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| savantic semiconductor product specification silicon npn power transistors 2SD2300 d escription with to-3pfm package high breakdown voltage built-in damper diode applications for color tv horizontal output deflection applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a i cm collector current-peak 6 a i c( surge ) collector surge current 16 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pfm) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SD2300 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =350ma , i c =0 6 v v ce(sat) collector-emitter saturation voltage i c =4.5a ; i b =1.2a 5.0 v v be(sat) base-emitter saturation voltage i c =4.5a ; i b =1.2a 1.5 v i ces collector cut-off current v ce =1500v; r be =0 500 a h fe dc current gain i c =1a ; v ce =5v 20 t f fall time i c =4a ; i b1 =0.8a; i b2 = -1.5a 1.0 s v f diode forward voltage i f =6a 3.0 v downloaded from: http:/// savantic semiconductor product specification 3 silicon npn power transistors 2SD2300 package outline fig.2 outline dimensions downloaded from: http:/// |
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