2016. 03. 08 1/8 semiconductor technical data KGF30N135NDH revision no : 1 general description kec field stop trench igbts offer low switching losses, high energyefficiency and high avalanche ruggedness for soft switching applications such as ih(induction heating), microwave oven& etc. features h high speed switching h high ruggedness, temperature stable behavior h soft current turn-off waveforms h extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature g ce characteristic symbol rating unit collector-emitter voltage v ces 1350 v gate-emitter voltage v ges ? 20 v collector current @tc=25 ? i c 60 a @tc=100 ? 30 a pulsed collector current i cm * 90 a diode continuous forward current @tc=100 ? i f 30 a diode maximum forward current i fm 90 a maximum power dissipation @tc=25 ? p d 278 w @tc=100 ? 111 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r t h jc 0.45 ? /w thermal resistance, junction to case (diode) r t h jc 2.0 ? /w thermal resistance, junction to ambient r thja 40 ? /w thermal characteristic e c g downloaded from: http:///
2016. 03. 08 2/8 KGF30N135NDH revision no : 1 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =1ma 1350 - - v collector cut-off current i ces v ge =0v, v ce =1350v - - 1.0 ma gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =30ma 5.0 6.0 7.5 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =30a - 1.8 2.2 v v ge =15v, i c =30a, t c = 125 ? - 1.95 - v v ge =15v, i c =60a - 2.2 - v dynamic total gate charge q g v cc =600v, v ge =15v, i c = 30a - 400 - nc gate-emitter charge q ge - 45 - nc gate-collector charge q gc - 220 - nc turn-on delay time t d(on) v cc =600v, i c =30a, v ge =15v,r g =10 ? inductive load, t c = 25 ? - 75 - ns rise time t r - 25 - ns turn-off delay time t d(off) - 475 - ns fall time t f - 165 - ns turn-on switching loss e on - 4.1 - mj turn-off switching loss e off - 2.1 - mj total switching loss e ts - 6.2 - mj turn-on delay time t d(on) v cc =600v, i c =30a, v ge =15v, r g =10 ? inductive load, t c = 125 ? - 75 - ns rise time t r - 30 - ns turn-off delay time t d(off) - 510 - ns fall time t f - 315 - ns turn-on switching loss e on - 4.1 - mj turn-off switching loss e off - 3.2 - mj total switching loss e ts - 7.3 - mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 5450 - pf ouput capacitance c oes - 120 - pf reverse transfer capacitance c res - 90 - pf marking downloaded from: http:///
2016. 03. 08 3/8 KGF30N135NDH revision no : 1 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 30a t c =25 ? - 2.1 2.6 v t c =125 ? - 2.3 - diode reverse recovery time t rr i f = 30a di/dt = 200a/ s t c =25 ? - 230 300 ns t c =125 ? - 250 - diode peak reverse recovery current i rr t c =25 ? - 31 40 a t c =125 ? - 37 - diode reverse recovery charge q rr t c =25 ? - 3600 4680 nc t c =125 ? - 4700 - downloaded from: http:///
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