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  inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor 2N1470 description excellent safe operating area collector-emitter saturation voltage- : v ce(sat) = 1.0v(max)@ i c = 1.5a collector-emitter sustaining voltage- : v ceo(sus) = 60v(min) applications designed for general purpose amplifier and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 3 a p c collector power dissipation@t c =25 55 w t j junction temperature 200 t stg storage temperature -65~200
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2N1470 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 60 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 60 v v ce (sat) collector-emitter satu ration voltage i c = 1.5a; i b = 0.15a 1.0 v v be (sat) base-emitter satura tion voltage i c = 1.5a; i b = 0.15a 1.5 v v be( on ) base-emitter on voltage i c = 1.5a; v ce = 5v 1.5 v i ceo collector cutoff current v ce = 60v; i b = 0 0.1 ma i cex collector cutoff current v ce = 60v; v be = -1.5v v ce = 60v; v be = -1.5v; t c = 150 0.1 2.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma h fe-1 dc current gain i c = 1a; v ce = 5v 15 h fe-2 dc current gain i c = 3a; v ce = 5v 5


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