? semiconductor components industries, llc, 2016 may, 2016 ? rev. p0 1 publication order number: ngtb50n65s1w/d NGTB50N65S1WG product preview igbt - inverter welding this insulated gate bipolar transistor (igbt) features a robust and cost effective trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. the igbt is well suited for welding applications. incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage. features ? t jmax = 175 c ? soft fast reverse recovery diode ? optimized for high speed switching ? these are pb?free devices typical applications ? welding absolute maximum ratings rating symbol value unit collector?emitter voltage v ces 650 v collector current @ t c = 25 c @ t c = 100 c i c 140 50 a diode forward current @ t c = 25 c @ t c = 100 c i f 140 50 a diode pulsed current t pulse limited by t j max i fm 140 a pulsed collector current, t pulse limited by t jmax i cm 140 a gate?emitter voltage v ge 20 v v transient gate?emitter voltage (t pulse = 5 s, d < 0.10) 30 power dissipation @ t c = 25 c @ t c = 100 c p d 300 150 w operating junction temperature range t j ?55 to +175 c storage temperature range t stg ?55 to +175 c lead temperature for soldering, 1/8 from case for 5 seconds t sld 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. to?247 case 340al c g 50 a, 650 v v cesat = 2.1 v e off = 0.53 mj e device package shipping ordering information NGTB50N65S1WG t o?247 (pb?free) 30 units / rail www. onsemi.com a = assembly location y = year ww = work week g = pb?free package marking diagram 50n65s1 aywwg g e c
NGTB50N65S1WG www. onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction?to?case, for igbt r jc 0.50 c/w thermal resistance junction?to?case, for diode r jc 1.00 c/w thermal resistance junction?to?ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector?emitter breakdown voltage, gate?emitter short?circuited v ge = 0 v, i c = 500 a v (br)ces 650 ? ? v collector?emitter saturation voltage v ge = 15 v, i c = 50 a v ge = 15 v, i c = 50 a, t j = 175 c v cesat 1.50 ? 2.1 2.8 2.45 ? v gate?emitter threshold voltage v ge = v ce , i c = 350 a v ge(th) 4.5 5.5 6.5 v collector?emitter cut?off current, gate? emitter short?circuited v ge = 0 v, v ce = 650 v v ge = 0 v, v ce = 650 v, t j = 175 c i ces ? ? ? 3.5 0.5 ? ma gate leakage current, collector?emitter short?circuited v ge = 20 v, v ce = 0 v i ges ? ? 100 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 3080 ? pf output capacitance c oes ? 149 ? reverse transfer capacitance c res ? 88 ? gate charge total v ce = 480 v, i c = 50 a, v ge = 15 v q g ? 128 ? nc gate to emitter charge q ge ? 30 ? gate to collector charge q gc ? 69 ? switching characteristic, inductive load turn?on delay time t j = 25 c v cc = 400 v, i c = 50 a r g = 10 v ge = 15 v t d(on) ? 75 ? ns rise time t r ? 46 ? turn?off delay time t d(off) ? 128 ? fall time t f ? 68 ? turn?on switching loss e on ? 1.25 ? mj turn?off switching loss e off ? 0.53 ? total switching loss e ts ? 1.78 ? turn?on delay time t j = 175 c v cc = 400 v, i c = 50 a r g = 10 v ge = 15 v t d(on) ? 70 ? ns rise time t r ? 48 ? turn?off delay time t d(off) ? 135 ? fall time t f ? 93 ? turn?on switching loss e on ? 1.75 ? mj turn?off switching loss e off ? 0.92 ? total switching loss e ts ? 2.67 ? diode characteristic forward voltage v ge = 0 v, i f = 50 a v ge = 0 v, i f = 50 a, t j = 175 c v f 1.50 ? 2.65 2.8 3.25 ? v reverse recovery time t j = 25 c i f = 50 a, v r = 200 v di f /dt = 200 a/ s t rr ? 70 ? ns reverse recovery charge q rr ? 450 ? nc reverse recovery current i rrm ? 11 ? a reverse recovery time t j = 175 c i f = 50 a, v r = 200 v di f /dt = 200 a/ s t rr ? 120 ? ns reverse recovery charge q rr ? 1.27 ? c reverse recovery current i rrm ? 17 ? a product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
