data sheet 1 of 8 rev. 05.2, 2016-06-08 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! ptva035002ev thermally-enhanced high power rf ldmos fet 500 w, 50 v, 390 C 450 mhz description the ptva035002ev ldmos fet is designed for use in power ampli - fer applications in the 390 mhz to 450 mhz frequency band. features include high gain and thermally-enhanced package with bolt-down fange. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. ptva035002ev package h-36275-4 features ? unmatched input and output ? high gain and effciency ? integrated esd protection ? human body model class 2 (per ansi/esda/ jedec js-001) ? low thermal resistance ? pb-free and rohs-compliant ? capable of withstanding a 13:1 load mismatch at 57 dbm under pulsed conditions: 12 sec pulse width, 10% duty cycle rf characteristics pulsed cw class ab characteristics (not subject to production test, verifed by design/characterization in infneon test fxture) v dd = 50 v, i dq = 0.5 a, p out = 500 w, ? = 450 mhz, 12 sec pulse width, 10% duty cycle characteristic symbol min typ max unit gain g ps 18 db drain efficiency h d 64 % 25 35 45 55 65 75 85 10 12 14 16 18 20 22 48 50 52 54 56 58 60 drain efficiency (%) gain (db) output power (dbm) pulsed cw performance 450 mhz, v d = 50 v, i dq = 0.5 a, 12 sec pulse width, 10% duty cycle gain efficiency gain efficiency a035002 gr 1
ptva035002ev data sheet 2 of 8 rev. 05.2, 2016-06-08 rf characteristics pulsed cw characteristics (tested in infneon test fxture) v dd = 50 v, v gs = 2.9 v, i dq = 0.0 a, p out = 500 w, ? = 450 mhz, 12 sec pulse width, 10% duty cycle characteristic symbol min typ max unit gain g ps 14.75 15.5 db drain efficiency h d 63 66 % dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 105 v drain leakage current v ds = 50 v, v gs = 0 v i dss 1.0 a v ds = 105 v, v gs = 0 v i dss 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.1 w operating gate voltage v ds = 50 v, i dq = 600 ma v gs 3.70 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 105 v gate-source voltage v gs C6 to +12 v junction temperature t j 200 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, 300 w cw) r qjc 0.20 c/w ordering information type and version order code package description shipping ptva035002ev v1 r0 ptva035002evv1r0xtma1 h-36275-4, bolt-down tape & reel, 50pcs ptva035002ev v1 r250 PTVA035002EVV1R250xtma1 h-36275-4, bolt-down tape & reel, 250pcs
data sheet 3 of 8 rev. 05.2, 2016-06-08 ptva035002ev typical performance (data taken in production test fixture) 50 60 70 80 14 16 18 20 f iciency (%) n (db) power sweep, pulsed cw v dd = 50 v, v g = 2.9 v, 12 sec pulse width, 10% duty cycle, power optimized gain 20 30 40 8 10 12 48 50 52 54 56 58 60 drain ef f gai output power (dbm) efficiency 450 mhz 420 mhz 390 mhz a035002 gr 3-1 50 60 70 80 14 16 18 20 f iciency (%) n (db) power sweep, pulsed cw 12 sec pulse width, 10% duty cycle v dd = 50 v, v g = 2.9 v, efficiency optimized gain efficiency 20 30 40 8 10 12 48 50 52 54 56 58 60 drain ef f gai output power (dbm) 450 mhz 420 mhz 390 mhz a035002ev_gr3-2 16 20 (db) pulsed cw gain v dd = 50 v, 450 mhz, 12 sec pulse width, 10% duty cycle, series show i dq i dq = 0.02 a 0.5 a 1.5 a 8 12 48 50 52 54 56 58 60 gain output power (dbm) a03500 gr 3-4 50 60 70 80 14 16 18 20 ciency (%) n (db) pulsed cw performance v gg = 2.9 v, 450 mhz, 2 sec pulse width, 10% duty cycle, for selected v dd v dd = 50 v v dd = 40 v v dd = 30 v gain 20 30 40 8 10 12 45 47 49 51 53 55 57 59 drain effi gai output power (dbm) efficiency a035002 gr 3
