1 10.2 0.2 1.3 0.2 8.9 0.3 0.8 0.1 5.0 0.5 1.4 0.2 4.5 0.2 0.5 0.2 0.4 0.1 pin 13.2 0.5 1.3 0.1 1 3 2 2 4 0.1 0.1 features m e t a l - s e m i c o n d u c t or j u n c t i o n w i t h g u a r d r i n g d 2 pak epitaxial construction low forward voltage drop,low switching losses high surge capability mechanical data c a s e : j e d e c d 2 pak , m o l d ed p l a s t i c t e r m i n a l s : s o l d e r a b l e per m i l - s t d - 7 5 0 , m e t h o d 2 0 2 6 polarity: as marked w e i g h t : 0.052 ounces,1.47 grams mounting position: any ratings at 25 a m b i e n t t e m p e r a t u r e u n l e s s o t h e r w i s e s p e c i f i e d . s i n g l e p h a s e , h a l f w a v e , 6 0 h z , r e s i s t i v e o r i n du c t i v e l o a d . f o r c a p a c i t i v e l o a d , d e r a te b y 2 0 % . s bl b sbl b sbl b sbl b sbl b sbl b sbl b sbl b sbl b sbl b 83 0 835 840 845 850 860 87 0 880 890 8100 u n i t s maximum recurrent peak reverse voltage v r r m v ma x imu m rms v o l t a g e v r m s v ma x imu m dc bl oc ki ng v o lt a g e v dc v maximum average f orw ard rectified current t c =95 peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load t j =125 maximum instantaneous forw ard voltage @ 8.0 a v f v maximum reverse current @t c = 2 5 at rated dc blocking voltage @t c = 1 0 0 t y p i c a l t he r m a l r e s i s t a n c e ( n o t e 1 ) r jc /w operating junction temperature range t j storage temperature range t stg n o t e: 1 . thermal resistance junction to case. - 5 5 - -- + 1 50 30 35 40 45 50 60 70 80 90 100 i fsm 30 35 40 45 50 60 70 80 90 100 21 25 28 32 35 42 49 56 63 70 ma i r 0.5 a - 5 5 - -- + 1 5 0 6.9 0 . 55 0.70 0.85 200 55 s bl b 8 3 0---s bl b 8 100 a f o r u s e i n l ow v o l t a g e , h i gh f re q u e n c y i n v e r t e r s f ree xxxx wheeling,and polarity protection applications i f(av) s c h o tt k y b arr i e r r e c t i fi e r s v o l t a g e r a nge: 3 0 - - - 10 0 v curr e n t : 8.0 a the plastic material carries u/l recognition 94v-0 8.0 maximum ratings and electrical characteristics dimensions in millimeters diode semiconductor korea www.diode.kr
t j =25 pulse width=300 s 1 % d u ty c ycle . 2 . 4 . 6 . 8 1.0 1 . 2 1 . 4 1 . 6 1 . 8 2.0 2.2 1 1 0 1 0 0 2 0 0 SBLB830-sblb845 sblb850-sblb860 sblb870-sblb8100 10 04060 20 100 120 140 80 t c = 2 5 . 1 1 . 0 1 tc=100 0 2.0 4.0 25 50 75 100 125 150 6.0 8.0 10 0 40 1 100 200 80 12 0 160 10 8.3ms single half sine wave t j =125 amperes average forward output current, amperes fi g. 3 -- typical forward characteri sti c f i g . 4 - - t y p i c al r e v e r s e c h ara c t e r i s t i c i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s nu m be r o f c y c l e s a t 6 0 h z case t e m pe r a t ur e , instantaneous forward current, peak forward surge current, f i g . 2 - - f o r w ard d e ra t i n g cur v e amperes mi ll amperes percent of rated peak reverse voltage fi g. 1 -- peak forward surge current instantaneous reverse current, SBLB830---sblb8100 www.diode.kr diode semiconductor korea
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