BDT62/a/b/ c descriptio n ? d c curren t gai n -h f e = 1000(min) @ l c = -3 a ? collector-emitte r sustainin g voltage - : vceo(sus ) = -60v(min) - BDT62 ; -sov(min) - BDT62a ; ? - 1 oov(min) - BDT62b ; -120v(min) - BDT62 c ? complemen t t o typ e bdt63/a/b/ c application s ? designe d fo r us e i n audio amplifie r outpu t stage s , genera l purpos e amplifie r an d hig h spee d switchin g application s absolut e maximu m ratings(t a =25'c ) symbo l vcb o vce o veb o i c ic m i b p c t , t st g paramete r collector-bas e voltage collector-emitte r voltag e bdt6 2 BDT62 a BDT62 b BDT62 c bdt6 2 BDT62 a BDT62 b BDT62 c emitter-bas e voltag e collecto r current-continuou s collector current-pea k bas e curren t collecto r powe r dissipatio n t c =25" c junctio n temperatur e storag e ttemperatur e rang e valu e -6 0 -8 0 -10 0 -12 0 -6 0 -8 0 -10 0 -12 0 - 5 -1 0 -1 5 -0.2 5 9 0 15 0 -65-15 0 uni t v v v aa a w c ' c therma l characteristic s symbo l rthj- c rthj- c paramete r therma l resistance, junctio n t o cas e therma l resistance , junctio n t o ambient . . - ma x 1.3 9 7 0 uni t c/ w c/ w 2 pi n 1.bas e 2 . collecto r s.a/iitte r to-220 c packag e ** i u i a t i a * k 1 c t ~ - ? b ? - - ? v ? ? rf t 1 > i !.?-; ? - !' l ! [ i \i h c i v 1 - l ' 1 j cu m a b ' i d f 0 h j k l 0 r s u v l d to f ? , ff. . h m m mi n 15.7 0 9.9 0 4.2 0 0.7 0 3.4 0 4.9 8 2.7 0 0.4 4 13.2 0 1.1 0 2.7 0 2.5 0 1.2 9 6.4 5 8.6 6 ma x 15.9 0 10.1 0 4.4 0 0.9 0 3.g o 5.1 8 2.0 0 0.4 0 13.4 0 1.3 0 2.9 0 2.7 0 1.3 1 6.6 5 8.8 6 * s -,,; , *?-* j ^ - qualit y semi-conductor s downloaded from: http:///
silico n pn p darlingto n powe r transistors BDT62/a/b/ c electrica l characteristic s t c =25" c unles s otherwis e specifie d symbo l vibrjce o vce(sat)- 1 vce(sat}- 2 vse(on ) icb o ice d ieb o hpe- 1 hfe- 2 vec f paramete r collector-emitte r breakdow n voltag e bdt6 2 BDT62 a BDT62 b BDT62 c collector-emitte r saturatio n voltag e collector-emitte r saturatio n voltag e base-emitte r o n voltag e collecto r cutof f curren t collecto r cutof f curren t bdt6 2 BDT62 a BDT62 b BDT62 c bdt6 2 BDT62 a BDT62 b BDT62 c emitte r cutof f curren t d c curren t gai n d c curren t gai n c-e diod e forwar d voltag e condition s i _ ori m a - u n | c =-3a ; ! b =-12m a l c = -8a ; i b = -80m a lc = -3a ; v ce = -3 v v cb = -60v ; i e = 0 vcb=-30v ; l e =0;tj=150' c vcb = -80v ; i e = 0 vce=-40v ; l e =0;tj=150" c v cb =-100v;i e = 0 v cb =-50v ; l e =0;tj=150 c v cb =-120v;i e = 0 v cb =-60v;le=0;tj=150' c v ce = -30v ; i b = 0 v ce = -40v ; i b = 0 v ce = -50v ; i b = 0 v ce = -60v ; i b = 0 v eb = -5v ; l c = 0 lc = -3a ; v ce = -3 v lc=-10a ; v ce =-3 v i e = -3 a mi n -6 0 -8 0 -10 0 -12 0 100 0 typ . 20 0 max -2. 0 -2. 5 -2. 5 -0. 2 -2. 0 -0. 2 -2. 0 -0. 2 -2. 0 -0. 2 -2. 0 -0. 5 -0. 5 -0. 5 -0. 5 - 5 -2. 0 uni t v v v v m a m a m a v switchin g time s to n tof f turn-o n tim e turn-of f tim e i -3 a | n < - loo 19m a 0. 5 2. 5 m s m s downloaded from: http:///
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