qs.iie.ij ^zmi-donauckoi ^pioaucti, una. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212 ) 227-600 5 fax : (973 ) 376-896 0 blw8 9 u.h.f . powe r transisto r n-p- n silico n plana r epitaxia l transisto r suitabl e fo r transmittin g application s i n class-a , b o r c i n th e u.h.f . an d v.h.f . rang e fo r a nomina l suppl y voltag e o f 2 8 v . th e transisto r i s resistanc e stabilize d an d i s guarantee d t o withstan d infinit e vsw r a t rate d outpu t power . hig h reliabilit y i s ensure d b y a gol d sandwic h metallization , th e transisto r i s house d i n a 14 " capsta n envelop e wit h a cerami c cap . al l lead s ar e isolate d fro m th e stud . quic k referenc e dat a r.f . performanc e u p t o t n = 2 5 c i n a n unneutralize d common-emitte r class- b circui t mod e o f operatio n c.w . vc e v 2 8 f mh z 47 0 p l w 2 g p d b >1 2 fl % >5 0 mechanica l dat a fig. 1 sot122a . 5, 9 (4x ) (4x ) dimension s i n m m ?0,1 4 j meta l 8-32un c - - 8,5 * t 6,3 6 - - 3. 3 f max"* " 3,2 5 2,80~ * ^ 12. 0 ^ 11, 0 ,ba o ^cerami c torqu e o n nut : min . 0,7 5 n m diamete r o f clearanc e hol e i n heatsink : max . 4, 2 mm . (7, 5 k g cm ) mountin g hol e t o hav e n o burr s a t eithe r end . max . 0,8 5 n m de-burring mus t leav e surfac e flat ; d o no t chamfe r o r (8, 5 k g cm ) countersin k eithe r en d o f hole . whe n lockin g i s require d a n adhesiv e i s preferre d instea d o f a loc k washer . n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , parameter s limit s an d packag e dimension s withou t notic e informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . howeve r n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y rha t datasheet s ar e curren t befor e placin g orders . qualit v downloaded from: http:///
blw8 9 rating s limitin g value s i n accordanc e wit h th e absolut e maximu m syste m (ie c 134 ) collector-emitte r voltag e {pea k value) ; vs e = 0 ope n bas e emitter-base voltag e (ope n collector ) c o 1 1 acto r curren t d.c . o r averag e (peakvalue);f> 1 mh z tota l powe r dissipatio n (d.c . an d r.f. ) u p t o storag e temperatur e operatin g junctio n temperatur e jl " c (a ) 1 0, 5 t mb 5 0 10 0 fig . 3 powe r deratin g curv e vs . temperature . therma l resistanc e (dissipatio n = 3, 5 w ; t m b = 7 2 c , i.e . t h = 7 0 c ) fro m junctio n t o mountin g bas e (d.c . an d r.f . dissipation ) rt h j-m b fro m mountin g bas e t o heatsin k rt h mb- h 13, 0 k/ w 0, 6 k/ w downloaded from: http:///
blw8 9 characteristic s t j = 2 5 c collector-emitte r breakdow n voltag e v b e = 0 ; \c - 2 m a collector-emitte r breakdow n voltag e ope n base ; i q = 1 0 m a emitter-bas e breakdow n voltag e ope n collector ; i e - 1 m a collecto r cut-of f curren t v b e = 0;v c e = 30 v secon d breakdow n energy ; l = 2 5 mh ; f = 5 0 h z ope n bas e rb e = 1 0 s i d.c . curren t gai n * i c = 0,1 5 a ; v c e = 5 v collector-emitte r saturatio n voltag e * i c = 0, 5 a ; i b = 0, 1 a transitio n frequenc y a t f = 50 0 mh z * -i e = 0,1 5 a ; v c b = 2 8 v -i e = 0,50a;v c b = 28 v collecto r capacitanc e a t f = 1 mh z 1 mh z v (br)ce s v (br)ce o v (br)eb o 'ce s e sb o esb r h f e v cesa t f t 6 0 v 3 0 v 4 v 1 m a 0, 5 m j 0, 5 m j feedbac k capacitanc e a t f = l c =10ma;v c e = 28 v coliector-stu d capacitanc e typ . 4 0 1 0 t o 10 0 typ . 0, 9 v typ . 1,2 0 gh z typ . 0,8 5 gh z typ . 5, 5 p f typ . 2 p f typ . 1, 2 p f downloaded from: http:///
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