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april 2017 docid027355 rev 3 1 / 16 this is information on a product in full production. www.st.com STGP30M65DF2 trench gate field - stop igbt, m series 650 v, 30 a low - loss in a to - 220 package datasheet - production data figure 1 : internal schematic diagram features ? 6 s of minimum short - circuit withstand time ? v ce(sat) = 1.55 v (typ.) @ i c = 30 a ? tight parameters distribution ? safer paralleling ? low thermal resistance ? soft and very fast recov ery antiparallel diode applications ? motor control ? ups ? pfc description this device is an igbt developed using an advanced proprietary trench gate field - stop structure. the device is part of the m series of igbts, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low - loss and short - c ircuit capability are essential. furthermore, a positive v ce(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. table 1: device summary order code marking package packaging STGP30M65DF2 g30m65df2 to - 220 tube 1 2 3 t o-220 tab
contents STGP30M65DF2 2 / 16 docid027355 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ................... 11 4 package information ................................ ................................ ..... 12 4.1 to - 220 type a package information ................................ ................ 13 5 revision hist ory ................................ ................................ ............ 15
STGP30M65DF2 electri cal ratings docid027355 rev 3 3 / 16 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ces collector - emitter voltage (v ge = 0 v) 650 v i c continuous collector current at t c = 25 c 60 a i c continuous collector current at t c = 100 c 30 a i cp (1) pulsed collector current 120 a v ge gate - emitter voltage 20 v i f continuous forward current at t c = 25 c 60 a i f continuous forward current at t c = 100 c 30 a i fp (1) pulsed forward current 120 a p tot total dissipation at t c = 25 c 258 w t stg storage temperature range - 55 to 150 c t j operating junction temperature range - 55 to 175 c notes: (1) pulse width limited by maximum junction temperature. table 3: thermal data symbol parameter value unit r thjc thermal resistance junction - case igbt 0.58 c/w r thjc thermal resistance junction - case diode 1.47 c/w r thja thermal resistance junction - ambient 62.5 c/w
electrical characteristics STGP30M65DF2 4 / 16 docid027355 rev 3 2 electrical characteristics t c = 25 c unless otherwise specified table 4: static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector - emitter breakdown voltage v ge = 0 v, i c = 250 a 650 v v ce(sat) collector - emitter saturation voltage v ge = 15 v, i c = 30 a 1.55 2.0 v v ge = 15 v, i c = 30 a, t j = 125 c 1.95 v ge = 15 v, i c = 30 a, t j = 175 c 2.1 v f forward on - voltage i f = 30 a 1.85 2.65 v i f = 30 a, t j = 125 c 1.6 i f = 30 a, t j = 175 c 1.5 v ge(th) gate threshold voltage v ce = v ge , i c = 500 a 5 6 7 v i ces collector cut - off current v ge = 0 v, v ce = 650 v 25 a i ges gate - emitter leakage current v ce = 0 v, v ge = 20 v 250 a table 5: dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 v - 2490 - pf c oes output capacitance - 143 - c res reverse transfer capacitance - 46 - q g total gate charge v cc = 520 v, i c = 30 a, v ge = 0 to 15 v (see figure 30: " gate charge test circuit" ) - 80 - nc q ge gate - emitter charge - 18 - q gc gate - collector charge - 32 -
