tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, e erse 0790 nited tates of america .americanmicrosemi.com 2016 american microsemiconductor, inc.? ecifications are suect to cange itout notice american microsemiconductor, inc. reseres rigt to mae canges to te roduct secifications and data in tis document itout notice. american microsemiconductor, inc. disclaims all and an arrant and liailit arising out of use or alication of an roduct. o license, exress or imlied to an intellectual roert rigts is granted tis document. nless oterise exressl indicated, american microsemiconductor, inc. roducts are not designed, tested or autoried for use in life - saing, medical, aircraft naigation, communication, air traffic control and eaons sstems, nor in alications ere teir failure ma result in deat, ersonal inur andor roert damage. dekra certification inc. as9100c and iso 9001:2008 c ertificate no. 131519.01 ocument age 1 of 2 revised 05/2016 ? AMS65R180 n- channel super junction power mosfet general description the series of devices use advanced super junction technology and design to provide excellent r ds(on) with low gate charge. this super junction mosfet fits the industry?s ac - dc smps requirements for pfc, ac/dc power conversion, and industrial power applications. features new technology for high voltage device low on - resistance and low conduction losses small package ultra low gate charge cause lower driving requirements 100% avalanche tested rohs compliant application power factor correction pfc switched mode power supplies(smps) uninterruptible power supply ups v ds 650 v r ds(on) max 180 m schematic diagram package marking and ordering information device device package marking AMS65R180 marking 65r180 table 1. absolute maximum ratings (t c =25 symbol ams 65r180 unit parameter v ds 650 v drain - source voltage ( v gs= 0v v gs 30 v gate - source voltage ( v ds= 0v) continuous drain current at tc=25c i d (dc) 21 a continuous drain current at tc=100c i d (dc) 13.2 a pulsed drain current (note 1) i dm (pluse) 63 a maximum power dissipation(tc=25 (note 2) e as 690 mj avalanche current (note 1) i ar 7 a repetitive avalanche energy t ar limited by t jmax (note 1) e ar 1 mj
tel. 1 - 973 - 377 - 9566 fax. 1 - 973 - 377 - 3078 133 kings road madison, e erse 0790 nited tates of america .americanmicrosemi.com 2016 american microsemiconductor, inc.? ecifications are suect to cange itout notice american microsemiconductor, inc. reseres rigt to mae canges to te roduct secifications and data in tis document itout notice. american microsemiconductor, inc. disclaims all and an arrant and liailit arising out of use or alication of an roduct. o license, exress or imlied to an intellectual roert rigts is granted tis document. nless oterise exressl indicated, american microsemiconductor, inc. roducts are not designed, tested or autoried for use in life - saing, medical, aircraft naigation, communication, air traffic control and eaons sstems, nor in alications ere teir failure ma result in deat, ersonal inur andor roert damage. dekra certification inc. as9100c and iso 9001:2008 c ertificate no. 131519.01 ocument age 2 of 2 revised 05/2016 ? AMS65R180 parameter symbol ams 65r180 unit drain source voltage slope, vds 480 v, dv/dt 50 v/ns reverse diode dv/dt vds480 v,isd |
