? 2000 ixys all rights reserved 1 - 2 mwi 100-06 a8 ixys reserves the right to change limits, test conditions and dimensions. 035 ixys reserves the right to change limits, test conditions and dimensions. features npt igbt technology low saturation voltage low switching losses switching frequency up to 30 khz square rbsoa, no latch up high short circuit capability positive temperature coefficient for easy parallelling mos input, voltage controlled ultra fast free wheeling diodes solderable pins for pcb mounting package with copper base plate advantages space savings reduced protection circuits package designed for wave soldering typical applications ac motor control ac servo and robot drives power supplies igbts symbol conditions maximum ratings v ces t vj = 25c to 150c 600 v v ges 20 v i c25 t c = 25c 130 a i c80 t c = 80c 88 a rbsoa v ge = 15 v; r g = 2.2 ; t vj = 125c i cm = 200 a clamped inductive load; l = 100 h v cek v ces t sc v ce = v ces ; v ge = 15 v; r g = 2.2 ; t vj = 125c 10 s (scsoa) non-repetitive p tot t c = 25c 410 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 100 a; v ge = 15 v; t vj = 25c 2.0 2.5 v t vj = 125c 2.3 v v ge(th) i c = 1.5 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ; v ge = 0 v; t vj = 25c 1.2 ma t vj = 125c 0.9 ma i ges v ce = 0 v; v ge = 20 v 400 na t d(on) 25 ns t r 11 ns t d(off) 150 ns t f 30 ns e on 1.0 mj e off 2.9 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 4.3 nf q gon v ce = 300v; v ge = 15 v; i c = 100 a tbd nc r thjc (per igbt) 0.3 k/w inductive load, t vj = 125c v ce = 300 v; i c = 100 a v ge = 15 v; r g = 2.2 i c25 = 130 a v ces = 600 v v ce(sat) typ. = 2.0 v igbt modules sixpack short circuit soa capability square rbsoa 13, 21 14, 20 1 2 3 4 7 8 9 10 11 12 5 6 17 19 15 advanced technical information
? 2000 ixys all rights reserved 2 - 2 mwi 100-06 a8 diodes symbol conditions maximum ratings i f25 t c = 25c 140 a i f80 t c = 80c 88 a symbol conditions characteristic values min. typ. max. v f i f = 100 a; v ge = 0 v; t vj = 25c 1.9 2.1 v t vj = 125c 1.4 v i rm i f = 60 a; di f /dt = -500 a/s; t vj = 125c 28 a t rr v r = 300 v; v ge = 0 v 100 ns r thjc (per diode) 0.61 k/w module symbol conditions maximum ratings t vj -40...+150 c t stg -40...+125 c v isol i isol 1 ma; 50/60 hz 2500 v~ m d mounting torque (m5) 3 - 6 nm symbol conditions characteristic values min. typ. max. r pin-chip 1.8 m d s creepage distance on surface 10 mm d a strike distance in air 10 mm r thch with heatsink compound 0.01 k/w weight 300 g dimensions in mm (1 mm = 0.0394") higher magnification se e ou tlines.pdf
|