NGTB50N65S1WG www. onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 5 4 3 2 1 0 figure 3. output characteristics figure 4. output characteristics i c , collector current (a) v ge = 20 to 15 v t j = 25 c 10 v 9 v 8 v 7 v 5 4 3 2 1 0 i c , collector current (a) v ge = 20 to 17 v t j = 150 c 10 v 9 v 8 v 7 v 11 v 8 7 6 11 v 678 figure 5. typical transfer characteristics figure 6. v ce(sat) vs. t j v ce , collector?emitter voltage (v) 7 5 1 0 0 i c , collector current (a) 23468 t j = ?55 c 13 v 13 v 140 140 120 100 80 60 40 20 0 15 v 120 100 80 60 40 20 0 v ce , collector?emitter voltage (v) 6 5 4 3 2 1 0 140 i c , collector current (a) t j = 175 c 100 120 80 60 40 20 0 78 v ge , gate?emitter voltage (v) 10 4 2 0 i c , collector current (a) 14 12 140 120 100 80 60 40 20 0 68 t j , junction temperature ( c) ?75 v ce , collector?emitter voltage (v) 4.0 ?50 200 150 25 75 3.5 3.0 2.5 2.0 1.5 1.0 ?25 0 50 100 125 175 v ge = 20 to 17 v 10 v 9 v 8 v 7 v 11 v 13 v 15 v 140 120 100 80 60 40 20 v ge = 20 to 15 v 10 v 9 v 7 v and 8 v 11 v 13 v 16 20 18 t j = 25 c t j = 175 c i c = 75 a i c = 50 a i c = 25 a
NGTB50N65S1WG www. onsemi.com 4 typical characteristics figure 7. typical capacitance figure 8. diode forward characteristics v ce , collector?emitter voltage (v) v f , forward voltage (v) 90 80 60 50 40 20 10 0 10 100 1k 3.0 2.5 2.0 1.5 1.0 0.5 0 0 10 30 40 60 70 80 100 figure 9. typical gate charge figure 10. switching loss vs. temperature q g , gate charge (nc) t j , junction temperature ( c) 140 80 60 20 0 0 2 6 8 10 14 16 180 140 120 100 60 40 20 0 0.3 1.1 1.3 1.7 1.9 figure 11. switching time vs. temperature figure 12. switching loss vs. ic t j , junction temperature ( c) i c , collector current (a) 175 150 125 100 50 25 0 1 10 100 1000 80 60 50 40 30 20 10 0 0 4 6 capacitance (pf) i f , forward current (a) v ge , gate?emitter voltage (v) switching loss (mj) switching time (ns) switching loss (mj) 30 70 100 t j = 25 c c oes c ies c res 20 50 90 t j = 25 c t j = 175 c 4 12 v ce = 480 v v ge = 15 v i c = 50 a 80 160 200 v ce = 400 v v ge = 15 v i c = 50 a rg = 10 e off e on v ce = 400 v v ge = 15 v t j = 175 c rg = 10 e off e on 90 3 75 200 v ce = 400 v v ge = 15 v i c = 50 a rg = 10 t d(off) t r t f 3.5 4.0 40 100 120 0.5 10k 1 2 5 0.7 1.5 0.9 18 t d(on) 70
NGTB50N65S1WG www. onsemi.com 5 typical characteristics figure 13. switching time vs. ic figure 14. switching loss vs. r g i c , collector current (a) r g , gate resistor ( ) 80 70 60 50 40 20 30 0 1 10 100 1000 60 50 40 70 30 20 10 5 0 1 2 4 5 6 figure 15. switching time vs. r g figure 16. switching loss vs. v ce r g , gate resistor ( ) v ce , collector?emitter voltage (v) 60 70 50 40 30 20 10 5 10 100 1000 550 500 450 400 300 250 200 150 0 1.0 1.5 2.0 figure 17. switching time vs. v ce v ce , collector?emitter voltage (v) 500 450 400 350 300 250 200 150 10 100 1000 switching time (ns) switching loss (mj) switching time (ns) switching loss (mj) switching time (ns) v ce = 400 v v ge = 15 v t j = 175 c rg = 10 e off e on t d(off) t d(on) t r t f 90 v ce = 400 v v ge = 15 v t j = 175 c i c = 50 a 7 350 600 e off e on v ge = 15 v t j = 175 c i c = 50 a rg = 10 v ce = 400 v v ge = 15 v t j = 175 c i c = 50 a t d(off) t d(on) t r t f v ge = 15 v t j = 175 c i c = 50 a rg = 10 t d(off) t d(on) t r t f 550 2.5 figure 18. safe operating area v ce , collector?emitter voltage (v) 1k 100 10 1 0.1 100 1000 i c , collector current (a) 10k 600 10 1 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature 3.0 0.5 10 65 55 45 35 25 15 3 3.5 65 55 45 35 25 15
