|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor 2N1470 description excellent safe operating area collector-emitter saturation voltage- : v ce(sat) = 1.0v(max)@ i c = 1.5a collector-emitter sustaining voltage- : v ceo(sus) = 60v(min) applications designed for general purpose amplifier and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 3 a p c collector power dissipation@t c =25 55 w t j junction temperature 200 t stg storage temperature -65~200
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2N1470 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 60 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 60 v v ce (sat) collector-emitter satu ration voltage i c = 1.5a; i b = 0.15a 1.0 v v be (sat) base-emitter satura tion voltage i c = 1.5a; i b = 0.15a 1.5 v v be( on ) base-emitter on voltage i c = 1.5a; v ce = 5v 1.5 v i ceo collector cutoff current v ce = 60v; i b = 0 0.1 ma i cex collector cutoff current v ce = 60v; v be = -1.5v v ce = 60v; v be = -1.5v; t c = 150 0.1 2.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma h fe-1 dc current gain i c = 1a; v ce = 5v 15 h fe-2 dc current gain i c = 3a; v ce = 5v 5 |
Price & Availability of 2N1470 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |