1.8mm package npn phototransistor MID-18422 description package dimensions the MID-18422 is a npn silicon phototransistor mou- nted in a lensed , water clear plastic package.the lens- ing effect of the package allows an acceptance view angle of 35 o that is measured from the optical axis to the half power point . features l wide range of collector current l lensed for high sensitivity l low cost plastic package absolute maximum ratings @ t a =25 o c parameter maximum rating unit power dissipation 100 mw collector-emitter voltage 30 v emitter-collector voltage 5 v operating temperature range storage temperature range lead soldering temperature 02/04/2002 -55 o c to +100 o c -55 o c to +100 o c 260 o c for 5 seconds notes : 1. tolerance is 0.25mm (.010") unless otherwise noted . 2. protruded resin under flange is 0.8 mm (.031") max 3. lead spacing is measured where the leads emerge from the package. unit : mm (inches ) unity opto technology co., ltd. 3.30 (.130) 2.54 nom. (.100) 0.50 typ. (.020) 1.40 (.055) see note 2 1.00min. (.040) 25.40min. (1.000) see note 3 3.00 (.118) 1.60 (.063) 2.40 (.094) f 1.80 (.071) r 1.70 (.067) c e
MID-18422 . optical-electrical characteristics @ t a =25 o c parameter test conditions symbol min. typ . max. unit collector-emitter i c =0.1ma v (br)ceo 30 v breakdown voltage ee=0 emitter-collector ie=0.1ma v (br)eco 5 v breakdown voltage ee=0 collector-emitter i c =0.5ma v ce(sat) 0.4 v saturation voltage ee=0.1mw/cm 2 rise time v cc =5v, r l =1k w tr 15 m s fall time i c =1ma tf 15 collector dark v ce =10v i ceo 100 na current ee=0 on state collector v ce =5v i c(on) 2.2 ma current ee=0.1mw/cm 2 typical optical-electrical characteristic curves 02/04/2002 unity opto technology co., ltd. 0.001 0.01 0.1 1 10 100 1000 0 40 80 120 0 40 80 120 160 200 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -75 -25 25 75 125 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 0.6 relative collector current (ma) fig.6 sensitivity diagram 1.0 0.9 0.8 relative sensitivity 0 10 20 0.5 0.3 0.1 0.2 0.4 0.6 tr tf rise and fall time - m s i c normalized collector current iceo-collector dark current - m a vce = 5 v vce = 5 v ee = 0.1 mw/cm 2 @ l = 850 nm vcc = 5 v v rl = 1 v f = 100 hz pw = 1 ms t a - ambient temperature - o c fig.1 collector dark current vs ambient temperature rl - load resistance - k w fig.3 rise and fall time vs load resistance t a - ambient temperature - o c fig.2 normalized collector current vs ambient temperature ee - irradiance - mw/cm 2 fig.4 relative collector current vs irradiance 30 90 70 60 50 80 40
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