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november 2016 docid028676 rev 4 1 / 19 this is information on a product in full production. www.st.com STGD4M65DF2 trench gate field - stop igbt, m series 650 v, 4 a low loss datasheet - production data figure 1 : internal schematic diagram features ? 6 s of short - circuit withstand time ? v ce(sat) = 1.6 v (typ.) @ i c = 4 a ? tight parameter distribution ? safer paralleling ? low thermal resistance ? soft and very fast recovery antipara llel diode applications ? motor control ? ups ? pfc description this device is an igbt developed using an advanced proprietary trench gate field - stop structure. the device is part of the m series igbts, which represent an optimal balance between inverter system performance and efficiency where low - loss and short - circuit functionality a re essential. furthermore, the positive v ce(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. table 1: device summary order code marking package packing STGD4M65DF2 g4m65df2 dpak tape and reel
contents STGD4M65DF2 2 / 19 docid028676 rev 4 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ................... 11 4 package information ................................ ................................ ..... 12 4.1 dpak (to - 252) type a2 package information ................................ . 13 4.2 pac king information ................................ ................................ ......... 16 5 revision history ................................ ................................ ............ 18
STGD4M65DF2 electrical ratings docid028676 rev 4 3 / 19 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ces collector - emitter voltage (v ge = 0 v) 650 v i c continuous collector current at t c = 25 c 8 a continuous collector current at t c = 100 c 4 a i cp (1) pulsed collector current 16 a v ge gate - emitter voltage 20 v i f continuous forward current at t c = 25 c 8 a continuous forward current at t c = 100 c 4 a i fp (1) pulsed forward current 16 a p tot total dissipation at t c = 25 c 68 w t stg storage temperature range - 55 to 150 c t j operating junction temperature range - 55 to 175 c notes: (1) pulse widht limited by maximum junction temperature. table 3: thermal data symbol parameter value unit r thjc thermal resistance junction - case igbt 2.2 c/w r thjc thermal resistance junction - case diode 5 c/w r thja thermal resistance junction - ambient 100 c/w
electrical characterist ics STGD4M65DF2 4 / 19 docid028676 rev 4 2 electrical characteristics t c = 25 c unless otherwise specified table 4: static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector - emitter breakdown voltage v ge = 0 v, i c = 250 a 650 v v ce(sat) collector - emitter saturation voltage v ge = 15 v, i c = 4 a 1.6 2.1 v v ge = 15 v, i c = 4 a, t j = 125 c 1.9 v ge = 15 v, i c = 4 a, t j = 175 c 2.1 v f forward on - voltage i f = 4 a 1.9 v i f = 4 a, t j = 125 c 1.7 i f = 4 a, t j = 175 c 1.6 v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 5 6 7 v i ces collector cut - off current v ge = 0 v, v ce = 650 v 25 a i ges gate - emitter leakage current v ce = 0 v, v ge = 20 v 250 a table 5: dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 v - 369 - pf c oes output capacitance - 24.8 - c res reverse transfer capacitance - 8 - q g total gate charge v cc = 520 v, i c = 4 a, v ge = 15 v (see figure 30: " gate charge test circuit" ) - 15.2 - nc q ge gate - emitter charge - 3 - q gc gate - collector charge - 7 -
STGD4M65DF2 electrical characteristics docid028676 rev 4 5 / 19 table 6: igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v ce = 400 v, i c = 4 a, v ge = 15 v, r g = 47 (see figure 29: " test circuit for inductive load switching" ) 12 - ns t r current rise time 6.9 - ns (di/dt) on turn - on current slope 480 - a/s t d(off) turn - off - delay time 86 - ns t f current fall time 120 - ns e on (1) turn - on switching energy 0.040 - mj e off (2) turn - off switching energy 0.136 - mj e ts total switching energy 0.176 - mj t d(on) turn - on delay time v ce = 400 v, i c = 4 a, v ge = 15 v, r g = 47 , t j = 175 c (see figure 29: " test circuit for inductive load switching" ) 11.6 - ns t r current rise time 8 - ns (di/dt) on turn - on current slope 410 - a/s t d(off) turn - off - delay time 85 - ns t f current fall time 211 - ns e on (1) turn - on switching energy 0.067 - mj e off (2) turn - off switching energy 0.210 - mj e ts total switching energy 0.277 - mj t sc short - circuit withstand time v cc 400 v, v ge = 15 v, t jstart = 150 c 6 - s v cc 400 v, v ge = 13 v, t jstart = 150 c 10 - s notes: (1) including the reverse recovery of the diode. (2) including the tail of the collector current. table 7: diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 4 a, v r = 400 v, v ge = 15 v, di/dt = 800 a/s (see figure 29: " test circuit for inductive load switching" ) - 133 - ns q rr reverse recovery charge - 140 - nc i rrm reverse recovery current - 5 - a di rr /dt peak rate of fall of reverse recovery current during t b - 520 - a/s e rr reverse recovery energy - 15 - j t rr reverse recovery time i f = 4 a, v r = 400 v, v ge = 15 v, t j = 175 c, di/dt = 800 a/s (see figure 29: " test circuit for inductive load switching" ) - 236 - ns q rr reverse recovery charge - 370 - nc i rrm reverse recovery current - 6.6 - a di rr /dt peak rate of fall of reverse recovery current during t b - 378 - a/s e rr reverse recovery energy - 32 - j