STGP30M65DF2 electrical characteristics docid027355 rev 3 5 / 16 table 6: igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v ce = 400 v, i c = 30 a, v ge = 15 v, r g = 10 (see figure 2 9: " test circuit for inductive load switching" ) 31.6 - ns t r current rise time 13.4 - ns (di/dt) on turn - on current slope 1791 - a/s t d(off) turn - off - delay time 115 - ns t f current fall time 110 - ns e on (1) turn - on switching energy 0.3 - mj e off (2) turn - off switching energy 0.96 - mj e ts total switching energy 1.26 - mj t d(on) turn - on delay time v ce = 400 v, i c = 30 a, v ge = 15 v, r g = 10 , t j = 175 c (see figure 29: " test circuit for inductive load switching" ) 30 - ns t r current rise time 17 - ns (di/dt) on turn - on current slope 1435 - a/s t d(off) turn - off - delay time 116 - ns t f current fall time 194 - ns e on (1) turn - on switching energy 0.67 - mj e off (2) turn - off switching energy 1.36 - mj e ts total switching energy 2.03 - mj t sc short - circuit withstand time v cc 400 v, v ge = 13 v, t jstart = 150 c 10 - s v cc 400 v, v ge = 15 v, t jstart = 150 c 6 - notes: (1) including the reverse recovery of the diode. (2) including the tail of the collector current. table 7: diode switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 30 a, v r = 400 v, v ge = 15 v, di/dt = 1000 a/s (see figure 29: " test circuit f or inductive load switching" ) - 140 - ns q rr reverse recovery charge - 880 - nc i rrm reverse recovery current - 17 - a di rr /dt peak rate of fall of reverse recovery current during t b - 650 - a/s e rr reverse recovery energy - 115 - j t rr reverse recovery time i f = 30 a, v r = 400 v, v ge = 15 v, di/dt = 1000 a/s, t j = 175 c (see figure 29: " test circuit for inductive load switching" ) - 244 - ns q rr reverse recovery charge - 2743 - nc i rrm reverse recovery current - 25 - a di rr /dt peak rate of fall of reverse recovery current during t b - 220 - a/s e rr reverse recovery energy - 320 - j
electrical characteristics STGP30M65DF2 6 / 16 docid027355 rev 3 2.1 electrical characteristics (curves) figure 2 : power dissipation vs. case temperature figure 3 : collector current vs. case temperature figure 4 : output characteristics (t j = 25 c) figure 5 : output characteristics (t j = 175 c) figure 6 : v ce(sat) vs. junction temperature figure 7 : v ce(sat) vs. collector current v ce(sat) 2 1 0 i c (a) (v) 60 20 40 3 80 v ge = 15v t j = -40c 0 4 5 100 t j = 25c t j = 175c gipd28102013 11 16fsr i c 30 20 10 0 -50 0 t c (c) (a) 100 40 50 50 150 v ge 15v, t j 175 c 60 gipd100420150959fsr p tot 150 100 50 0 -50 0 t c (c) (w) 100 200 50 250 150 v ge 15v, t j 175 c gipd100420150947fsr i c 20 0 0 1 v ce (v) (a) 4 40 2 3 v ge =15v 60 9v 1 1v 13v 5 80 100 7v gipd100420151025fsr i c 20 0 0 1 v ce (v) (a) 4 40 2 3 v ge =15v 60 9v 1 1v 13v 5 80 100 gipd100420151008fsr v ce(sat) 1.8 1.4 -50 t j (c) (v) 100 0 50 2.2 150 v ge = 15v i c = 60 a i c = 30 a i c = 15 a 1 2.6 3 gipd281020131418fsr
STGP30M65DF2 electrical char acteristics docid027355 rev 3 7 / 16 figure 8 : collector current vs. switching frequency figure 9 : forward bias safe operating area figure 10 : transfer characteristics figure 11 : diode v f vs. forward current figure 12 : normalized v ge(th) vs. junction temperature figure 13 : normalized v (br)ces vs. junction temperature 10 20 30 40 1 10 i c [ a ] f [ k h z] g ? re c t a n g ula r cu rre n t s hap e, ( du t y c y cl e= 0 . 5 , v cc = 400 v, r =10 , v g e = 0 / 15 v , t j = 17 5 c) tc= 8 0 c tc= 10 0 c 50 60 gipd10042015 1 129fsr v (br)ces 1.1 1.05 -50 t j (c) (norm) 0 50 100 150 i c = 250 a 0.9 0.95 1.0 gipd100420151240fsr v ge(th) 1.1 1.0 -50 t j (c) (norm) 0 50 100 150 i c = 500 a v ce = v ge 0.7 0.8 0.9 gipd100420151232fsr v f 1.5 1 0.5 0 0 i f (a) (v) 20 t j = 175c 40 60 80 t j = 25c t j = -40c 100 3 2.5 2 gipd100420151209fsr i c 60 40 20 0 6 7 v ge (v) (a) 10 80 8 9 100 1 1 5 v ce = 5v t j = 25 c t j = 175 c gipd10042015 1 152fsr i c 100 10 1 1 v ce (v) (a) 10 1 s 10 s 1 ms single pulse t c= 25c, t j 175c v ge = 15v 100 100 s gipd10042015 1 137fsr
