mar . 201 6 version 1 . 1 magnachip semiconductor ltd . 1 md ht 4 n 2 5 n - channel mosfet 2 5 0 v absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 2 5 0 v gate - source voltage v gss 30 v continuous drain current t c =25 o c i d 0.8 3 a t c = 10 0 o c 0.5 2 a pulsed drain current ( 1 ) i dm 3. 3 a power dissipation t c =25 o c p d 2. 5 w derate above 25 o c 0.0 2 w/ o c peak diode recovery dv/dt (3) d v/dt 5 .5 v/ns repetitive pulse avalanche energy (4) e ar 0.2 5 mj avalanche current (1) i ar 0.8 3 a sin gle pulse avalanche energy (4 ) e as 52 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 50 o c/w *when mounted on the minimum pad size recommended (pcb mount) g md ht 4 n 2 5 n - channel mosfet 2 5 0 v, 0.83 a, 1.75 ? general description the md ht 4 n 2 5 uses advanced magnachip s mosfet technology, which provide s low on - state resistance , high switching performance and excellent quality . md ht 4 n 2 5 is suitable device for smps , hid and general purpose applications. features ? v ds = 2 5 0 v ? i d = 0.83 a ? r ds(on) 1. 75 @v gs = 10v applications ? power supply ? pfc ? led tv s d d sot - 223
mar . 201 6 version 1 . 1 magnachip semiconductor ltd . 2 md ht 4 n 2 5 n - channel mosfet 2 5 0 v ordering information part number temp. range package packing rohs status md ht 4 n 2 5 u rh - 55~150 o c sot - 223 reel and tape halogen free electrical characteristics (ta =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 250 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250a 3.0 - 5.0 drain cut - off current i dss v ds = 2 5 0 v, v gs = 0v - - 1 a gate leakage current i gss v gs = 3 0 v, v ds = 0v - - 1 00 n a drain - source on resistance r ds(on) v gs = 10v, i d = 0. 4 1 5a 1.38 1.75 forward transconductance g fs v ds = 30 v, i d = 0.4 1 5 a - 0.91 - s dynamic characteristics total gate charge q g v ds = 200v, i d = 3.6a, v gs = 10v - 4.2 - nc gate - source charge q gs - 1.35 - gate - drain charge q gd - 1.95 - input capacitance c iss v ds = 25v, v gs = 0v, f = 1.0mhz - 146 - pf reverse transfer capacitance c rss - 3 - output capacitance c oss - 32 - turn - on delay time t d(on) v gs = 5v, v ds = 125v, i d = 3.6a, r g = 25 - 8 - ns rise time t r - 21 - turn - off delay time t d(off) - 5 - fall time t f - 16 - drain - source body diode characteristics maximum continuous drain to source diode forward current i s - 0.83 - a source - drain diode forward voltage v sd i s = 0.8 3 a, v gs = 0v - - 1. 5 v body diode reverse recovery time t rr i f = 3.6a, dl/dt = 100a/s (3) - 110 - ns body diode reverse recovery charge q rr - 0.34 - c note : 1. pulse width is based on r jc & r ja and the maximum allowed junction temperature of 150c. 2. pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature t j(max) =150c. 3. i sd 3.6 a, di/dt 3 00a/us, v dd bvdss , r g =25, starting t j =25c 4. l= 1 20 mh, i as = 0.8 3 a, v dd =50v, r g =25, starting t j =25c
mar . 201 6 version 1 . 1 magnachip semiconductor ltd . 3 md ht 4 n 2 5 n - channel mosfet 2 5 0 v fig. 5 transfer characteristics fig.1 on - region characteristics fig. 2 on - resistance variation with drain current and gate voltage fig. 3 on - resistance variation with temperature fig. 4 breakdown voltage variation vs. temperature fig. 6 body diode forward voltage variation with source current and temperature 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 1 2 3 4 5 6 notes 1. 250 ? 2. t c =25 v gs =5.5v =6.0v =6.5v =7.0v =8.0v =10v =15v i d ,drain current [a] v ds ,drain-source voltage [v] -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 ? bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 0 1 2 3 4 5 6 7 8 0 1 2 3 4 v gs =20v v gs =10v r ds(on) [? ] i d ,drain current [a] 2 3 4 5 6 7 8 9 10 0.1 1 10 -55 25 150 * notes ; 1. vds=30v i d (a) v gs [v] 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25 150 notes : 1. v gs = 0 v 2.250 ? s pulse test i dr reverse drain current [a] v sd , source-drain voltage [v] -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d =0.415a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
mar . 201 6 version 1 . 1 magnachip semiconductor ltd . 4 md ht 4 n 2 5 n - channel mosfet 2 5 0 v fig. 7 gate charge characteristics fig. 8 capacitance characteristics fig. 9 maximum safe operating area fig. 1 0 transient thermal response curve fig .1 1 single pulse maximum power dissipation fig. 12 maximum drain current v s. case temperature 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10s 1s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r ja =50 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 0 1 2 3 4 5 0 2 4 6 8 10 50v 125v 200v note : i d = 3.6a v gs , gate-source voltage [v] q g , total gate charge [nc] 1e-4 1e-3 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 single pulse r thja = 50 t c = 25 power (w) pulse width (s) 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 i d , drain current [a] t c , case temperature [ ] 1 10 0 200 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
mar . 201 6 version 1 . 1 magnachip semiconductor ltd . 5 md ht 4 n 2 5 n - channel mosfet 2 5 0 v physical dimension sot - 223 d imensions are in millimeters, unless otherwise specified
mar . 201 6 version 1 . 1 magnachip semiconductor ltd . 6 md ht 4 n 2 5 n - channel mosfet 2 5 0 v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not cons ider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
mar . 201 6 version 1 . 1 magnachip semiconductor ltd . 7 md ht 4 n 2 5 n - channel mosfet 2 5 0 v
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