irg5k50p5k50pm06e IRG5U200SD12B 1 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 absolute maximum ratings of igbt v ces collector to emitter voltage 1200 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 200 a t c = 25c 320 a i cm pulse collector current t j = 150c 400 a p d maximum power dissipation (igbt) t c = 25c, t j = 150c 1430 w t j maximum igbt junction temperature 150 c t jop maximum operating junction temperature range - 40 to +150 c t stg - 40 to +125 c storage temperature v ces = 1200v i c = 200a at t c = 80c t sc 10sec v ce (on) = 3.20v at i c = 200a single switch igbt with soft recovery diode pow ir 62 ? package features benefits low v ce(on) and switching losses high efficiency in a wide range of applications rbsoa tested rugged transient performance 10sec short circuit safe operating area pow ir 62 ? package industry standard lead free rohs compliant, environmental friendly base part number package type standard pack quantity orderable part number IRG5U200SD12B pow ir 62 ? box 45 IRG5U200SD12B applications ? industrial motor drive ? uninterruptible power supply ? welding and cutting machine ? switched mode power supply ? induction heating downloaded from: http:///
irg5k50p5k50pm06e IRG5U200SD12B 2 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 switching characteristics of igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 460 ns t j = 25c v cc =600v, i c = 200a, r g = 15 ?, v ge =15v, inductive load 440 t j = 125c t r rise time 280 ns t j = 25c 280 t j = 125c t d(off) turn - off delay time 1220 ns t j = 25c 1300 t j = 125c t f fall time 130 ns t j = 25c 160 t j = 125c e on turn - on switching loss 14.4 mj t j = 25c 18.4 t j = 125c e off turn - off switching loss 4.0 mj t j = 25c 7.6 t j = 125c q g total gate charge 2500 nc t j = 25c c ies input capacitance 23.0 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 1.81 c res reverse transfer capacitance 0.72 rbsoa reverse bias safe operating area trapezoid i c = 400a,v cc = 960v, v p =1200v, r g = 4.7?, v ge = +15v to 0v, t j = 150c scsoa short circuit safe operating area 10 s v cc = 600v, v ge = 15v, t j = 150c electrical characteristics of igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector to emitter breakdown voltage 1200 v v ge = 0v, i c = 3ma v ge(th) gate threshold voltage 4.5 5.3 6.0 v i c = 2ma, v ce = v ge v ce(on) collector to emitter saturation voltage 3.20 3.50 v t j = 25c i c = 200a, v ge = 15v 3.80 v t j = 125c i ces collector to emitter leakage current 3 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 400 na v ge = 20v, v ce = 0 r gint internal gate resistance 0.62 downloaded from: http:///
irg5k50p5k50pm06e IRG5U200SD12B 3 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 absolute maximum ratings of freewheeling diode v rrm repetitive peak reverse voltage 1200 v i f diode continuous forward current, t c = 25c 400 a diode continuous forward current, t c = 80c 200 i fm pulse diode current 400 a module characteristics parameter min. typ. max. unit v iso isolation voltage (all terminals shorted), f = 50hz, 1minute 2500 v r jc junction - to - case (igbt) 0.087 c/w r jc junction - to - case (freewheeling diode) 0.217 c/w r cs case - to - sink (conductive grease applied) 0.1 c/w m power terminals screw: m6 3.0 5.0 nm m mounting screw: m6 4.0 6.0 nm g weight 310 g electrical and switching characteristics of freewheeling diode parameter typ. unit test conditions max. v f forward voltage 2.00 v t j = 25c i f = 200a , v ge = 0v 2.70 2.20 t j = 125c i rr peak reverse recovery current 160 a t j = 25c i f 20 0a, di/dt=2400a/ s, v rr = 600v, v ge = - 15v 180 t j = 125c q rr reverse recovery charge 12.4 c t j = 25c 22.4 t j = 125c e rec reverse recovery energy 4.08 mj t j = 25c 8.04 t j = 125c downloaded from: http:///
irg5k50p5k50pm06e IRG5U200SD12B 4 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.2 typical igbt output characteristics fig.3 typical freewheeling diode characteristics fig. 4 typical capacitance characteristics fig.5 typical switching loss vs. collector current fig.6 typical switching loss vs. gate resistance 0 40 80 120 160 200 240 280 320 360 400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v ce (v) i c (a) v ge =15v t j =125c t j =25c 0 40 80 120 160 200 240 280 320 360 400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v ce (v) i c (a) t j =125c v ge =17v v ge =15v v ge =13v v ge =11v v ge =9v 0 40 80 120 160 200 240 280 320 360 400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v f (v) i f (a) v ge =0v t j =125c t j =25c 0 5 10 15 20 25 0 5 10 15 20 25 30 35 40 c (nf) v ce (v) v ge = 0v,f =1 mhz c ies c oes 0 40 80 120 160 200 240 280 320 360 400 0 5 10 15 20 25 30 35 40 e (mj) i c (a) v cc =600v,v ge =+/-15v, rg = 15 ohm,t j =125c e off e on e rec 0 5 10 15 20 25 30 35 40 45 50 10 20 30 40 50 e (mj) rg ( ? ) v cc =600v,v ge =+/-15v, i c =200a,t j =125c e off e on e rec fig.1 typical igbt saturation characteristics downloaded from: http:///
irg5k50p5k50pm06e IRG5U200SD12B 5 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.7 typical load current vs. frequency fig.8 reverse bias safe operation area (rbsoa) fig.9 typical transient thermal impedance (igbt) fig.10 typical transient thermal impedance (diode) square wave: diode as specified v cc i 0 40 80 120 160 200 240 280 320 1 10 100 duty cycle:50% t j =125c t c =80c rg =15 ohm,v ge =15v frequency (khz) load current (a) 0 200 400 600 800 1000 1200 0 100 200 300 400 i c (a) v ces (v) module chip 0.001 0.01 0.1 1 2 0.00 0.02 0.04 0.06 0.08 0.10 z thjc ( k/w ) t ( s ) z thjc :igbt 0.001 0.01 0.1 1 2 0.00 0.05 0.10 0.15 0.20 0.25 z thjc (k/w) t ( s ) z thjc :didoe downloaded from: http:///
irg5k50p5k50pm06e IRG5U200SD12B 6 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 internal circuit: package outline (unit: mm): qualification information ? qualification level industrial moisture sensitivity level not applicable rohs compliant yes ? qualification standards can be found at international rectifie rs web site: http://www.irf.com/product - info/reliability/ ir world headquarters: 101 north sepulveda blvd, el segundo, california, 90245, usa to contact international rectifier, please visit: http://www.irf.com/whoto - call/ downloaded from: http:///
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