electrical characteristics STGP30M65DF2 8 / 16 docid027355 rev 3 figure 14 : capacitance variations figure 15 : gate charge vs. gate - emitter voltage figure 16 : switching energy vs. collector current figure 17 : switching energy v s. gate resistance figure 18 : switching energy vs. temperature figure 19 : switching energy vs. collector emitter voltage c 10 v ce (v) (pf) 0.1 1 10 c ies 100 1000 c oes c res 100 f= 1mhz gipd100420151249fsr v ge 8 0 q g (nc) (v) 0 20 i c = 30 a i g = 1m a v cc = 520v 4 40 12 60 16 80 gipd100420151257fsr e 0 i c (a) (mj) 0 10 20 1 30 40 2 e on 3 v cc = 400 v , v ge = 15 v , r g = 10, t j = 175c 50 e o f f 60 4 e tot gipd100420151322fsr e 0 r g () (mj) 0 20 40 1 2 3 60 80 4 e o f f v cc = 400 v , v ge = 15 v , i c = 30 a, t j = 175 c e on e tot 100 gipd100420151328fsr e 0 v ce (v) (mj) 150 0.5 1 1.5 e o f f t j = 175c, v ge = 15 v , r g = 10, i c = 30 a 2 2.5 250 350 450 e tot e on gipd100420151340fsr e 0 t j (c) (mj) 0 50 0.5 1 1.5 100 150 e o f f v cc = 400 v , v ge = 15 v , r g = 10, i c = 30 a e on 2 e tot gipd100420151336fsr
STGP30M65DF2 electrical characteristics docid027355 rev 3 9 / 16 figure 20 : short - circuit time and current vs. v ge figure 21 : switching times vs. collector current figure 22 : switching times vs. gate resistance figure 23 : reverse recovery current vs. diode current slope figure 24 : reverse recovery time vs. diode current slope figure 25 : reverse recovery charge vs. diode current slope i rm 15 di/dt(a/s) (a) 200 600 1000 25 1400 i f = 30a, v cc = 400v v ge = 15v 1800 30 =175c 35 20 t j 40 gipd100420151417fsr t r g () (ns) 0 20 40 10 60 t f t j = 175c, v ge = 15 v , i c = 30a, v cc = 400v 80 100 t d(on) t d(o f f) t r gipd100420151412fsr t i c (a) (ns) 0 10 20 1 30 t f t j = 175c, v ge = 15 v , r g = 10, v cc = 400v 10 t r t d(on) 40 50 100 t d(o f f) gipd100420151403fsr t sc 15 10 5 10 v ge (v) 12 (s) 1 1 v cc 40 0 v , t j 150c 0 t sc i sc 13 20 i sc (a) 60 30 90 120 14 15 9 150 gipd100420151351fsr t rr 180 di/dt(a/s) (ns) 200 600 1000 220 1400 i f = 30a, v cc = 400 v , v ge = 15v 1800 240 =175c 260 200 t j 280 gipd100420151434fsr q rr 2.5 di/dt(a/s) (c) 200 600 1000 2.8 1400 i f = 30a, v cc = 400 v , v ge = 15v 1800 2.9 =175c 2.7 t j 2.6 gipd100420151442fsr
electrical characteristics STGP30M65DF2 10 / 16 docid027355 rev 3 figure 26 : reverse recovery energy vs. diode current slope figure 27 : thermal impedance for igbt figure 28 : thermal impedance for diode e rr 0.18 di/dt(a/s) (mj) 200 600 1000 0.3 1400 i f = 30a, v cc = 400 v , v ge = 15v 1800 0.38 =175c 0.22 t j 0.26 0.34 gipd100420151455fsr 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zth t o2t_b
STGP30M65DF2 test circuits docid027355 rev 3 11 / 16 3 test circuits figure 29 : test circuit for inductive load switching figure 30 : gate charge test circuit figure 31 : switching waveform figure 32 : diode reverse recovery waveform a a c e g b r g + - g c 3 . 3 f 1 0 0 0 f l = 1 00 h v cc e d . u . t b a m 0 15 0 4 v 1 t am01507v1 10% v rrm dv/dt di/dt i rrm i f t rr t s t f q rr i rrm
package information STGP30M65DF2 12 / 16 docid027355 rev 3 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compli ance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STGP30M65DF2 package information docid027355 rev 3 13 / 16 4.1 to - 220 type a package information figure 33 : to - 220 type a package outline
package information STGP30M65DF2 14 / 16 docid027355 rev 3 table 8: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13.00 14.00 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
STGP30M65DF2 revision history docid027355 rev 3 15 / 16 5 revision history table 9: document revision history date revision changes 10 - feb - 2015 1 first release. 13 - apr - 2015 2 document status promoted from preliminary to production data. updated features in cover page. updated section 2: "electrical characteristics" added section 2.1: "electrical characteristics (curves)" 11 - apr - 2017 3 updated document title. updated table 4: "static characteristics" , table 6: "igbt switching characteristics (inductive load)" and table 7: "diode switching characteristics (inductive load)" . updated figure 13: "normalized v (br)ces vs. junction temperature " . updated section 4.1: "to - 220 t ype a package information" . minor text changes
STGP30M65DF2 16 / 16 docid027355 rev 3 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2017 stmicroelectronics C all rights reserved

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