51 mm (2 inch) diameter, 10-stage, head-on type extended red multialkali photocathode characteristics (at 25 c) electrodes kg 1 dy1 dy2 dy3 dy4 dy5 dy6 dy7 dy8 dy9 dy10 p ratio 1 1 1 1 1 1 1 1 1 1 1 suppiy voltage: 1000 v, k: cathode, g: grid, dy: dynode, p: anode voltage dlstrlbutlon ratlo and supply voltage general maximum ratings (absolute maximum values) information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?014 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. photomultiplier tube r669 parameter description / value unit spectral response wavelength of maximum response photocathode window material dynode base operating ambient temperature storage temperature suitable socket nm nm mm c c 300 to 900 600 extended red multialkali 46 borosilicate glass box and grid 10 15-pin glass base -30 to +50 -80 to +50 e678-15c (supplied) material minimum effective area structure number of stages parameter value unit supply voltage average anode current 1500 250 0.1 v v ma between anode and cathode between anode and last dynode parameter min. unit cathode sensitivity anode sensitivity gain anode dark current (after 30 min storage in darkness) time response luminous (2856 k) radiant at 420 nm red / white ratio (r-68) luminous (2856 k) radiant at 420 nm anode pulse rise time electron transit time 140 20 230 50 0.35 75 1.7 10 4 3.3 10 5 7 9.0 70 a/lm ma/w a/lm a/w na ns ns 15 typ. max. note: anode characteristics are measured with the voltage distribution ratio shown below.
figure 1: typical spectral response figure 2: typical gain characteristics tpmh1257e04 feb. 2014 ip figure 3: dimensional outline and basing diagram (unit: mm) figure 4: accessories (unit: mm) photomultiplier tube r669 tpmha0457ea tacca0201ea tacca0246eb socket (supplied) e678-15c d type socket assembly (sold separately) e1435-02 hamamatsu photonics k.k. hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fax: (1)908-231-12 18 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, fa x: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, tele phone: (44)1707-294888, fax: (44)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: torshamnsgatan 35 se-164 40 kista, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e -mail: info@hamamatsu.se italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39)02-93581733, fax: (39)02-93581741 e-mail: info@hamamatsu.it china: hamamatsu photonics (china) co., ltd.: b1201 jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china , telephone: (86)10-6586-6006, fax: (86)10-6586-2866 e-mail: hpc@hamamatsu.com.cn 51.0 1.5 46min. faceplate photo- cathode 112 2 15 pin base 13 max. 5 6 1 2 3 4 7 8 9 10 11 12 13 14 15 dy4 dy6 k dy10 ic dy7 dy5 dy3 dy1 dy8 g dy2 p ic dy9 short pin 50 60 40 4 45 2 5 11.5 40 5 k g housing (metal) -hv shield cable (red) power supply gnd signal gnd signal output rg-174/u (black) c4 r12 r11 r10 r9 r8 r7 r6 r5 r4 r3 r2 r1 c3 c2 c1 p dy10 dy9 dy8 dy7 dy6 dy5 dy4 dy3 dy2 dy1 6 4 8 3 9 2 10 1 11 15 12 14 13 r1 to r12 c1 to c3 c4 : 330 k ? : 10 nf : 4.7 nf 40.0 0.5 36.0 0.5 450 10 2 52.0 0.5 pmt socket pin no. potting compound * the housing is internally connected to the gnd. ** high voltage shielded cable can be connected to a connector for rg-174/u. * hamamatsu also provides c11152 series high voltage power supply modules. tpmhb0341eb 200 300 400 500 600 700 800 900 1000 cathode radiant sensitivity (ma/w) quantum efficiency (%) wavelength (nm) 10 -2 10 -1 10 0 10 2 10 1 quantum efficiency cathode radiant sensitivity tpmhb0608eb 500 700 900 600 800 1500 1000 1200 10 2 10 3 10 4 10 5 10 6 10 7 10 8 gain supply voltage (v)
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