NGTB50N65S1WG www. onsemi.com 6 typical characteristics figure 19. reverse bias safe operating area figure 20. t rr vs. di f /dt v ce , collector?emitter voltage (v) di f /dt, diode current slope (a/ s) 1k 100 10 1 1 10 100 1000 900 700 500 300 100 20 40 figure 21. q rr vs. di f /dt figure 22. i rm vs. di f /dt di f /dt, diode current slope (a/ s) di f /dt, diode current slope (a/ s) 900 700 500 300 100 0 900 700 300 100 0 10 25 30 figure 23. v f vs. t j t j , junction temperature ( c) 100 75 50 25 0 ?25 ?50 ?75 1.00 2.00 i c , collector current (a) t rr , reverse recovery time (ns) q rr , reverse recovery charge ( c) i rm , reverse recovery current (a) v f , forward voltage (v) 60 500 150 100 15 200 v ge = 15 v, t c = 175 c t j = 25 c, i f = 50 a t j = 175 c, i f = 50 a t j = 25 c, i f = 50 a t j = 175 c, i f = 50 a t j = 25 c, i f = 50 a t j = 175 c, i f = 50 a 0.6 1.6 1.2 i f = 75 a i f = 50 a i f = 25 a 1.50 125 175 2.50 3.00 v r = 400 v v r = 400 v v r = 400 v 1100 120 160 1100 0.2 1100 2.0 1.0 5 1.25 2.25 1.75 2.75 80 140 20 0.4 0.8 1.4 1.8 3.50 4.00 3.25 3.75
NGTB50N65S1WG www. onsemi.com 7 typical characteristics figure 24. collector current vs. switching frequency 0.01 0.1 1 10 100 1000 frequency (khz) ipk (a) 125 100 75 50 25 0 ramp, t c = 80 c ramp, t c = 110 c square, t c = 80 c square, t c = 110 c 150 figure 25. igbt transient thermal impedance pulse time (sec) r(t), square?wave peak ( c/w) figure 26. diode transient thermal impedance pulse time (sec) 50% duty cycle 20% 10% 5% 2% single pulse 50% duty cycle 20% 10% 5% 2% single pulse 0.0001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 r jc = 0.50 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 r jc = 1.0 junction case c 1 c 2 r 1 r 2 r n duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n c i (j/w) 0.0016 0.0052 0.0197 0.0185 0.0703 3.3617 r i ( c/w) 0.0642 0.0608 0.0507 0.1706 0.1423 0.0094 0.001 r(t), square?wave peak ( c/w) junction case c 1 c 2 r 1 r 2 r n duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n c i (j/w) 0.000065 0.000493 0.001398 0.001975 0.003384 0.005124 r i ( c/w) 0.015502 0.020298 0.022613 0.050622 0.093449 0.195154 0.023709 0.057588 0.125720 2.504837 0.133377 0.173649 0.251534 0.039923 0.01
NGTB50N65S1WG www. onsemi.com 8 figure 27. test circuit for switching characteristics figure 28. definition of turn on waveform
NGTB50N65S1WG www. onsemi.com 9 figure 29. definition of turn off waveform
NGTB50N65S1WG www. onsemi.com 10 package dimensions to?247 case 340al issue a e2 l1 d l b4 b2 b e 0.25 m ba m c a1 a 123 b e 2x 3x 0.635 m ba m a s p seating plane notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. slot required, notch may be rounded. 4. dimensions d and e do not include mold flash. mold flash shall not exceed 0.13 per side. these dimensions are measured at the outermost extreme of the plastic body. 5. lead finish is uncontrolled in the region defined by l1. 6. ? p shall have a maximum draft angle of 1.5 to the top of the part with a maximum diameter of 3.91. 7. dimension a1 to be measured in the region defined by l1. dim min max millimeters d 20.30 21.40 e 15.50 16.25 a 4.70 5.30 b 1.00 1.40 b2 1.65 2.35 e 5.45 bsc a1 2.20 2.60 c 0.40 0.80 l 19.80 20.80 q 5.40 6.20 e2 4.32 5.49 l1 3.50 4.50 p 3.55 3.65 s 6.15 bsc b4 2.60 3.40 note 6 4 note 7 q note 4 note 3 note 5 e2/2 note 4 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ngtb50n65s1w/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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