is not tested. the magnitude of this error is solely a function of the magnitude of the temperature span and duration over which the device is exposed. long term drift errors are related to the average operating temperature and the magnitude of the thermal shocks experienced by the device. extended use of the isl71590seh temperatures at +125c typically results in long-term drift of ? ? 0.05c after 1khr with a specification of - 0.25c to +0.25c. trimming out errors the ideal graph of current versus temperature for the isl71590seh is a straight line, but as figure 20 on page 9 shows, the actual shape is slight ly different (exaggerated greatly for explanation). since the sensor is limited to the range of -55c to +150c it is possible to opti mize the accuracy by trimming. trimming extracts the maximum performance from the sensor. the circuit in figure 21 on page 9 trims the slope of the isl71590seh output. the effect of this is shown in figure 22 on page 9 . the circuit of figure 23 on page 9 trims both the slope and the offset. starting in figure 24 on page 9 with an untrimmed slope, then progressing through to figure 27 on page 10 each figure showing the effect of adjusting the offset and slope and finally the offset again to finally arrive at an optimize d condition. the diagrams curvatures are highly are exaggerated to show effects, but it should be clear that these trims can be used to minimize errors over a partial or the entire temperature range.
isl71590seh 9 june 3, 2016 fn8376.2 submit document feedback trimming out errors figure 20. trimming out errors figure 21. slope trimming figure 22. effect of slope trim fi gure 23. slope and offset trimming figure 24. untrimmed figur e 25. trim one: offset ideal actual (greatly exaggerated) i out (a) t (k) +v s + - 950 v out ~100 adjust r to calibrate out error for any single temp point t ideal actual trimmed i out (a) t (k) r 1 2k 35.7k r 2 5k 97.6k +10v v out = 100mv/c isl71590seh r 1 = offset v- + - + - t r 2 = slope t (k) i out (a) i out (a) t (k)
isl71590seh 10 june 3, 2016 fn8376.2 submit document feedback typical applications the following section of the datasheet illustrates several application ideas, touching on each with a short explanation. there is an evaluation board isl71590sehev1z and accompanying user guide ?isl71590seh evaluation board user?s guide? that details 4 of the more fundamental implementations of this device. the sum of the isl71590seh currents appears across r, which represents the average temperature in the sensor array (see figure 31 ). figure 26. trim two: slope figure 27. trim three: offset again trimming out errors (continued) i out (a) t (k) t (k) i out (a) figure 28. typical application figure 29. simple connection. output is proportional to absolute temperature + - isl71590seh 1k +5v v out = 1mv/k t 423.0 298.2 218.0 218k 298.2k 423k (-55c) (+25c) (+150c) temperature output current (ma) v s = +14v 1k + isl71590seh - v out = 1mv/k + - + - 0.1% maximum number = (v smin - v outmax )/4v t t t v s = +12v + - + - + - v out = (i o1 +i o2 - +i on ) . r e.g., with 4 sensors and r = 250 v out = 1mv/k) 1 r n where n = number of isl71590seh 2 t t t n
isl71590seh 11 june 3, 2016 fn8376.2 submit document feedback in figure 32 , the isl71590seh produces a temperature dependent voltage across r t (c is for filtering noise). setting r 2 produces a scale-zero voltage. for the celsius scale, make r t =1k and v zero = 0.273v. for fahrenheit, r t = 1.8k and v zero = 0.460v. figure 33 , illustrates the simplest thermometer displaying current output directly in kelv in. using the isl71590seh, sensor output is within 1.7k over the entire range. note: all values are in k . in figure 34 , the icl7106 has a v in span of 2.0v and a v cm range of (v+ - 0.5v) to (v- + 1v). r is scaled to bring each range within v cm while not exceeding v in . the v ref for both scales is 500mv, maximum reading on the celsius range is 150c limited by the maximum allowable sensor temperature. maximum reading on