pnp silicon planar medium power high voltage transistors issue 1 ? july 94 features * 300 volt v ceo * 0.5 amp continuous current *p tot = 1 watt absolute maximum ratings. parameter symbol ztx556 ZTX557 unit collector-base voltage v cbo -200 -300 v collector-emitter voltage v ceo -200 -300 v emitter-base voltage v ebo -5 v peak pulse current i cm -1 a continuous collector current i c -0.5 a power dissipation p tot 1.0 w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx556 ZTX557 unit conditions. min. max min. max collector-base breakdown voltage v (br)cbo -200 -300 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -200 -300 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 -5 v i e =-100 m a collector cut-off current i cbo -0.1 -0.1 m a m a v cb =-160v v cb =-200v emitter cut-off current i ebo -0.1 -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.3 -0.3 v i c =-50ma, i b =-5ma* base-emitter saturation voltage v be(sat) -1 -1 v i c =-50ma, i b =-5ma* base-emitter turn-on voltage v be(on) -1 -1 v ic=-50ma, v ce =-10v* static forward current transfer ratio h fe 50 50 300 50 50 300 i c =-10ma, v ce =-10v* i c =-50ma, v ce =-10v* transition frequency f t 75 75 mhz i c =-50ma, v ce =-10v f=100mhz ztx556 ZTX557 3-200 c b e e-line to92 compatible typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (sat) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h fe - normalised gain (%) v b e (sat) - (v olts) v b e - ( v olts) i c - colle c tor curre n t ( amps) v ce - collector voltage (volts) safe operating area 11 0 0 0 10 100 0.001 0.01 0.1 1.0 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 100s 20 40 60 80 100 0 -1 -0.2 -0.4 -0.6 -0.8 switching speeds i c - collector current (amps) switching t i m e -0.0001 -0.001 -0.01 -0.1 i c /i b =10 -0.0001 -0.001 1 -0.01 -0.1 -0.01 tr s 1.0 0.5 1.5 2.0 0 td ns 100 50 0 ztx556 zt x 5 5 7 -0.6 -0.0001 -0.001 -1 -0.01 -0.1 -0.8 -1.0 -1.2 -1.4 tf s 2 1 3 4 0 ts s 8 4 12 16 0 14 10 6 2 -0.1 ts tf td tr v ce =-10v 0 -0.6 -1 -0.0001 -0.001 -0.01 -0.1 i c /i b =10 -1.0 -1.2 -1.4 -0.8 v ce =-10v i b1 =i b2 =i c /10 ztx556 ZTX557 3-201 ztx556 not recommended for new design please use ZTX557
pnp silicon planar medium power high voltage transistors issue 1 ? july 94 features * 300 volt v ceo * 0.5 amp continuous current *p tot = 1 watt absolute maximum ratings. parameter symbol ztx556 ZTX557 unit collector-base voltage v cbo -200 -300 v collector-emitter voltage v ceo -200 -300 v emitter-base voltage v ebo -5 v peak pulse current i cm -1 a continuous collector current i c -0.5 a power dissipation p tot 1.0 w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ztx556 ZTX557 unit conditions. min. max min. max collector-base breakdown voltage v (br)cbo -200 -300 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -200 -300 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 -5 v i e =-100 m a collector cut-off current i cbo -0.1 -0.1 m a m a v cb =-160v v cb =-200v emitter cut-off current i ebo -0.1 -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.3 -0.3 v i c =-50ma, i b =-5ma* base-emitter saturation voltage v be(sat) -1 -1 v i c =-50ma, i b =-5ma* base-emitter turn-on voltage v be(on) -1 -1 v ic=-50ma, v ce =-10v* static forward current transfer ratio h fe 50 50 300 50 50 300 i c =-10ma, v ce =-10v* i c =-50ma, v ce =-10v* transition frequency f t 75 75 mhz i c =-50ma, v ce =-10v f=100mhz ztx556 ZTX557 3-200 c b e e-line to92 compatible typical characteristics v ce(sat) v i c i c - collector current (amps) v c e (sat) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h fe - normalised gain (%) v b e (sat) - (v olts) v b e - ( v olts) i c - colle c tor curre n t ( amps) v ce - collector voltage (volts) safe operating area 11 0 0 0 10 100 0.001 0.01 0.1 1.0 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 100s 20 40 60 80 100 0 -1 -0.2 -0.4 -0.6 -0.8 switching speeds i c - collector current (amps) switching t i m e -0.0001 -0.001 -0.01 -0.1 i c /i b =10 -0.0001 -0.001 1 -0.01 -0.1 -0.01 tr s 1.0 0.5 1.5 2.0 0 td ns 100 50 0 ztx556 zt x 5 5 7 -0.6 -0.0001 -0.001 -1 -0.01 -0.1 -0.8 -1.0 -1.2 -1.4 tf s 2 1 3 4 0 ts s 8 4 12 16 0 14 10 6 2 -0.1 ts tf td tr v ce =-10v 0 -0.6 -1 -0.0001 -0.001 -0.01 -0.1 i c /i b =10 -1.0 -1.2 -1.4 -0.8 v ce =-10v i b1 =i b2 =i c /10 ztx556 ZTX557 3-201 ztx556 not recommended for new design please use ZTX557
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