2008. 9. 10 1/2 semiconductor technical data PG05DXTET tvs diode for esd protection in portable electronics revision no : 3 protection in portable electronics applications. features 30 watts peak pulse power (tp=8/20 s) transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) small package for use in portable electronics. suitable replacement for multi-layer varistors in esd protection applications. protects one i/o or power line. low clamping voltage. low leakage current. applications cell phone handsets and accessories. microprocessor based equipment. personal digital assistants (pda?s) notebooks, desktops, & servers. portable instrumentation. pagers peripherals. maximum rating (ta=25 ) dim millimeters a a1 b1 c tesv 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 b d h j b1 b d a a1 c c j h 1 2 3 5 4 p p p5 + _ + _ + _ + _ + _ + _ + _ 1. nc 2. common anode 3. (tvs) d1 cathode 4. (tvs) d2 cathode 5. (tvs) d3 cathode electrical characteristics (ta=25 ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 30 w junction temperature t j 150 storage temperature t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakdown voltage v br i t =1ma 6.47 - 7.14 v reverse leakage current i r v rwm =4.3v - - 1 a junction capacitance c j v r =0v, f=1mhz - 12 15 pf marking 123 4 5 1 2 3 4 5 d2 d3 d1 tf type name lot no.
2008 .9. 10 2/2 PG05DXTET revision no : 3 non-repetitive peak pulse power vs. pulse time pulse duration t p ( s) 1 100 10 peak pulse power p p ? p ? (w) 10 100 1k peak pulse power 8/20us average power waveform parameters : tr=8 s e -t td=20 s td=lpp/2 rated power or i pp (%) 0 110 70 50 25 0 power deration curve 75 100 125 150 10 20 30 40 80 90 50 100 60 ambient temperature ta ( c) peak pulse current i pp (%) 0 110 70 10 5 0 time ( s) pulse waveform 15 20 25 30 10 20 30 40 80 90 50 100 60 capacitance c j (pf) 0 2 1 0 reverse voltage v r (v) c j - v r 345 2 4 8 6 10 12
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