the fahrenheit range is 199.9f (93.3c ) limited by the number of display digits. figure 35 , illustrates the kelvin scale version reading from 0 to 1999k theoretically, and from 223k to 473k actually. the 2.26k resistor brings the input within the icl7106 v cm range: 2 general-purpose silicon diodes or an led may be substituted . figure 32. single setpoint temperature controller +15v r t + isl71590seh - c 3 2 4 1 7 r 1 r b r 2 r 3 is139 isl71090seh12 1.25v v zero heater element 0.1% + - isl71590seh + - i + - 500a figure 33. simplest thermometer 4v < v batt < 30v v+ ref hi ref lo icl7106 in hi common in lo r 1 r + - v- r 2 r 3 r 4 r 5 isl71590seh figure 34. basic digital thermometer, celsius and fahrenheit scales t rr 1 r 2 r 3 r 4 r 5 f 9.00 4.02 2.0 12.4 10.0 0 c 5.00 4.02 2.0 5.11 5.0 11.8 figure 35. basic digital thermometer, kelvin scale r n n1 = 5 ? 28k ? = nominal v+ 7.5k 2.26k + - v- 5k 15k 1.00k isl71590seh scale adj ref hi ref lo icl7106 in hi common in lo t
isl71590seh 12 june 3, 2016 fn8376.2 submit document feedback the circuit in figure 36 allows ?zero adjustment? as well as slope adjustment. the isl71090seh12 brings the input within the common-mode range, while the 5k pots trim any offset at 218k (-55c) and set the scale factor. since all 3 scales have narrow v ln spans, some optimization of the icl7106 components can be made to lower noise and preserve cmr. table 2 shows the suggested values. similar scaling can be used with the icl7126 and icl7136 (see figures 34 through 36 ). figure 37 , illustrates the low bias current of the isl70417, which allows the use of large value gain resistors, keeping meter current error under 0.5%. therefore saving the expense of an extra meter driving amplifier. figure 38 shows a differential te mperature sensing circuit configuration. the 50k pot trims offset in the devices whether internal or external, so it can be used to set the size of the difference interval. this also makes it useful for liquid level detection where there will be a measurable temperature difference. in figure 39 the reference junction(s) should be in close thermal contact with the isl71590seh case . v+ must be at least 4v, while isl71090seh12 current should be set 1ma to 2ma. calibration does not require shorting or removal of the thermocouple: set r 1 for v 2 = 10.98mv. if very precise measurements are needed, adjust r 2 to the exact seebeck coefficient for the thermocouple used (measured or from table) note v 1 and set r 1 to buck out this voltage (i.e., set v 2 = v 1 ). for other thermocouple types, adjust values to the appropriate seebeck coefficient. figure 36. basic digital thermo meter, kelvin scale with zero adjust table 2. scale v in range (v) rint (k ) caz (f) k 0.223 to 0.473 220 0.47 c -0.25 to +1.0 220 0.1 f -0.29 to +0.996 220 0.1 for all: c ref = 0.1f c lnt = 0.22f c osc =100pf r osc = 100k v+ 7.5k 1k + - v- 5k 15k isl71590seh scale adj 0.1% 1.000v 12k zero adj 26.1k 5k 402 isl71090seh12 1.25v ref hi ref lo icl7106 in hi common in lo t figure 37. centigrade th ermometer (0c to +100c) figure 38. differential thermometer +15v 10k 1k + isl71590seh - 10mv/c 20k 44.2k 0.1% zero set 115k 118k full-scale adjust 100 10k 2.7315v m +100ma + - - isl70417 ( 1 / 4 ) t 10k + no. 1 - v out = (t 2 - t 1 ) x v+ 50k 5m 10k + - + - (10mv/c) v- (8v min) no. 2 t t isl70417 ( 1 / 4 )
isl71590seh 13 june 3, 2016 fn8376.2 submit document feedback v+ 1ma/ k r 2 40.2 seebeck coefficient = 40mv/k type k v out + - 1.25v 4.7mf r 1 4521 40.2 v+ + - t c = 40mv/k v 1 = 10.98mv v 2 = 10.98mv + - figure 39. cold junction compensation for type k thermocouple t isl71090seh12