electrical characteristics STGD4M65DF2 6 / 19 docid028676 rev 4 2.1 electrical characteristics (curves) figure 2 : power dissipation vs. case temperature figure 3 : collector current vs. case temperature figure 4 : output characteristics (t j = 25 c) figure 5 : output characteristics (t j = 175 c) figure 6 : v ce(sat) vs. junction temperature figure 7 : v ce(sat) vs. collector current
STGD4M65DF2 electrical characteristics docid028676 rev 4 7 / 19 figure 8 : collector current vs. switching frequency figure 9 : forward bias safe operating area figure 10 : transfer characteristics figure 11 : diode v f vs. forward current figure 12 : normalized v ge(th) vs. junction temperature figure 13 : normalized v (br)ces vs. junction temperature
electrical characterist ics STGD4M65DF2 8 / 19 docid028676 rev 4 figure 14 : capacitance variations figure 15 : gate charge vs. gate - emitter voltage figure 16 : switching energy vs. collector current figure 17 : switching energy vs. gate resistance figure 18 : switching energy vs. temperature figure 19 : switching energy vs. collector emitter voltage
STGD4M65DF2 electrical characteristics docid028676 rev 4 9 / 19 figure 20 : short - circuit time and current vs. v ge figure 21 : switching times vs. collector current figure 22 : switching times vs. gate resistance figure 23 : reverse recovery current vs. diode current slope figure 24 : reverse recovery time vs. diode current slope figure 25 : reverse recovery charge vs. diode current slope igbt170320161123rrq 370 365 360 355 350 0 150 300 450 600 750 di/dt (a/s) q rr (nc) v cc = 400 v, v ge = 15 v, i f = 4 a, t j = 175 c
electrical characteristics STGD4M65DF2 10 / 19 docid028676 rev 4 figure 26 : reverse recovery energy vs. diode current slope figure 27 : thermal impedance for igbt figure 28 : thermal impedance for diode 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zth t o2t_b cg20930 t p z th = k r thj-c = t p / ? 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 k 10 -1 t p (s) ? = 0.5 = 0.2 = 0.1 = 0.01 = 0.02 = 0.05 single pulse z th = k r thj-c = t p / ? t p ?
STGD4M65DF2 test circuits docid028676 rev 4 11 / 19 3 test circuits figure 29 : test circuit for inductive load switching figure 30 : gate charge test circuit figure 31 : switching waveform figure 32 : diode reverse recovery waveform t am01507v1 10% v rrm dv/dt di/dt i rrm i f t rr t s t f q rr i rrm a a c e g b r g + - g c 3 . 3 f 1 0 0 0 f l = 1 00 h v cc e d . u . t b a m 0 15 0 4 v 1
package information STGD4M65DF2 12 / 19 docid028676 rev 4 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STGD4M65DF2 package information docid028676 rev 4 13 / 19 4.1 dpak (to - 252) type a2 package information figure 33 : dpak (to - 252) type a2 package outline 0068772_type-a2_rev21
package information STGD4M65DF2 14 / 19 docid028676 rev 4 table 8: dpak (to - 252) type a2 mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 4.95 5.10 5.25 e 6.40 6.60 e1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 h 9.35 10.10 l 1.00 1.50 l1 2.60 2.80 3.00 l2 0.65 0.80 0.95 l4 0.60 1.00 r 0.20 v2 0 8
STGD4M65DF2 package information docid028676 rev 4 15 / 19 figure 34 : dpak (to - 252) type a2 recommended footprint (dimensions are in mm)
package information STGD4M65DF2 16 / 19 docid028676 rev 4 4.2 packing information figure 35 : dpak (to - 252) tape outline
STGD4M65DF2 package information docid028676 rev 4 17 / 19 figure 36 : dpak (to - 252) reel outline table 9: dpak (to - 252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r 40 t 0.25 0.35 w 15.7 16.3
revision history STGD4M65DF2 18 / 19 docid028676 rev 4 5 revision history table 10: document revision history date revision changes 25 - nov - 2015 1 first release. 18 - apr - 2016 2 modified: features in cover page modified: table 2: "absolute maximum ratings" , table 4: "static characteristics" , table 5: "dynamic characteristics" , table 6: "igbt switching characteristics (inductive load)" and table 7: "diode switching characteristics (inductive load)" added: section 2.1: "electrical characteristics (curves)" minor text changes 28 - apr - 2016 3 modified: table 1: "device summary" in cover page minor text changes 21 - nov - 2016 4 updated table 2: "absolute maximum ratings" updated figure 25: "reverse recovery charge vs. diode current slope" updated figure 32: " diode reverse recovery waveform"
STGD4M65DF2 docid028676 rev 4 19 / 19 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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