new product ss22s, ss23s & ss24s vishay general semiconductor document number: 89008 revision: 19-may-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 surface mount schottky barrier rectifier features ? low profile package ? ideal for automated placement ? low forward voltage drop, low power losses ? high efficiency ? high surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage, high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. (note: these devices are not q101 qualified.) mechanical data case: do-214ac (sma) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 2 a v rrm 20 v, 30 v, 40 v i fsm 40 a v f at i f = 2.0 a 0.517 v t j max. 150 c do-214ac (sma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss22s ss23s ss24s unit device marking code 22s 23s 24s v maximum repetitive peak reverse voltage v rrm 20 30 40 v maximum average forward rectified current (fig. 1) i f(av) 2.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 40 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 55 to + 150 c
new product ss22s, ss23s & ss24s vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89008 revision: 19-may-08 2 notes: (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note : (1) p.c.b. mounted with 0.4 x 0.4" (10 x 10 mm) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ max. unit instantaneous forward voltage (1) i f = 1 a, i f = 2 a, t j = 25 c v f 0.436 0.517 - 0.55 v reverse current (2) rated v r t j = 25 c t j = 100 c i r 13 1.65 200 8 a ma typical junction capacitance 4.0 v, 1 mhz c j 130 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss22s ss23s ss24s unit typical thermal resistance (1) r ja r jl 75 25 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ss24s-e3/61t 0.064 61t 1800 7" di ameter plastic tape and reel ss24s-e3/5at 0.064 5at 7500 13" diameter plastic tape and reel figure 1. forward current derating curve 2.4 2.0 1.6 1.2 0. 8 0.4 0 0 25 50 75 100 125 150 175 p. c . b . m o u nted on 0.4 x 0.4" (10 x 10 mm) copper pad areas resisti v e or ind u cti v e load a v erage for w ard re ctified c u rrent (a) lead temperat u re (c) figure 2. forward power loss characteristics d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 1.2 1.0 0. 8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = t p /t t p t
new product ss22s, ss23s & ss24s vishay general semiconductor document number: 89008 revision: 19-may-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. maximum non-repetitive peak forward surge current figure 4. typical instantaneous forward characteristics 50 40 30 20 10 0 0 10 100 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) at rated t l 8 .3 ms single half sine- w a v e 100 10 1 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 t j = 150 c t j = 125 c t j = 25 c instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) figure 5. typical reverse leakage characteristics figure 6. typical junction capacitance t j = 150 c t j = 125 c t j = 25 c 100 000 10 000 1000 100 10 10 20 30 40 50 60 70 8 0 90 100 1 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) 100 10 10 100 1000 0.1 1 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) mountin g pad layout 0.074 (1. 88 ) max. 0.20 8 (5.2 8 ) ref. 0.066 (1.6 8 ) mi n . 0.060 (1.52) mi n .
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