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www.irf.com 1 parameter maximum units i d @ t a = 25c continuous drain current, v gs @ -4.5v -5.3 a i d @ t a = 70c -4.3 i dm pulsed drain current -43 p d @t a = 25c power dissipation 2.0 w p d @t a = 70c 1.3 linear derating factor 16 mw/c v gs gate-to-source voltage 12 v dv/dt peak diode recovery dv/dt -5.0 v/ns t j, t stg junction and storage temperature range -55 to +150 c co-packaged hexfet ? power mosfet and schottky diode ideal for buck regulator applications p-channel hexfet low v f schottky rectifier generation 5 technology so-8 footprint irf7322d1pbf fetky mosfet / schottky diode notes: repetitive rating; pulse width limited by maximum junction temperature (see figure 9) i sd -2.9a, di/dt -77a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle 2% surface mounted on fr-4 board, t 10sec parameter maximum units r ja junction-to-ambient 62.5 c/w absolute maximum ratings (t a = 25c unless otherwise noted) thermal resistance ratings description v dss = -20v r ds(on) = 0.058 ? schottky vf = 0.39v the fetky family of co-packaged mosfets and schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. generation 5 hexfet power mosfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combinining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics. the so-8 package is designed for vapor phase, infrared or wave soldering techniques. top view 8 12 3 4 5 6 7 a as g dd k k so-8 10/12/04 pd - 95298 lead-free downloaded from: http:///
irf7322d1pbf 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 v v gs = 0v, i d = -250a r ds(on) static drain-to-source on-resistance 0.049 0.062 v gs = -4.5v, i d = -2.9a 0.082 0.098 v gs = -2.7v, i d = -1.5a v gs(th) gate threshold voltage -0.70 v v ds = v gs , i d = -250a g fs forward transconductance 5.9 s v ds = -10v, i d = -1.5a i dss drain-to-source leakage current -1.0 v ds = -16v, v gs = 0v -25 v ds = -16v, v gs = 0v, t j = 55c i gss gate-to-source forward leakage 100 v gs = -12.0v gate-to-source reverse leakage -100 v gs = 12.0v q g total gate charge 19 29 i d = -2.9a q gs gate-to-source charge 4.0 6.1 nc v ds = -16v q gd gate-to-drain ("miller") charge 7.7 12 v gs = -4.5v (see figure 6) t d(on) turn-on delay time 15 22 v dd = -10v t r rise time 40 60 i d = -2.9a t d(off) turn-off delay time 42 63 r g = 6.0 ? t f fall time 49 73 r d = 3.4 ? c iss input capacitance 780 v gs = 0v c oss output capacitance 470 pf v ds = -15v c rss reverse transfer capacitance 240 ? = 1.0mhz (see figure 5) mosfet electrical characteristics @ t j = 25c (unless otherwise specified) ? a na ns parameter min. typ. max. units conditions i s continuous source current (body diode) -2.5 a i sm pulsed source current (body diode) -21 v sd body diode forward voltage -1.2 v t j = 25c, i s = -2.9a, v gs = 0v t rr reverse recovery time (body diode) 47 71 ns t j = 25c, i f = -2.9a q rr reverse recovery charge 49 73 nc di/dt = 100a/s mosfet source-drain ratings and characteristics parameter max. units. conditions i f(av) max. average forward current 2.7 50% duty cycle. rectangular wave, t a = 25c 2 t a = 70c i sm max. peak one cycle non-repetitive 120 5s sine or 3s rect. pulse following any rated surge current 11 10ms sine or 6ms rect. pulse load condition & with v rrm applied schottky diode maximum ratings parameter m ax. units conditions v fm max. forward voltage drop 0.50 i f = 1.0a, t j = 25c 0.62 i f = 2.0a, t j = 25c 0.39 i f = 1.0a, t j = 125c 0.57 i f = 2.0a, t j = 125c . i rm max. reverse leakage current 0.02 v r = 20v t j = 25c 8 t j = 125c c t max. junction capacitance 92 pf v r = 5vdc ( 100khz to 1 mhz) 25c dv/dt max. voltage rate of charge 3600 v/ s rated v r schottky diode electrical specifications v ma see fig. 14 downloaded from: http:///
irf7322d1pbf www.irf.com 3

1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v = -10v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 20s pulse width t = 25 c j top bottom vgs -7.50v -4.50v -4.00v -3.50v -3.00v -2.70v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v 0.1 1 10 100 0.1 1 10 20s pulse width t = 150 c j top bottom vgs -7.50v -4.50v -4.00v -3.50v -3.00v -2.70v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a i = -2.9a v = -4.5v d gs power mosfet characteristics downloaded from: http:///
irf7322d1pbf 4 www.irf.com 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j power mosfet characteristics fig 8. maximum safe operating area

0 200 400 600 800 1000 1200 1400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 30 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) i = -2.9a v = -16v d ds
! 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms downloaded from: http:///
irf7322d1pbf www.irf.com 5 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) r ds (on) , drain-to-source on resistance ( ? ) r ds (on) , drain-to-source on resistance ( ? ) fig 10. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage fig 9. maximum effective transient thermal impedance, junction-to-ambient power mosfet characteristics 0.0 0.2 0.4 0.6 0.8 0 4 8 1 21 62 0 a -i , drain current (a) d v = -4.5v gs v = -2.7v gs 0.03 0.04 0.05 0.06 0.07 0.08 0.0 2.0 4.0 6.0 8.0 a gs v , gate-to-source voltage (v) i = -5.3a d downloaded from: http:///
irf7322d1pbf 6 www.irf.com schottky diode characteristics

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0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c jj j 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 f(av) a average forward current - i (a) allowable ambient temperature - (c) d = 3/4 d = 1/2 d =1/3 d = 1/4 d = 1/5 dc v = 20v r = 62.5c/w square wave r thja fig.14 - maximum allowable ambient temp. vs. forward current forward voltage drop - v f (v) downloaded from: http:///
irf7322d1pbf www.irf.com 7 rect ifier logo internat ional example: t his is an irf7807d1 (fet ky) xxxx 807d1 y = las t digit of t he year a = assembly site code ww = week lot code product (optional) p = disgnates lead - free dat e code (yww) part number e1 de y b aa1 h k l .189 .1497 0 .013 .050 b as ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches mi n max di m 8 e c .0075 .0098 0.19 0.25 .025 b as ic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 43 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. out line conf orms t o jedec out line ms -012aa. not es : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. cont rolling dimens ion: millime t er 3. dime ns ions ar e s h own in mil l ime t e r s [inch e s ]. 5 dimens ion doe s not include mold prot rus ions . 6 dimens ion doe s not include mold prot rus ions . mold prot rus ions not t o exce ed 0.25 [.010]. 7 dimens ion is t he le ngt h of lead for s oldering t o a s ubs t rat e. mold prot rus ions not t o exce ed 0.15 [.006]. 8x 1.78 [.070] so-8 (fetky) package outlineso-8 (fetky) part marking information downloaded from: http:///
irf7322d1pbf 8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in milimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/04 downloaded from: http:///

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