isl71590seh 14 june 3, 2016 fn8376.2 submit document feedback package characteristics weight of packaged device 0. 07grams (typical) lid characteristics finish: gold potential: floating case isolation to any lead: 10 x 10 9 (minimum) die characteristics die dimensions 1185m x 1695m (46.7 mils x 66.7 mils) thickness: 254m 25.4m (10 mils 1 mil) interface materials glassivation type: nitrox thickness: 15k? top metallization type: alcu (99.5%/0.5%) thickness: 30k? backside finish silicon assembly related information substrate potential tied to v- pin additional information worst case current density <5 x 10 3 a/cm 2 process dielectrically isolated bipolar soi - pr40 transistor count 92 metallization mask layout pad name pin number x (m) y (m) ? x (m) ? y (m) bond wires per pad v+ 1 0 01101101 v- 2 823 0 110 110 1 notes: 9. origin of coordinates is the centroid of pad 1. 10. bond wire size is 1.25 mil. v+ (1) v- (2)
isl71590seh 15 intersil products are manufactured, assembled and tested utilizing iso9001 quality systems as noted in the quality certifications found at www.intersil.com/en/suppor t/qualandreliability.html intersil products are sold by description only. intersil corporat ion reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is believed to be accurate and reliable. however, no responsi bility is assumed by intersil or its subsid iaries for its use; nor for any infringem ents of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of i ntersil or its subsidiaries. for information regarding intersil corporation and its products, see www.intersil.com june 3, 2016 fn8376.2 for additional products, see www.intersil.com/en/products.html submit document feedback about intersil intersil corporation is a leading provider of innovative power ma nagement and precision analog so lutions. the company's product s address some of the largest markets within the industrial and infrastr ucture, mobile computing and high-end consumer markets. for the most updated datasheet, application notes, related documentatio n and related parts, please see the respective product information page found at www.intersil.com . you may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask . reliability reports are also av ailable from our website at www.intersil.com/support . revision history the revision history provided is for informational purposes only and is believed to be accurate, but not warranted. please go t o web to make sure you have the latest revision. date revision change june 3, 2016 fn8376.2 clarified minimum differential vo ltage throughout document. replaced figures 5 and 6. january 19, 2016 fn8376.1 removed pb-free reflow reference from ?therm al information? on page 4 as it is not applicable to hermeti c packages. in ?electrical specifications? on page 4: -updated ea maximum and minimum limits. -updated eradd low dose minimum limits. -updated eradd high dose minimum limits. updated about intersil section. september 26, 2013 fn8376.0 initial release
isl71590seh 16 june 3, 2016 fn8376.2 submit document feedback package outline drawing k2.a 2 lead ceramic metal seal flatpack package rev 1, 4/12 lead finish side view 1. adjacent to pin one and shall be located within the shaded area shown. the manufacturers identification shall not be used as a pin on e identification mark. alternately, a tab may be used to identify pin one. 2. of the tab dimension do not apply. 3. the maximum limits of lead dimensions (section a-a) shall be measured at the centroid of the finished lead surfaces, when so lder dip or tin plate lead finish is applied. 4. 5. notes: 3 dimensions: inch (mm). controlling dimension: inch. index area: a notch or a pin one identification mark shall be l ocated if a pin one identification mark is used in addition to a tab, the limits dimensioning and tolerancing conform to ansi y14.5m-1982. section a-a base metal 0.0065 (0.1651) 0.0045 (0.1143) 0.0095 (0.2413) 0.0045 (0.1143) 0.019 (0.48) 0.015 (0.38) 0.0015 (0.04) max 0.022 (0.56) 0.015 (0.38) 0.014 (0.356) ref 0.050 (1.270) bsc 0.500 (12.70) min 0.030 (0.762) ref pin no. 1 id optional 1 2 pin no. 1 id area positive lead indi cator (no. 1) 0.019 (0.483) 0.240 (6.10) 0.220 (5.59) 0.015 (0.381) 0.093 (2.362) 0.081 (2.057) 0.0065 (0.1651) 0.0045 (0.1143) 0.210 (5.33) 0.190 (4.83) 0.050 (1.270) 0.041 (1.041) top view a a


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