ptva035002ev data sheet 4 of 8 rev. 05.2, 2016-06-08 50 60 70 80 e ncy (%) pulsed cw efficiency v d = 50 v, 450 mhz, 12 sec pulse width, 10% duty cycle, series show i dq 0.5 a i dq = 0.02 a 20 30 40 48 50 52 54 56 58 60 effici e output power (dbm) 1.5 a a035002 gr 6 frequency z source w z load w mhz r jx r jx 390 1.28 C0.12 1.80 C2.22 405 1.35 0.18 1.86 C1.91 420 1.43 0.48 1.92 C1.62 435 1.54 0.76 1.98 C1.35 450 1.67 1.04 2.02 C1.11 typical performance (cont.) broadband circuit impedance
data sheet 5 of 8 rev. 05.2, 2016-06-08 ptva035002ev reference circuit, 390 C 450 mhz reference circuit assembly diagram (not to scale)* ptva 035002 _in_03 tmm 10, .050 (63) p t v a 0 3 5 0 0 2 e v _ c d _ 0 7 - 0 8 - 2 0 1 3 tmm 10, .050 (63) ptva 035002 _out _03 c 102 rf_in rf_out s 1 v dd c 101 c 103 c 105 c 104 c 106 c 107 c 109 r102 r101 r104 c 204 c 206 c 208 c 207 c 209 r802 r801 r803 r805 r804 r806 c 202 c 201 c 203 c 210 c 212 r108 r105 r106 r103 r110 r109 r112 r113 r114 r111 r107 r807 c 801 c 802 c 803 + c 108 s2 s1 s3 c 211 s2 s1 c 205 4 5 3 1 2 6 ptva035002ev v dd v dd find gerber fles for this test fxture on the infneon web site at www.infneon.com/rfpower
ptva035002ev data sheet 6 of 8 rev. 05.2, 2016-06-08 reference circuit (cont.) reference circuit assembly dut ptva035002ev test fixture part no. ltn/ptva035002ev pcb rogers tmm10, 1.27 mm [0.050"] thick, 2 oz. copper, r = 9.2 components information component description suggested manufacturer p/n input c101, c102, c104 capacitor, 300 pf atc atc100b301kw200x c103, c108 capacitor, 20 pf atc atc100b200kw500x c105, c106, c801, c802, c803 capacitor, 1000 pf panasonic electronic components ecj-1vb1h102k c107, c109 capacitor, 6.2 pf atc atc100b6r2ct500x r101, r102, r103, r104, r105, r106, r109, r110, r111, r112, r113, r114 resistor, 5.6 w panasonic electronic components erj-8geyj5r6v r107, r108 resistor, 1000 w panasonic electronic components erj-8geyj102v r801 resistor, 100 w panasonic electronic components erj-8geyj101v r802 resistor, 2000 w panasonic electronic components erj-8geyj202v r803 resistor, 3600 w panasonic electronic components erj-8geyj362v r804 resistor, 1300 w panasonic electronic components erj-3geyj132v r805 resistor, 1200 w panasonic electronic components erj-3geyj122v r806 resistor, 2400 w panasonic electronic components erj-8geyj242v r807 resistor, 6200 w panasonic electronic components erj-8geyj622v s1 transistor infneon technologies bcp56 s2 voltage regulator texas instruments lm7805 s3 potentiometer bourns inc. 3224w-1-202e output c201, c206, c209 capacitor, 300 pf atc atc100b301kw200x c202 capacitor, 3 pf atc atc100b3r0cw500x c203, c204 capacitor, 4.3 pf atc atc100b4r3cw500x c205, c211 capacitor, 100 f united chemi-con emve101ara101mke0s c207, c212 capacitor, 10 f tdk corporation c5750x7s2a106m230kb c208, c210 capacitor, 2.2 f tdk corporation c4532x7r2a225k230ka s1, s2 inductor, 17.5 nh coilcraft b06tglb
data sheet 7 of 8 rev. 05.2, 2016-06-08 s 35 . 56 [1. 400 ] 4x 11 . 68 [. 460 ] c l d1 g1 d2 2 x 45 x 1. 19 [45 x . 047 ] 10 . 16 [. 400 ] 9. 144 [. 360 ] c l c 2 x 2 . 03 [. 080 ] ref 13. 72 [. 540 ] 16 . 612 0.500 [. 654 . 020 ] 2x r1. 59 [r . 062 ] 3. 23 0. 51 [. 127 . 020 ] 8x r0. 51 +0. 13 - 0. 51 [ r . 020 +. 005 - . 020 ] g2 l c l 41. 15 [1 . 620 ] 31. 242 0. 280 [1. 230 . 011 ] 1. 63 [. 064 ] 2. 13 [. 084 ] sph [ c l c l c l 4. 58 +0. 25 - 0. 13 . 180 +. 010 - . 005 ] h - 36275 - 4 _po _01 _10 - 22 - 2012 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.127 0.051 mm [0.005 0.002 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. package outline specifications package h-36275-4 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 - drain, g1, g2 - gate, s - source. 5. lead thickness: 0.127 +0.051/C0.025 [.005 +.002/C.001]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch].
|
